公开(公告)号：EP1625612A2

公开(公告)日：2006-02-15

申请号：EP04733606.0

申请日：2004-05-18

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  FAURIE, Jean-Pierre ,  GIBART, Pierre

IPC分类号： H01L21/20

CPC分类号： H01L21/02505 ,  C30B25/02 ,  C30B25/04 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02576 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01S5/0213 ,  H01S5/3202 ,  H01S5/32341 ,  H01S2301/173 ,  H01S2304/12

摘要： Gallium nitride substrates are grown by epitaxial lateral overgrowth using multiple steps. On a masked substrate having openings areas, selective growth produces first triangular stripes in which most of the threading dislocations are bent at 90°. In a second step, growth conditions are changed to increase the lateral growth rate and produce a flat (0001) surface. At this stage the density of dislocations on the surface is

公开(公告)号：EP1034325B9

公开(公告)日：2006-01-04

申请号：EP98950142.4

申请日：1998-10-15

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  GIBART, Pierre ,  GUILLAUME, Jean-Claude ,  NATAF, Gilles ,  VAILLE, Michel ,  HAFFOUZ, Soufien

IPC分类号： C30B25/02 ,  H01L33/00 ,  C30B29/40

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/32341

摘要： The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so as to induce the deposit of gallium nitride patterns and the anisotropic lateral growth of said patterns, the lateral growth being pursued until the different patterns coalesce. The deposit of the gallium nitride patterns can be carried out ex-situ by dielectric etching or in-situ by treating the substrate for coating it with a dielectric film whereof the thickness is of the order of one angstrom. The invention also concerns the gallium nitride layers obtained by said method.

公开(公告)号：EP1977028A1

公开(公告)日：2008-10-08

申请号：EP06830658.8

申请日：2006-12-15

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  FAURIE, Jean-Pierre ,  GIBART, Pierre

IPC分类号： C30B29/40 ,  C30B25/02 ,  H01L21/20

CPC分类号： C30B29/40 ,  C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647

摘要： High quality free standing GaN is obtained using a new modification of the Epitaxial Lateral Overgrowth technology in which 3D islands or features are created only by tuning the growth parameters. Smoothing these islands (2D growth) is achieved thereafter by setting growth conditions producing enhanced lateral growth. The repetition of 3D-2D growth results in multiple bending of the threading dislocations thus producing thick layers or free standing GaN with threading dislocation density below 106cm-2.

公开(公告)号：EP1034325B1

公开(公告)日：2005-08-31

申请号：EP98950142.4

申请日：1998-10-15

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  GIBART, Pierre ,  GUILLAUME, Jean-Claude ,  NATAF, Gilles ,  VAILLE, Michel ,  HAFFOUZ, Soufien

IPC分类号： C30B25/02 ,  H01L33/00 ,  C30B29/40

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/0237 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02573 ,  H01L21/02579 ,  H01L21/0262 ,  H01L21/02639 ,  H01L21/02647 ,  H01L33/007 ,  H01S5/32341

摘要： The invention concerns a method for producing a gallium nitride (GaN) epitaxial layer characterised in that it consists in depositing on a substrate a dielectric layer acting as a mask and depositing on the masked gallium nitride, by epitaxial deposit, so as to induce the deposit of gallium nitride patterns and the anisotropic lateral growth of said patterns, the lateral growth being pursued until the different patterns coalesce. The deposit of the gallium nitride patterns can be carried out ex-situ by dielectric etching or in-situ by treating the substrate for coating it with a dielectric film whereof the thickness is of the order of one angstrom. The invention also concerns the gallium nitride layers obtained by said method.

公开(公告)号：EP1525340A2

公开(公告)日：2005-04-27

申请号：EP03750838.9

申请日：2003-07-24

申请人： Lumilog

发明人： BEAUMONT, Bernard ,  GIBART, Pierre ,  FAURIE, Jean-Pierre

IPC分类号： C30B25/02

CPC分类号： C30B25/02 ,  C30B29/406 ,  H01L21/02389 ,  H01L21/0242 ,  H01L21/0254 ,  H01L21/02642 ,  H01L33/007

摘要： The invention concerns a method for preparing gallium nitride films by vapour-phase epitaxy with low defect densities. The invention concerns a method for producing a gallium nitride (GaN) film from a substrate by vapour-phase epitaxy deposition of gallium nitride. The invention is characterized in that the gallium nitride deposition comprises at least one step of vapour-phase epitaxial lateral overgrowth, in that at least one of said epitaxial lateral overgrowth steps is preceded by etching openings either in a dielectric mask previously deposited, or directly into the substrate, and in that it consists in introducing a dissymmetry in the environment of dislocations during one of the epitaxial lateral overgrowth steps so as to produce a maximum number of curves in the dislocations, the curved dislocations not emerging at the surface of the resulting gallium nitride layer. The invention also concerns the optoelectronic and electronic components produced from said gallium nitride films..