公开(公告)号：EP3098335B1

公开(公告)日：2018-12-05

申请号：EP15737807.6

申请日：2015-01-19

申请人： Japan Science and Technology Agency ,  National Institute of Advanced Industrial Science and Technology

发明人： HATANO, Mutsuko ,  IWASAKI, Takayuki ,  MIZUOCHI, Norikazu ,  MAKINO, Toshiharu ,  KATO, Hiromitsu ,  YAMASAKI, Satoshi

IPC分类号： G01N24/10 ,  C30B29/04 ,  G01R33/032 ,  G01R33/24 ,  C09K11/00 ,  H01L27/15 ,  H01L31/105 ,  C30B25/20 ,  G01R33/12 ,  G01R33/00

CPC分类号： G01R33/032 ,  C30B25/02 ,  C30B25/20 ,  C30B29/04 ,  G01N24/10 ,  G01R33/0052 ,  G01R33/0094 ,  G01R33/1284 ,  G01R33/24 ,  G01R33/323

摘要： A diamond crystal according to the present invention has an NV region containing a complex (NV center) of nitrogen substituted with a carbon atom and a vacancy located adjacent to the nitrogen, on a surface or in the vicinity of the surface, wherein the NV region has a donor concentration equal to or higher than the concentration of the NV centers, or a crystal of the NV region is a {111} face or a face having an off-angle that is ±10 degrees or less against the {111} face, and a principal axis of the NV center is a axis that is perpendicular to the {111} face. Such a diamond crystal enables almost 100% of the NV center to be a state (NV - ) of having a negative electric charge, and spin states of the NV - centers to be aligned in one direction.

公开(公告)号：EP3098335A1

公开(公告)日：2016-11-30

申请号：EP15737807.6

申请日：2015-01-19

申请人： Japan Science and Technology Agency ,  National Institute of Advanced Industrial Science and Technology

发明人： HATANO, Mutsuko ,  IWASAKI, Takayuki ,  MIZUOCHI, Norikazu ,  MAKINO, Toshiharu ,  KATO, Hiromitsu ,  YAMASAKI, Satoshi

IPC分类号： C30B29/04 ,  C01B31/06 ,  G01R33/02

CPC分类号： G01R33/032 ,  C30B25/02 ,  C30B25/20 ,  C30B29/04 ,  G01N24/10 ,  G01R33/0052 ,  G01R33/0094 ,  G01R33/1284 ,  G01R33/24 ,  G01R33/323

摘要： A diamond crystal according to the present invention has an NV region containing a complex (NV center) of nitrogen substituted with a carbon atom and a vacancy located adjacent to the nitrogen, on a surface or in the vicinity of the surface, wherein the NV region has a donor concentration equal to or higher than the concentration of the NV centers, or a crystal of the NV region is a {111} face or a face having an off-angle that is ±10 degrees or less against the {111} face, and a principal axis of the NV center is a axis that is perpendicular to the {111} face. Such a diamond crystal enables almost 100% of the NV center to be a state (NV - ) of having a negative electric charge, and spin states of the NV - centers to be aligned in one direction.

摘要翻译： 金刚石晶体雅丁到本发明具有Nv区域含氮substituiertem的复合物（NV中心）与碳原子及相邻的氮空位，在一个表面上或在表面附近，worin的NV区域 具有施主浓度比所述NV中心的浓度，或NV区域的晶体等于或更高的{111}面或具有偏离角的面所做的是±10度或更少的针对{111}面 和NV中心的主轴线是<111>轴垂直于做{111}面。 这样的金刚石晶体启用NV中心的几乎100％是一个状态（NV - ）具有负电荷的，和自旋NV的状态 - 中心在一个方向上对准。

公开(公告)号：EP4357492A1

公开(公告)日：2024-04-24

申请号：EP22824748.2

申请日：2022-05-24

申请人： SHIN-ETSU CHEMICAL CO., LTD. ,  National Institute of Advanced Industrial Science and Technology

发明人： NOGUCHI, Hitoshi ,  MAKINO, Toshiharu ,  OGURA, Masahiko ,  KATO, Hiromitsu

IPC分类号： C30B29/04

CPC分类号： C30B29/04

摘要： The present invention provides a method for manufacturing a diamond substrate, the method being a method for producing a (111) oriented diamond crystal on an underlying substrate by epitaxial growth using hydrogen-diluted methane as a main source gas by a microwave plasma CVD method, a direct current plasma CVD method, a hot-filament CVD method, or an arc discharge plasma jet CVD method, in which a growth rate is less than 3.8 µm / h. Thereby, a diamond crystal applicable to an electronic and magnetic device and a method to produce this crystal are stably provided in which the crystal with the NV axis with [111] orientation and high-density NVC obtained by the CVD method under a predetermined condition is grown on a highly oriented (111) diamond base substrate obtained by the CVD method also under a predetermined condition.

公开(公告)号：EP2056365A1

公开(公告)日：2009-05-06

申请号：EP07792454.6

申请日：2007-08-13

申请人： National Institute of Advanced Industrial Science and Technology

发明人： YAMASAKI, Satoshi ,  MAKINO, Toshiharu ,  OOKUSHI, Hideyo ,  TOKUDA, Norio ,  KATO, Hiromitsu ,  OGURA, Masahiko ,  WATANABE, Hideyuki ,  RI, Sung-Gi ,  TAKEUCHI, Daisuke

IPC分类号： H01L33/00 ,  H01L21/205

CPC分类号： H01L33/34 ,  H01L21/02376 ,  H01L21/02433 ,  H01L21/02527 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L33/38

摘要： Provided is a light emitting device formed of an indirect transition semiconductor configured from a semiconductor material having high exciton binding energy, wherein an active layer of the indirect transition semiconductor or an active region by a pn junction is formed, the light emitting device has an electrode for injecting current into the active layer or the active region, and the internal quantum efficiency is 10% or more.

摘要翻译： 本发明提供一种由具有高激子结合能的半导体材料构成的间接跃迁半导体形成的发光器件，其中形成间接跃迁半导体的有源层或由pn结形成的有源区，该发光器件具有电极 用于将电流注入有源层或有源区，内部量子效率为10％以上。