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公开(公告)号：EP1279188B1
公开(公告)日：2006-09-06
申请号：EP01935012.3
申请日：2001-05-02
发明人： WANG, Yun-Yu , JAMMY, Rajarao , KIMBALL, Lee, J. , KOTECKI, David, E. , LIAN, Jenny , LIN, Chenting , MILLER, John, A. , NAGEL, Nicolas , SHEN, Hua , WILDMAN, Horatio, S.
IPC分类号： H01L21/02
摘要： A capacitor structure that comprises a top platinum electrode and a bottom electrode having insulator on the sidewalls of the electrodes, and wherein the bottom electrode is from depositing a first electrode portion being recessed with respect to the insulator on the sidewalls thereof and depositing a second electrode portion is provided.
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公开(公告)号：EP1290729A2
公开(公告)日：2003-03-12
申请号：EP01948396.5
申请日：2001-06-14
IPC分类号： H01L21/768
CPC分类号： H01L21/76849 , H01L21/02074 , H01L21/3212 , H01L21/32134 , H01L21/76861 , H01L21/7687 , H01L27/10855
摘要： A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer (26) employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant (wet etch) including hydrofluoric acid. The diffusion barrier layer (26) is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.
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公开(公告)号：EP1290729B1
公开(公告)日：2012-08-15
申请号：EP01948396.5
申请日：2001-06-14
IPC分类号： H01L21/768
CPC分类号： H01L21/76849 , H01L21/02074 , H01L21/3212 , H01L21/32134 , H01L21/76861 , H01L21/7687 , H01L27/10855
摘要： A method for cleaning an oxidized diffusion barrier layer, in accordance with the present invention, includes providing a conductive diffusion barrier layer (26) employed for preventing oxygen and metal diffusion therethrough and providing a wet chemical etchant (wet etch) including hydrofluoric acid. The diffusion barrier layer (26) is etched with the wet chemical etchant to remove oxides from the diffusion barrier layer such that by employing the wet chemical etchant linear electrical behavior is achieved through the diffusion barrier layer.
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公开(公告)号：EP1668677A1
公开(公告)日：2006-06-14
申请号：EP04775605.1
申请日：2004-09-03
IPC分类号： H01L21/02
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55 , H01L28/65 , H01L28/92
摘要： A device and method for forming a capacitor device comprises forming a substrate, forming a first interlayer dielectric layer on the substrate and forming two or more contact plugs through the substrate. A conducting layer is formed on the first interlayer dielectric layer and an electrode is formed on alternate ones of the contact plugs by etching the conducting layer. The etched electrodes are then coated with a ferroelectric layer. The ferroelectric layer is etched from the surfaces separating the contact plugs and additional electrodes are created by filling the spaces between the electrodes on alternate ones of the contact plugs with a conductive material to establish electrical contact between the plugs and the electrodes.
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公开(公告)号：EP1466350A2
公开(公告)日：2004-10-13
申请号：EP03729432.9
申请日：2003-01-08
发明人： NAGEL, Nicolas , IMAI, Keitaro , BEITEL, Gerhard Adolf, , HILLIGER, Andreas , MOON, Bum-Ki , YAMAKAWA, Koji
IPC分类号： H01L21/02
CPC分类号： H01L27/11502 , H01L21/28568 , H01L27/11507 , H01L28/55 , H01L28/75
摘要： An improved barrier stack (390) for inhibiting diffusion of atoms or molecules, such as O2 is disclosed. The barrier stack is particularly useful in capacitor over plug structures to prevent plug oxidation which can adversely impact the reliability of the structures. The barrier stack includes first and second barrier layers (347, 348) having mismatched grain boundaries. The barrier layers are selected from, for example, Ir, Ru, Pd, Rh, or alloys thereof. By providing mismatched grain boundaries, the interface of the layers block the diffusion path of oxygen. To further enhance the barrier properties, the first barrier layer is passivated with O2 using, for example, a rapid thermal oxidation. The RTO forms a thin oxide layer on the surface of the first barrier layer. The oxide layer can advantageously promote mismatching of the grain boundaries of the first and second barrier layer.
