公开(公告)号：EP2721381A4

公开(公告)日：2015-04-22

申请号：EP12800456

申请日：2012-06-12

Applicant: KLA TENCOR CORP

Inventor： JENSEN EARL ,  SUN MEI ,  O'BRIEN KEVIN

IPC: G01J3/02 ,  G02B6/122

CPC classification number: G01J3/0259 ,  G01J1/58 ,  G01J3/0205 ,  G01J3/021 ,  G01J3/0256 ,  G01J3/0262 ,  G01J3/36 ,  G01J2003/1213

Abstract: A sensor apparatus for measuring characteristics of optical radiation has a substrate and a low profile spectrally selective detection system located within the substrate at one or more spatially separated locations. The spectrally selective detection system includes a generally laminar array of wavelength selectors optically coupled to a corresponding array of optical detectors. It is emphasized that this abstract is provided to comply with the rules requiring an abstract that will allow a searcher or other reader to quickly ascertain the subject matter of the technical disclosure. It is submitted with the understanding that it will not be used to interpret or limit the scope or meaning of the claims.

公开(公告)号：EP2707895A4

公开(公告)日：2015-08-12

申请号：EP12782219

申请日：2012-04-09

Applicant: KLA TENCOR CORP

Inventor： VISHAL VAIBHAW ,  SUN MEI

IPC: H01L21/67

CPC classification number: H01L21/67253 ,  H01L21/67115 ,  H01L21/67248 ,  H01L2924/0002 ,  Y10T428/249923 ,  H01L2924/00

公开(公告)号：EP2671246A4

公开(公告)日：2014-11-19

申请号：EP12742613

申请日：2012-01-24

Applicant: KLA TENCOR CORP

Inventor： SUN MEI ,  QULI FARHAT ,  JENSEN EARL ,  ARLEO PAUL ,  VISHAL VAIBHAW

IPC: H01L21/67 ,  G01K17/00

CPC classification number: G01K17/00 ,  H01L21/67248

Abstract: A process condition measuring device (PCMD) may include first and second substrate components. One or more temperature sensors are embedded within each substrate component. The first and second substrate components are sandwiched together such that each temperature sensor in the second substrate component is aligned in tandem with a corresponding temperature sensor located in the first substrate component. Alternatively first and second temperature sensors may be positioned in parallel in the same substrate. Temperature differences may be measured between pairs of corresponding temperature sensors when the PCMD is subjected to process conditions in a workpiece processing tool. Process conditions in the tool may be calculated from the temperature differences.

公开(公告)号：EP3201942A4

公开(公告)日：2018-06-20

申请号：EP15851269

申请日：2015-10-13

Applicant: KLA TENCOR CORP

Inventor： SUN MEI ,  JENSEN EARL ,  O'BRIEN KEVIN

IPC: H01L21/66 ,  G01K11/20

CPC classification number: G01J1/429 ,  G01J1/0204 ,  G01J1/0271 ,  G01J1/0407 ,  G01J1/58 ,  G01J5/04 ,  G01J5/0818 ,  G01J5/10 ,  G01K11/20 ,  H01L21/67248 ,  H01L21/67253 ,  H01L22/10

Abstract: A measurement wafer device for measuring radiation intensity and temperature includes a wafer assembly including one or more cavities. The measurement wafer device further includes a detector assembly. The detector assembly is disposed within the one or more cavities of the wafer assembly. The detector assembly includes one or more light sensors. The detector assembly is further configured to perform a direct or indirect measurement of the intensity of ultraviolet light incident on a surface of the wafer assembly. The detector assembly is further configured to determine a temperature of one or more portions of the wafer assembly based on one or more characteristics of the one or more light sensors.

公开(公告)号：EP2526743A4

公开(公告)日：2015-05-06

申请号：EP11735001

申请日：2011-01-11

Applicant: KLA TENCOR CORP

Inventor： JENSEN EARL ,  SUN MEI

IPC: H05H1/46 ,  C23C14/54 ,  C23C16/52 ,  G01N27/60 ,  G01N27/62 ,  G01R19/00 ,  H01J37/32 ,  H01L21/205

CPC classification number: H01J37/32954 ,  G01R19/0061 ,  H01J37/32 ,  H01J37/32917 ,  H01J37/32935 ,  H01L21/67069 ,  H01L21/67253 ,  H01L22/34

Abstract: A sensing device for measuring a plasma process parameter in a plasma chamber for processing workpieces may include a substrate with one or more sensor embedded in the substrate. The substrate can have a surface made of substantially the same material as workpieces that are plasma processed in the plasma chamber. Each sensor can include a collector portion made of substantially the same material as the substrate surface. The collector portion includes a surface that is level with the surface of the substrate. Sensor electronics are embedded into the substrate and coupled to the collector portion. When the substrate surface is exposed to a plasma one or more signals resulting from the plasma can be measured with the sensor(s).