公开(公告)号：EP1145079A3

公开(公告)日：2002-04-10

申请号：EP00992221.2

申请日：2000-09-13

申请人： Koninklijke Philips Electronics N.V. ,  Philips Semiconductors Inc.

发明人： LEROUX, Pierre

IPC分类号： G03F7/20 ,  G03F9/00

CPC分类号： G03F9/708 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/7084

公开(公告)号：EP1145081A1

公开(公告)日：2001-10-17

申请号：EP00965211.6

申请日：2000-09-20

申请人： Koninklijke Philips Electronics N.V. ,  Philips Semiconductors Inc.

发明人： LEROUX, Pierre

IPC分类号： G03F7/20

CPC分类号： G03F7/70591 ,  G03F7/70633

摘要： A method for determining rotational error portion of total misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a first pattern and an error-free fine alignment target, in the stepper. In another step, the wafer is aligned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the rotational error portion of the total misalignment error is determined by measuring the circumferential misalignment between the first pattern and the second pattern.

公开(公告)号：EP1145079A2

公开(公告)日：2001-10-17

申请号：EP00992221.2

申请日：2000-09-13

申请人： Koninklijke Philips Electronics N.V. ,  Philips Semiconductors Inc.

发明人： LEROUX, Pierre

IPC分类号： G03F1/00

CPC分类号： G03F9/708 ,  G03F7/70633 ,  G03F9/7076 ,  G03F9/7084

摘要： A method for determining wafer misalignment by using a pattern on a fine alignment target. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer (200c) having an alignment target (222). In another step, the wafer is aligned using the alignment target. Next, a pattern (230) is created around the alignment target using an overlay. Then, the misalignment is determined between the alignment target (222) and the pattern (230) created around the alignment target.

公开(公告)号：EP1180251A1

公开(公告)日：2002-02-20

申请号：EP01918374.8

申请日：2001-03-05

申请人： Koninklijke Philips Electronics N.V.

发明人： HUBBARD, Bryan ,  LEROUX, Pierre

IPC分类号： G03F9/00

CPC分类号： G03F9/7092 ,  G03F9/7076

摘要： A method for determining the centroid of a wafer target. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a target set formed therein. Next, a signal is passed over the target set and over a material separating target shapes in the target set. Then a return signal is reflected, and received, from the surface of the target shapes and the material separating them. A location of at least one maxima point of the return signal is identified. Finally, a centroid is determined as the median of the locations of at least one maxima point.

公开(公告)号：EP1654592A2

公开(公告)日：2006-05-10

申请号：EP04744097.9

申请日：2004-07-31

申请人： Koninklijke Philips Electronics N.V.

发明人： ZIGER, David ,  LEROUX, Pierre

IPC分类号： G03F7/20

CPC分类号： G03F7/70941 ,  G03F1/44 ,  G03F1/70 ,  G03F7/70591 ,  G03F7/70616

摘要： In photo-lithography, one may assess the effect of flare due to various exposure tools. In an example embodiment, in a photo-lithography process on a photo resist coated substrate, there is a method (600) for determining the effect of flare on line shortening. The method (600) comprises, at a first die position on the substrate and in a first exposure, printing a first mask (610) that includes a flare pattern (110) corresponding to one corner of the first mask (610), and in a second exposure, printing a second mask (620) that includes another flare pattern corresponding to an opposite corner of the second mask. At a second die position on the substrate, a composite mask pattern (630) based on features of the first mask and the second is printed. The printed patterns (640) are developed and measurements (650) are obtained therefrom. The effect of flare (660) is determined as a function of the measurements.

公开(公告)号：EP1346262A1

公开(公告)日：2003-09-24

申请号：EP01270811.1

申请日：2001-12-13

申请人： Koninklijke Philips Electronics N.V.

发明人： LEROUX, Pierre

IPC分类号： G03F9/00

CPC分类号： G03F9/7084

摘要： A wafer alignment system uses four fine alignment targets (420a, 420b, 430a, 430b) per stepper shot (410). The four alignment targets are disposed within the scribe line (404) on each side of a four-sided stepper shot. The targets on opposite sides of the stepper shot are located in mirror-image positions. This allows compensating for rotational errors.

公开(公告)号：EP1145082A1

公开(公告)日：2001-10-17

申请号：EP00977261.7

申请日：2000-09-26

申请人： Philips Semiconductors Inc.

发明人： LEROUX, Pierre

IPC分类号： G03F7/20

CPC分类号： G03F7/70591 ,  G03F7/70633

摘要： A method for determining translation portion of misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer in the stepper. In another step a first pattern, including an error-free fine alignment target, is created on the wafer. Next, the wafer is realigned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the translational error between the first pattern and the second pattern is measured.

公开(公告)号：EP1145080A1

公开(公告)日：2001-10-17

申请号：EP00959410.2

申请日：2000-08-25

申请人： Philips Semiconductors Inc.

发明人： LEROUX, Pierre

IPC分类号： G03F7/20

CPC分类号： G03F7/70633 ,  G03F7/70975

摘要： A method for determining magnification error portion of total misalignment error in a stepper. In one embodiment, the method comprises a series of steps in a stepper, starting with the step of receiving a wafer, having a first pattern and an error-free fine alignment target, in the stepper. In another step, the wafer is aligned in the stepper using the error-free fine alignment target. Then a second pattern is created on the wafer overlaying said first pattern. In another step, the magnification error portion of the total misalignment error is determined by the radial misalignment between the first pattern and the second pattern.