公开(公告)号：EP1170802A3

公开(公告)日：2003-09-10

申请号：EP01305503.3

申请日：2001-06-25

申请人： International Business Machines Corporation

发明人： Clevenger, Lawrence Alfred ,  Mandelman, Jack A. ,  Jammy, Rajaro ,  Gluschenkov, Oleg ,  McStay, Irene Lennox ,  Wong, Kwong Hon ,  Faltermeier, Jonathan

IPC分类号： H01L29/49

CPC分类号： H01L21/28044 ,  H01L29/4941

摘要： A gate structure is disclosed for a semiconductor device, and particularly a MOSFET for such applications as CMOS technology. The gate structure entails an electrical insulating layer 14 on a semiconductor substrate 12, over which a polysilicon gate electrode 16 is formed. The gate structure further includes a gate conductor 18 that is electrically connected with the gate electrode through a diffusion barrier layer 20 having semi-insulating properties. The composition and thickness of the diffusion barrier layer are tailored so that the barrier layer is effective to block diffusion and intermixing between the gate conductor and polysilicon gate electrode, yet provides sufficient capacitive coupling and/or current leakage so as not to significantly increase the gate propagation delay of the gate structure.

摘要翻译： 公开了用于半导体器件的栅极结构，特别是用于诸如CMOS技术的应用的MOSFET。 栅极结构需要在半导体衬底12上形成电绝缘层14，在其上形成多晶硅栅电极16。 栅极结构还包括通过具有半绝缘性质的扩散阻挡层20与栅电极电连接的栅极导体18。 调整扩散阻挡层的组成和厚度，使得阻挡层有效地阻挡栅极导体和多晶硅栅电极之间的扩散和混合，但提供足够的电容耦合和/或电流泄漏，从而不会显着增加栅极 门结构的传播延迟。

公开(公告)号：EP0651076B1

公开(公告)日：1999-08-11

申请号：EP94115744.8

申请日：1994-10-06

申请人： International Business Machines Corporation

发明人： Cabral, Cyril, Jr. ,  Clevenger, Lawrence Alfred ,  d'Heurle, Francois Max ,  Harper, James McKell Edwin ,  Mann, Randy William ,  Miles, Glen Lester ,  Rakowski, Donald Walter Douglas

IPC分类号： C30B1/02 ,  C30B1/00 ,  H01L21/285

CPC分类号： C30B1/02 ,  C30B29/10 ,  H01L21/28518 ,  H01L29/665 ,  Y10S148/04 ,  Y10S148/147

摘要： The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10 atoms/cm . The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700 DEG C, and more preferably between about 600-700 DEG C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900 DEG C.

公开(公告)号：EP0704887A2

公开(公告)日：1996-04-03

申请号：EP95110787.9

申请日：1995-07-11

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Cabral, Cyril, Jr. ,  Clevenger, Lawrence Alfred ,  D'Heurle, François Max ,  Hong, Qu-Zhong

IPC分类号： H01L21/321 ,  H01L21/768

CPC分类号： H01L24/10 ,  C23C8/02 ,  C23C26/00 ,  G11B5/255 ,  G11B5/3106 ,  G11B5/3109 ,  G11B5/313 ,  G11B5/78 ,  G11B7/122 ,  H01L21/321 ,  H01L21/76838 ,  H01L23/53204 ,  H01L24/13 ,  H01L2224/056 ,  H01L2224/13 ,  H01L2224/13099 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01011 ,  H01L2924/01012 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/0103 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/0104 ,  H01L2924/01047 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/1305 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/00 ,  H01L2924/00014

摘要： A method for forming thin films and controlling the tensile and compressive stresses and mechanical properties of the thin film. The method includes forming an alloy on a substrate having a solvent metal and a solute. Then annealing the substrate and the alloy in one of an oxidizing, nitriding and carborizing ambient so that the ambient reacts with the solute to form respectively one of an oxide, nitride and carbide precipitates of the solute in the solvent. The solute is selected so that the precipitates formed may be used to control the mechanical properties of the solvent.

摘要翻译： 一种用于形成薄膜和控制所述拉伸和压缩应力和该薄膜的机械特性的方法。 该方法包括在具有溶剂金属和溶质的基材合金的形成。 然后退火的底物和在氧化，氮化的一个的合金和carborizing环境所以做了环境与溶质反应生成的分别的氧化物，氮化物和碳化物一个在溶剂中的溶质的沉淀。 溶质被选择并可以使用所形成的沉淀物，以控制溶剂的机械性能。

公开(公告)号：EP0651076A1

公开(公告)日：1995-05-03

申请号：EP94115744.8

申请日：1994-10-06

申请人： INTERNATIONAL BUSINESS MACHINES CORPORATION

发明人： Cabral, Cyril, Jr. ,  Clevenger, Lawrence Alfred ,  d'Heurle, Francois Max ,  Harper, James McKell Edwin ,  Mann, Randy William ,  Miles, Glen Lester ,  Rakowski, Donald Walter Douglas

