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公开(公告)号：EP1473781A2
公开(公告)日：2004-11-03
申请号：EP04016420.4
申请日：1995-07-20
发明人： Kidoguchi, Isao , Adachi, Hideto , Ishibashi, Akihiko , Ohnaka, Kiyoshi , Ban, Yuzaburo , Kubo, Minoru
IPC分类号： H01L33/00
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/3086 , H01S5/32341 , H01S5/327
摘要： A semiconductor light-emitting device with a double hetero structure, including: an active layer made of Ga 1-x In x N (0 ≤ x ≤ 0.3) doped with a p-type impurity and an n-type impurity; and first and second cladding layers provided so as to sandwich the active layer.
摘要翻译： 一种具有双异质结构的半导体发光器件，包括：由掺杂有p型杂质和n型杂质的Ga1-xInxN（0≤x≤0.3）制成的有源层; 以及设置为夹住有源层的第一和第二包层。
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公开(公告)号：EP1473781A3
公开(公告)日：2007-02-21
申请号：EP04016420.4
申请日：1995-07-20
发明人： Kidoguchi, Isao , Adachi, Hideto , Ishibashi, Akihiko , Ohnaka, Kiyoshi , Ban, Yuzaburo , Kubo, Minoru
CPC分类号： H01L33/642 , H01L24/14 , H01L24/16 , H01L24/17 , H01L24/81 , H01L33/007 , H01L33/025 , H01L33/32 , H01L33/325 , H01L2224/73204 , H01L2224/83192 , H01L2933/0075 , H01S5/0213 , H01S5/02236 , H01S5/0224 , H01S5/02272 , H01S5/0422 , H01S5/162 , H01S5/2059 , H01S5/2063 , H01S5/2231 , H01S5/305 , H01S5/3063 , H01S5/3086 , H01S5/32341 , H01S5/327
摘要： Method for producing a semiconductor light-emitting device comprising the step of forming a semiconductor structure having a projected portion and a concave portion and mounting the semiconductor structure on a heat sink.
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