Multi-axis integrated MEMS inertial sensing device on single packaged chip
    1.
    发明公开
    Multi-axis integrated MEMS inertial sensing device on single packaged chip 审中-公开
    智能手机MEMS-Trägheitsmessungsvorrichtungauf Chip mitEinzelgehäuse

    公开(公告)号:EP2759802A2

    公开(公告)日:2014-07-30

    申请号:EP14152747.3

    申请日:2014-01-27

    申请人: MCube, Inc.

    IPC分类号: G01C19/5783 G01P1/02

    摘要: A multi-axis integrated MEMS inertial sensor device. The device can include an integrated 3-axis gyroscope and 3-axis accelerometer on a single chip, creating a 6-axis inertial sensor device. The structure is spatially with efficient use of the design area of the chip by adding the accelerometer device to the center of the gyroscope device. The design architecture can be a rectangular or square shape in geometry, which makes use of the whole chip area and maximizes the sensor size in a defined area. The MEMS is centered in the package, which is beneficial to the sensor's temperature performance. Furthermore, the electrical bonding pads of the integrated multi-axis inertial sensor device can be configured in the four corners of the rectangular chip layout. This configuration guarantees design symmetry and efficient use of the chip area.

    摘要翻译: 多轴集成MEMS惯性传感器装置。 该设备可以在单个芯片上包含一个集成的3轴陀螺仪和3轴加速度计,创建一个6轴惯性传感器设备。 通过将加速度计装置添加到陀螺仪装置的中心,该结构在空间上有效地利用了芯片的设计区域。 设计架构可以是几何形状的矩形或方形形状,这样可以利用整个芯片区域,并在一定的区域内最大化传感器尺寸。 MEMS集中在封装中,这有利于传感器的温度性能。 此外,集成多轴惯性传感器装置的电接合焊盘可以配置在矩形芯片布局的四个角中。 该配置保证了设计的对称性和芯片面积的有效利用。

    Method and structure of an integrated mems inertial sensor device using electrostatic quadrature-cancellation
    4.
    发明公开
    Method and structure of an integrated mems inertial sensor device using electrostatic quadrature-cancellation 审中-公开
    具有静电抑制正交集成MEMS惯性传感器装置的方法和结构

    公开(公告)号:EP2811260A1

    公开(公告)日:2014-12-10

    申请号:EP14171673.8

    申请日:2014-06-09

    申请人: MCube, Inc.

    IPC分类号: G01C19/5719 G01P15/125

    摘要: An integrated MEMS inertial sensor device is described. The device includes a MEMS inertial sensor overlying a CMOS substrate. The MEMS inertial sensor includes a drive frame coupled to the surface region via at least one drive spring, a sense mass coupled to the drive frame via at least a sense spring, and a sense electrode disposed underlying the sense mass. The device also includes at least one pair of quadrature cancellation electrodes disposed within a vicinity of the sense electrode, wherein each pair includes an N-electrode and a P-electrode.

    摘要翻译: 一种集成MEMS惯性传感器装置进行说明。 该装置包括一个MEMS惯性传感器上覆于CMOS衬底。 所述MEMS惯性传感器包括经由至少一个驱动弹簧,经由至少一个感弹簧质量耦合到所述驱动器框架上的意义上,和设置在感测质量块下方的传感电极耦合到所述表面区域上的驱动器框架。 因此,该装置包括至少一对感测电极的附近内设置正交取消电极,worin每一对包括N电极和p电极。