IPC分类号： C30B1/02 ,  C30B1/00 ,  H01L21/285

CPC分类号： C30B1/02 ,  C30B29/10 ,  H01L21/28518 ,  H01L29/665 ,  Y10S148/04 ,  Y10S148/147

摘要： The phase transformation temperature of a metal silicide layer formed overlying a silicon layer on a semiconductor wafer is lowered. First, a refractory metal is disposed proximate to the surface of the silicon layer, a precursory metal is deposited in a layer overlying the refractory metal, and the wafer is heated to a temperature sufficient to form the metal silicide from the precursory metal. The precursory metal may be a refractory metal, and is preferably titanium, tungsten, or cobalt. The concentration of the refractory metal at the surface of the silicon layer is preferably less than about 10¹⁷ atoms/cm³. The refractory metal may be Mo, Co, W, Ta, Nb, Ru, or Cr, and more preferably is Mo or Co. The heating step used to form the silicide is performed at a temperature less than about 700°C, and more preferably between about 600-700°C. Optionally, the wafer is annealed following the step of disposing the refractory metal and prior to the step of depositing the precursory metal layer. Preferably, this annealing step is performed at a wafer temperature of at least about 900°C.

摘要翻译： 形成在半导体晶片上的硅层上的金属硅化物层的相变温度降低。 首先，将难熔金属设置在硅层的表面附近，在覆盖难熔金属的层中沉积前体金属，并将晶片加热到足以从前体金属形成金属硅化物的温度。 前体金属可以是难熔金属，优选为钛，钨或钴。 硅层表面的难熔金属的浓度优选小于约10 7原子/ cm 3。 难熔金属可以是Mo，Co，W，Ta，Nb，Ru或Cr，更优选为Mo或Co。用于形成硅化物的加热步骤在低于约700℃的温度下进行， 优选约600-700℃。任选地，在沉积难熔金属的步骤之后，并且在沉积前体金属层的步骤之前，将晶片退火。 优选地，该退火步骤在至少约900℃的晶片温度下进行。

公开(公告)号：EP1170802A2

公开(公告)日：2002-01-09

申请号：EP01305503.3

申请日：2001-06-25

申请人： International Business Machines Corporation

发明人： Clevenger, Lawrence Alfred ,  Mandelman, Jack A. ,  Jammy, Rajaro ,  Gluschenkov, Oleg ,  McStay, Irene Lennox ,  Wong, Kwong Hon ,  Faltermeier, Jonathan

IPC分类号： H01L29/49

CPC分类号： H01L21/28044 ,  H01L29/4941

摘要： A gate structure is disclosed for a semiconductor device, and particularly a MOSFET for such applications as CMOS technology. The gate structure entails an electrical insulating layer 14 on a semiconductor substrate 12, over which a polysilicon gate electrode 16 is formed. The gate structure further includes a gate conductor 18 that is electrically connected with the gate electrode through a diffusion barrier layer 20 having semi-insulating properties. The composition and thickness of the diffusion barrier layer are tailored so that the barrier layer is effective to block diffusion and intermixing between the gate conductor and polysilicon gate electrode, yet provides sufficient capacitive coupling and/or current leakage so as not to significantly increase the gate propagation delay of the gate structure.

公开(公告)号：EP0677868A1

公开(公告)日：1995-10-18

申请号：EP95103863.7

申请日：1995-03-16

申请人： International Business Machines Corporation

发明人： Agnello, Paul David ,  Cabral, Cyril, Jr. ,  Clevenger, Lawrence Alfred ,  Copel, Matthew Warren ,  D'Heurle, Francois Max ,  Hong, Qi-Zhong

IPC分类号： H01L21/285

CPC分类号： H01L21/28518 ,  Y10S438/934

摘要： A method and a device directed to the same, for stabilizing cobalt silicide/single crystal silicon, amorphous silicon, polycrystalline silicon, germanide/crystalline germanium, polycrystalline germanium structures or other semiconductor material structures so that high temperature processing steps (above 750°C) do not degrade the structural quality of the cobalt silicide/silicon structure. The steps of the method include forming a silicide or germanide (68,69,70) by either reacting cobalt with the substrate material and/or the codeposition of the silicide or germanide on a substrate, adding a selective element, either platinum or nitrogen, into the cobalt and forming the silicide germanide by a standard annealing treatment. Alternatively, the cobalt alloy can be formed after the formation of the silicide or germanide respectively. As a result, the upper limit of the annealing temperature at which the silicide or germanide will structurally degrade is increased.

摘要翻译： 一种方法和涉及相同，用于稳定硅化钴/单晶硅，非晶硅，多晶硅，锗化/结晶锗，多晶锗结构或其它半导体材料结构的装置也是如此高温度的处理步骤（高于750℃） 不降低硅化钴/硅结构的结构质量。 该方法的步骤包括形成由与基板材料和/或在衬底上的硅化物或锗化的代码位置要么起反应钴的硅化物或锗化（68,69,70），增加一个选择元件，铂或氮， 成硅化钴并形成由标准退火处理的锗。 可替代地，钴合金，可以在硅化物或锗化后形成分别形成的。 其结果是，将退火温度的上限值，在所述硅化物或锗化要在结构上会劣化增大。