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公开(公告)号：EP2711996A2
公开(公告)日：2014-03-26
申请号：EP13185571.0
申请日：2013-09-23
申请人： LG Innotek Co., Ltd.
发明人： Lee, Kwang Chil , Park, Joong Seo , Lee, Tae Lim , Choi, Woon Kyung , Kim, Kyoung Hoon , Park, Hae Jin , Yun, Hwan Hui
IPC分类号： H01L33/58
CPC分类号： H01L33/58 , H01L33/20 , H01L33/22 , H01L33/32 , H01L2224/13 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2924/00011 , H01L2224/45099
摘要： Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.
摘要翻译： 公开了一种发光器件，其包括发射波长带为200nm至405nm的光的有源层和设置在有源层上的透光层，透光层具有面向有源层的下部，其中 透光层的侧部和上部中的至少一个具有经表面处理的图案部分。
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公开(公告)号：EP2709172A2
公开(公告)日：2014-03-19
申请号：EP13175026.7
申请日：2013-07-04
申请人： LG Innotek Co., Ltd.
发明人： Park, Hae Jin , Kim, Kyoung Hoon , Kim, Dong Ha , Lee, Kwang Chil , Kim, Jae Hun , Yun, Hwan Hui
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02647 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/54 , H01L33/62 , H01L2224/14 , H01L2224/16245 , H01L2933/0091
摘要： A light emitting device is disclosed. The disclosed light emitting device includes a substrate, a UV light emitting semiconductor structure disposed on the substrate, and an intermediate layer interposed between the UV light emitting semiconductor structure and the substrate. The UV light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including Al x Ga (1-x) N (0 y Ga (1-y) N (0 7 to 10 10 /cm 2 .
摘要翻译： 公开了一种发光器件。 所公开的发光器件包括衬底，设置在衬底上的UV发光半导体结构以及介于UV发光半导体结构和衬底之间的中间层。 UV发光半导体结构包括第一导电型半导体层，第二导电型半导体层和介于第一导电类型半导体层和第二导电型半导体层之间的有源层，其中活性层具有 包括包含Al x Ga（1-x）N（0
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公开(公告)号：EP2711996A3
公开(公告)日：2015-11-18
申请号：EP13185571.0
申请日：2013-09-23
申请人： LG Innotek Co., Ltd.
发明人： Lee, Kwang Chil , Park, Joong Seo , Lee, Tae Lim , Choi, Woon Kyung , Kim, Kyoung Hoon , Park, Hae Jin , Yun, Hwan Hui
IPC分类号： H01L33/20
CPC分类号： H01L33/58 , H01L33/20 , H01L33/22 , H01L33/32 , H01L2224/13 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2924/00011 , H01L2224/45099
摘要： Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.
摘要翻译： 公开了一种发光器件，其包括发射波长带为200nm至405nm的光的有源层和设置在有源层上的透光层，所述透光层具有面向有源层的下部，其中 透光层的侧面和上部中的至少一个具有表面处理图案部分。
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公开(公告)号：EP2709172A3
公开(公告)日：2015-01-07
申请号：EP13175026.7
申请日：2013-07-04
申请人： LG Innotek Co., Ltd.
发明人： Park, Hae Jin , Kim, Kyoung Hoon , Kim, Dong Ha , Lee, Kwang Chil , Kim, Jae Hun , Yun, Hwan Hui
CPC分类号： H01L33/06 , H01L21/0237 , H01L21/0242 , H01L21/02458 , H01L21/02513 , H01L21/0254 , H01L21/02576 , H01L21/02579 , H01L21/0262 , H01L21/02647 , H01L33/0025 , H01L33/007 , H01L33/025 , H01L33/12 , H01L33/20 , H01L33/32 , H01L33/54 , H01L33/62 , H01L2224/14 , H01L2224/16245 , H01L2933/0091
摘要： A light emitting device is disclosed. The disclosed light emitting device includes a substrate, a UV light emitting semiconductor structure disposed on the substrate, and an intermediate layer interposed between the UV light emitting semiconductor structure and the substrate. The UV light emitting semiconductor structure includes a first conductivity-type semiconductor layer, a second conductivity-type semiconductor layer, and an active layer interposed between the first conductivity-type semiconductor layer and the second conductivity-type semiconductor layer, wherein the active layer has a multi quantum well structure including at least one period of a pair structure of a quantum barrier layer including Al x Ga (1-x) N (0 y Ga (1-y) N (0 7 to 10 10 /cm 2 .
摘要翻译： 公开了一种发光器件。 所公开的发光器件包括衬底，设置在衬底上的UV发光半导体结构以及设置在UV发光半导体结构和衬底之间的中间层。 该UV发光半导体结构包括第一导电类型半导体层，第二导电类型半导体层以及插入在第一导电类型半导体层和第二导电类型半导体层之间的有源层，其中有源层具有 包括包含Al x Ga（1-x）N（0
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公开(公告)号：EP2711996B1
公开(公告)日：2018-11-21
申请号：EP13185571.0
申请日：2013-09-23
申请人： LG Innotek Co., Ltd.
发明人： Lee, Kwang Chil , Park, Joong Seo , Lee, Tae Lim , Choi, Woon Kyung , Kim, Kyoung Hoon , Park, Hae Jin , Yun, Hwan Hui
CPC分类号： H01L33/58 , H01L33/20 , H01L33/22 , H01L33/32 , H01L2224/13 , H01L2224/45139 , H01L2224/48091 , H01L2924/00014 , H01L2924/0002 , H01L2924/00 , H01L2924/00011 , H01L2224/45099
摘要： Disclosed is a light emitting device including an active layer emitting light with a wavelength band of 200 nm to 405 nm, and a light-transmitting layer disposed on the active layer, the light-transmitting layer having a lower part facing the active layer, wherein at least one of side and upper parts of the light-transmitting layer has a surface-processed pattern portion.
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