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    SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS
    3.
    发明公开
    SPIN-TRANSFER TORQUE MEMORY (STTM) DEVICES HAVING MAGNETIC CONTACTS 审中-公开
    自旋转矩存储器（STTM）设备具有磁性接触

    公开(公告)号：EP3167449A1

    公开(公告)日：2017-05-17

    申请号：EP14897086.6

    申请日：2014-07-07

    申请人： Intel Corporation

    发明人： DOYLE, Brian S. ,  OGUZ, Kaan ,  KUO, Charles C. ,  DOCZY, Mark L. ,  SURI, Satyarth ,  KENCKE, David L. ,  CHAU, Robert S. ,  GOLIZADEH MOJARAD, Roksana

    IPC分类号： G11C11/16 ,  H01L43/08

    CPC分类号： H01L43/08 ,  G11C11/161 ,  G11C2213/52 ,  H01L43/12

    摘要： Techniques are disclosed for forming integrated circuit structures including a magnetic tunnel junction (MTJ), such as spin-transfer torque memory (STTM) devices, having magnetic contacts. The techniques include incorporating an additional magnetic layer (e.g., a layer that is similar or identical to that of the magnetic contact layer) such that the additional magnetic layer is coupled antiferromagnetically (or in a substantially antiparallel manner). The additional magnetic layer can help balance the magnetic field of the magnetic contact layer to limit parasitic fringing fields that would otherwise be caused by the magnetic contact layer. The additional magnetic layer may be antiferromagnetically coupled to the magnetic contact layer by, for example, including a nonmagnetic spacer layer between the two magnetic layers, thereby creating a synthetic antiferromagnet (SAF). The techniques can benefit, for example, magnetic contacts having magnetic directions that are substantially in-line or substantially in-plane with the layers of the MTJ stack.

    摘要翻译： 公开了用于形成包括磁性隧道结（MTJ）的集成电路结构的技术，例如具有磁性触点的自旋转移矩存储器（STTM）器件。 该技术包括结合附加磁层（例如，与磁接触层的层相似或相同的层），使得附加磁层反铁磁耦合（或以基本上反平行的方式）。 附加的磁性层可以帮助平衡磁性接触层的磁场，以限制否则将由磁性接触层引起的寄生边缘磁场。 附加的磁性层可以通过例如在两个磁性层之间包括非磁性间隔层来反铁磁性地耦合到磁性接触层，由此产生合成反铁磁体（SAF）。 该技术可以有益于例如磁性接触，该磁性接触具有与MTJ堆叠的层基本上在线或基本上在平面内的磁方向。