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    SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME, MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLID ELECTROLYTE SWITCHING DEVICE
    4.
    发明公开
    SOLID ELECTROLYTE SWITCHING DEVICE, FPGA USING SAME, MEMORY DEVICE, AND METHOD FOR MANUFACTURING SOLID ELECTROLYTE SWITCHING DEVICE 有权
    固体电解质开关元件，用相同的方法和FPGA和存储设备生产同样

    公开(公告)号：EP1501124A1

    公开(公告)日：2005-01-26

    申请号：EP03719228.3

    申请日：2003-04-25

    申请人： Japan Science and Technology Agency ,  Riken

    发明人： SAKAMOTO, Toshitsugu ,  AONO, Masakazu ,  HASEGAWA, Tsuyoshi ,  NAKAYAMA, Tomonobu ,  SUNAMURA, Hiroshi ,  KAWAURA, Hisao ,  SUGIBAYASHI, Naohiko

    IPC分类号： H01L21/82 ,  H01L27/04 ,  H01L27/10 ,  H03K19/173 ,  G11C17/00

    CPC分类号： G11C13/0011 ,  G11C2213/15 ,  G11C2213/56 ,  G11C2213/79 ,  H01L27/101 ,  H01L45/085 ,  H01L45/1233 ,  H01L45/1266 ,  H01L45/142 ,  H01L45/144 ,  H01L45/1633 ,  H01L2924/0002 ,  H01L2924/00

    摘要： The present invention provides a solid electrolyte switching device, which can maintain an on or off state when the power source is removed, the resistance of which in on the state is low, and which is capable of integration and re-programming, and FPGA and a memory device using the same, and a method of manufacturing the same.
    A solid electrolyte switching device (10, 10', 20, 20') comprises a substrate (11) in which surface is coated with an insulation layer, a first interconnection layer (13) set on said substrate (11), an ion supplying layer (17) set on said first interconnection layer (13), a solid electrolyte layer (16) set on said ion supplying layer (17), an interlevel insulating layer (12) having a via hole set to cover said first interconnection layer (13), said ion supplying layer (17), and said solid electrolyte layer (16), a counter electrode layer (15) set to contact said solid electrolyte layer (16) through the via hole of said interlevel insulating layer (12), and a second interconnection layer (14) set to cover said counter electrode layer (15). The switching device can be provided in which the on state, or the off state can be arbitrarily set by the threshold voltage applied between the ion supplying layer (17) and the counter electrode layer (15), which is non-volatile, and the resistance of which in the on state is low. The switching device of the present invention is also simple and fine in structure, and hence makes it possible to provide smaller switching devices than are currently available. Further, using the switching device of the present invention as the switching device of an FPGA (30) makes it possible to provide re-programmable and fast operation FPGA (30). Using the switching device of the present invention as a memory cell of a memory device makes it possible to provide a non-volatile memory device with high programming and reading speed.

    摘要翻译： 本发明提供的固体电解质开关装置，其可以当电源被移除的打开或关闭状态保持，其中在电阻上的状态为低，并且所有其能够集成和重新编程，并且FPGA和的 使用相同的存储装置，及其制造方法。 的固体电解质开关装置（10，10”，20,20' ）包括一个基片，该表面在绝缘层涂覆有（11），在所述基板设置的第一互连层（13）（11） 上离子供给层（17）设置具有通孔设置为覆盖所述关于所述离子供给层（17）组所述第一互连层（13），固体电解质层（16），在层间绝缘层（12）上 第一互连层（13），所述离子供给层（17）和所述固体电解质层（16），设置通过所述层间绝缘层的通孔以接触穿过所述固体电解质层（16）的对置电极层（15） （12），并设置以覆盖所述电极层（15）的第二互连层（14）。 开关装置可以在其中被设置在接通状态，或关闭状态可以通过离子供给层（17）并且其是非易失性的对置电极层（15），所有和之间施加的阈值电压来任意设置 其中的阻力在上状态为低。 本发明的开关装置结构如此简单，精细，并且使得可以提供更小的。因此开关设备比目前已经上市。 此外，使用本发明的作为一个FPGA（30）的开关设备的开关装置，能够提供可再编程和快速操作的FPGA（30）。 使用本发明的存储器件的存储单元的开关装置使得有可能以高的编程和读出速度提供一个非易失性存储器装置。