摘要:
The present invention relates to a production process and a production apparatus for the optical information recording media 3 comprising a material thin film 1 which exhibits a reversible change of the optical characteristics by the irradiation of an energy beam such as a laser beam 4 from the laser light source 7 on the substrate 2. By having a means to dropping the emission strength instantly to the virtual zero level after having the emission for a specified time (shutoff circuit portion 10) in conducting the initial crystallization process, both a large irradiation power and a short irradiation time can be achieved to reduce the various thermal damages. Since the method does not waste electric energy, the time to complete recharging of the electric energy for the next discharge emission can be shortened. Further, by having a means to maintain a great difference between the applied voltage and the charging voltage (storage circuit 8 and trigger circuit 9), recharging time can be further shortened to facilitate the treatment speed of the initializing process. Further, in the production process of optical information recording materials with single side structure, in particular, by applying an annealing process in combination with a formation process of the resin protection layer or a recording thin fil initialization process, the warp or distortion of media caused by the contraction of the ultraviolet ray curing resin layer or the recording thin film layer can be reduced or corrected to realize an optical information recording medium having excellent servo characteristics. Further, by having at least one of two media to be affixed with a transmissivity of an ultraviolet ray of 3 % or more as a method to comprise an optical information recording medium with double sides structure not liable to have a warp or distortion, an ultraviolet ray curing resin can be used as an adhesive, resulting in simplifing the production process.
摘要:
The present invention relates to a production process and a oduction apparatus for the optical information recording media comprising a material thin film 1 which exhibits a reversible range of the optical characteristics by the irradiation of an hergy beam such as a laser beam 4 from the laser light source 7 in the substrate 2. By having a means to dropping the emission trength instantly to the virtual zero level after having the mission for a specified time (shutoff circuit portion 10) in ponducting the initial crystallization process, both a large radiation power and a short irradiation time can be achieved to reduce the various thermal damages. Since the method does not aste electric energy, the time to complete recharging of the lectric energy for the next discharge emission can be shortened. Further, by having a means to maintain a great difference etween the applied voltage and the charging voltage (storage circuit 8 and trigger circuit 9), recharging time can be further hortened to facilitate the treatment speed of the initializing process. Further, in the production process of optical information recording materials with single side structure, in articular, by applying an annealing process in combination with formation process of the resin protection layer or a recording hin fil initialization process, the warp or distortion of media caused by the contraction of the ultraviolet ray curing resin layer or the recording thin film layer can be reduced or corrected to realize an optical information recording medium having excellent servo characteristics. Further, by having at least one of two media to be affixed with a transmissivity of an ultraviolet ray of 3 % or more as a method to comprise an optical information recording medium with double sides structure not liable to have a warp or distortion, an ultraviolet ray curing resin can be used as an adhesive, resulting in simplifing the production process.
摘要:
An information recording medium having such a recording material layer on a substrate where reversible phase change between electrically or optically detectable states can be caused by electric energy or electromagnetic energy. The recording material forming the recording layer is either a material having a crystal structure including lattice defects in one phase of the reversible phase change or a material having a complex phase composed of a crystal portion including a lattice defect in one phase of the reversible phase change and an amorphous portion. Both portions contain a common element. A part of the lattice defects are filled with an element other than the element constituting the crystal structure. The recording medium having a recording thin film exhibits little variation of the recording and reproduction characteristics even after repetition of recording and reproduction, excellent weatherability, strong resistance against composition variation, and easily controllable characteristics.
摘要:
An optical information recording medium of the present invention includes a lower protective layer (2), a recording layer (3), an upper protective layer (4), an intermediate layer (5) and a reflective layer (6) in this order from the side near the transparent substrate (1). Of the upper protective layer, the intermediate layer and the reflective layer, the heat conductivity of the layer (4) closest to the recording layer is the smallest of the three layers, and heat conductivities of the others of the three layers increase with increasing distance from the recording layer, and the thickness of the recording layer is from 4nm to 16nm.
摘要:
An optical information recording medium of the present invention includes a lower protective layer (2), a recording layer (3), an upper protective layer (4), an intermediate layer (5) and a reflective layer (6) in this order from the side near the transparent substrate (1). Of the upper protective layer, the intermediate layer and the reflective layer, the heat conductivity of the layer (4) closest to the recording layer is the smallest of the three layers, and heat conductivities of the others of the three layers increase with increasing distance from the recording layer, and the thickness of the recording layer is from 4nm to 16nm.