公开(公告)号：EP2229695A2

公开(公告)日：2010-09-22

申请号：EP08865626.9

申请日：2008-12-12

申请人： Johann Wolfgang Goethe-Universität Frankfurt am Main ,  Universität Siegen

发明人： ÖJEFORS, Erik ,  HARING BOLÍVAR, Peter ,  ROSKOS, Hartmut ,  PFEIFFER, Ullrich

IPC分类号： H01L23/66 ,  G01N21/35 ,  H01L27/06 ,  H01L29/78 ,  H01L31/101 ,  H01Q9/26 ,  H01Q23/00 ,  H03F3/60

CPC分类号： H01L23/66 ,  H01L27/0203 ,  H01L27/088 ,  H01L2223/6677 ,  H01L2924/0002 ,  H01L2924/3011 ,  H01Q1/2283 ,  H01Q9/285 ,  H03F1/22 ,  H03F3/45282 ,  H03F3/601 ,  H03F2200/294 ,  H03F2203/45024 ,  H01L2924/00

摘要： The present invention relates to a device for detecting millimeter waves, having at least one field effect transistor with a source, a drain, a gate, a gate-source contact, a source-drain channel, and a gate-drain contact. Compared to a similar such device, the problem addressed by the present invention, among others, is that of providing a device which enables the provision of a field effect transistor for detecting the power and/or phase of electromagnetic radiation in the Thz frequency range. In order to create such a device, it is suggested according to the invention, that a device be provided which has an antenna structure wherein the field effect transistor is connected to the antenna structure in such a manner that an electromagnetic signal received by the antenna structure in the THz range is fed into the field effect transistor via the gate-source contact, and wherein the field effect transistor and the antenna structure are arranged together on a single substrate.

摘要翻译： 本发明涉及一种用于检测毫米波的装置，其具有至少一个具有源极，漏极，栅极，栅极 - 源极接触，源极 - 漏极沟道和栅极 - 漏极接触的场效应晶体管。 与类似的这种装置相比，本发明所解决的问题尤其在于提供一种能够提供用于检测Thz频率范围内的电磁辐射的功率和/或相位的场效应晶体管的装置。 为了创建这样的装置，根据本发明，提出了一种具有天线结构的装置，其中场效应晶体管以天线结构接收的电磁信号连接到天线结构 在THz范围内经由栅极 - 源极接触馈入场效应晶体管，并且其中场效应晶体管和天线结构一起布置在单个衬底上。