公开(公告)号：EP3198651A1

公开(公告)日：2017-08-02

申请号：EP14902484.6

申请日：2014-09-24

申请人： Intel Corporation

发明人： AVCI, Uygar E. ,  RIOS, Rafael ,  KUHN, Kelin J. ,  YOUNG, Ian A. ,  WEBER, Justin R.

IPC分类号： H01L29/78 ,  H01L21/335

CPC分类号： H01L29/785 ,  B82Y10/00 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/068 ,  H01L29/16 ,  H01L29/2003 ,  H01L29/24 ,  H01L29/66795 ,  H01L29/7391

摘要： Described is a TFET comprising: a nanowire having doped regions for forming source and drain regions, and an un-doped region for coupling to a gate region; and a first termination material formed over the nanowire; and a second termination material formed over a section of the nanowire overlapping the gate and source regions. Described is another TFET comprising: a first section of a nanowire having doped regions for forming source and drain regions, and an undoped region for coupling to a gate region; a second section of the nanowire extending orthogonal to the first section, the second section formed next to the gate and source regions; and a termination material formed over the first and second sections of the nanowire.

摘要翻译： 描述了一种TFET，包括：具有用于形成源极和漏极区的掺杂区和用于耦合到栅极区的未掺杂区的纳米线; 以及在纳米线上方形成的第一终止材料; 以及形成在与栅极和源极区重叠的纳米线的一部分之上的第二终止材料。 描述另一种TFET，包括：纳米线的第一部分，其具有用于形成源极和漏极区的掺杂区和用于耦合到栅极区的未掺杂区; 所述纳米线的第二部分正交于所述第一部分延伸，所述第二部分紧邻所述栅极和源极区形成; 以及在纳米线的第一和第二部分上形成的终端材料。

公开(公告)号：EP3198650A1

公开(公告)日：2017-08-02

申请号：EP14902459.8

申请日：2014-09-26

申请人： Intel Corporation

发明人： RIOS, Rafael ,  KUHN, Kelin J. ,  KIM, Seiyon ,  WEBER, Justin R.

IPC分类号： H01L29/78 ,  H01L21/335

CPC分类号： H01L29/66439 ,  H01L21/84 ,  H01L27/1203 ,  H01L29/0669 ,  H01L29/0673 ,  H01L29/122 ,  H01L29/16 ,  H01L29/20 ,  H01L29/24 ,  H01L29/42356 ,  H01L29/42364 ,  H01L29/4238 ,  H01L29/42384 ,  H01L29/42392 ,  H01L29/4908 ,  H01L29/66742 ,  H01L29/66969 ,  H01L29/775 ,  H01L29/778 ,  H01L29/78636 ,  H01L29/78681 ,  H01L29/78684 ,  H01L29/78696 ,  H01L49/00

摘要： Embodiments of the invention include metal oxide metal field effect transistors (MOMFETs) and methods of making such devices. In embodiments, the MOMFET device includes a source and a drain with a channel disposed between the source and the drain. According to an embodiment, the channel has at least one confined dimension that produces a quantum confinement effect in the channel. In an embodiment, the MOMFET device also includes a gate electrode that is separated from the channel by a gate dielectric. According to embodiments, the band-gap energy of the channel may be modulated by changing the size of the channel, the material used for the channel, and/or the surface termination applied to the channel. Embodiments also include forming an type device and a P-type device by controlling the work-function of the source and drain relative to the conduction band and valance band energies of the channel.

摘要翻译： 本发明的实施例包括金属氧化物金属场效应晶体管（MOMFET）以及制造这种器件的方法。 在实施例中，MOMFET器件包括具有设置在源极和漏极之间的沟道的源极和漏极。 根据一个实施例，通道具有至少一个限制尺寸，其在通道中产生量子限制效应。 在一个实施例中，MOMFET器件还包括通过栅极电介质与沟道分开的栅电极。 根据实施例，可以通过改变通道的尺寸，用于通道的材料和/或施加到通道的表面终端来调节通道的带隙能量。 实施例还包括通过相对于沟道的导带和价带能量控制源极和漏极的功函数来形成N型器件和P型器件。