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公开(公告)号：EP1153424A1
公开(公告)日：2001-11-14
申请号：EP99967896.4
申请日：1999-12-22
IPC分类号： H01L21/285
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/55 , H01L28/60
摘要： The invention relates to a microelectronic structure. In said structure, an oxygen-containing iridium layer (25) is embedded between a silicon-containing layer (8, 20) and an oxygen barrier layer (30). Said iridium layer is especially produced by a sputter process in an oxygen atmosphere with a low oxygen content. The oxygen-containing iridium layer (25) is stable at temperatures up to 800 °C and withstands the formation of iridium silicide upon contact with the silicon-containing layer (20). Such microelectronic structures are preferably used in semiconductor memories.
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公开(公告)号：EP1668676A1
公开(公告)日：2006-06-14
申请号：EP04775591.3
申请日：2004-08-31
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115
CPC分类号： H01L27/11502 , H01L27/11507 , H01L28/55
摘要： A vertical capacitor of an FeRAM device is formed by depositing conductive material and etching it to form electrodes, which are located over openings in an insulating layer so that they are electrically connected to lower levels of the structure. A layer of ferroelectric material is formed on the sides of the electrodes, and etched to a desired, uniform thickness. Conductive material is deposited over the ferroelectric material to form a uniform surface onto which another insulating layer can be deposited. Since this process does not include etching of an insulating layer at a time between the formation of the electrodes and the deposition of the ferroelectric material, no fences of insulating material are formed between them. The geometry can be accurately controlled, to give uniform electric fields and reliable operating parameters.
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公开(公告)号：EP1543560A1
公开(公告)日：2005-06-22
申请号：EP03797235.3
申请日：2003-08-12
发明人： BEITEL, Gerhard , HILLIGER, Andreas , MOON, Bum-Ki , NAGEL, Nicolas , TSUCHIYA, Takamichi , YABUKI, Moto
IPC分类号： H01L27/115 , H01L21/8246
CPC分类号： H01L28/75 , H01L21/28568 , H01L28/60 , H01L28/90
摘要： A capacitor over plug (COP) structure is disclosed. The COP avoids the step which is created in conventional COP structures, which adversely impacts the properties of the capacitor. In one embodiment, the step is avoided by providing a plug having upper and lower portions. The upper portion, which is coupled to the bottom electrode of the capacitor, has substantially the same surface area as the bottom electrode. A barrier layer can be provided between the plug and bottom electrode to avoid oxidation of the plug material.
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公开(公告)号：EP1502290A2
公开(公告)日：2005-02-02
申请号：EP03717311.9
申请日：2003-04-17
IPC分类号： H01L21/02 , H01L21/285 , H01L29/92
CPC分类号： H01L28/55 , H01L27/11502
摘要： An improved barrier stack for reducing plug oxidation in capacitor-over-plug structures is disclosed. The barrier stack is formed on a non-conductive adhesion layer of titanium oxide. The barrier stack includes first and second barrier layers wherein the second barrier layer covers the top surface and sidewalls of the first barrier layer. In one embodiment, the first barrier layer comprises Ir and the second barrier layer comprises IrOx. Above the barrier stack is formed a capacitor.
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公开(公告)号：EP1661167A1
公开(公告)日：2006-05-31
申请号：EP04749231.9
申请日：2004-07-13
发明人： HORNIK, Karl , BRUCHHAUS, Rainer , NAGEL, Nicolas
IPC分类号： H01L21/02 , H01L21/8246 , H01L27/115
CPC分类号： H01L28/56 , H01L21/31616 , H01L21/31683
摘要： A process for the fabrication of a ferroelectric capacitor comprising depositing a layer of Ti 5 over an insulating layer 3 of Al 2 O 3 , and oxidising the Ti layer to form a TiO 2 layer 7. Subsequently, a layer of PZT 9 is formed over the TiO 2 layer 7. The PZT layer 9 is subjected to an annealing step in which, due to the presence of the TiO 2 layer 7 it crystallises to form a layer 11 with a high degree of (111)-texture.
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