公开(公告)号：EP2241398A4

公开(公告)日：2017-02-15

申请号：EP08869903

申请日：2008-09-29

申请人： MITSUBISHI HEAVY IND MACHINE TOOL CO LTD

发明人： KINOUCHI MASATO ,  GOTO TAKAYUKI ,  TAWARA SATOSHI ,  TSUNO TAKESHI ,  UTSUMI JUN ,  IDE KENSUKE ,  SUZUKI TAKENORI

IPC分类号： B23K20/00 ,  B81C3/00 ,  H01L21/02 ,  H01L21/18 ,  H01L21/67

CPC分类号： B32B37/1009 ,  B23K20/02 ,  B32B37/10 ,  B32B2309/68 ,  H01L21/187 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/67253

摘要： A room temperature bonding machine is provided with an evacuation apparatus, a gas supply apparatus, a pressure gauge, a cleaner apparatus, a pressure controller and a pressing mechanism. The evacuation apparatus evacuates gas from the chamber. The gas supply apparatus supplies introduction gas into the chamber. The pressure gauge measures the pressure in the chamber. The cleaner apparatus cleans first and second substrates in the chamber when said pressure is at a predetermined degree of vacuum. The pressure controller controls both of the evacuation apparatus and the gas supply apparatus so that the pressure is regulated to a target pressure. The pressing mechanism presses and bonds the first and second substrates when the pressure is set to said target pressure.

摘要翻译： 室温粘合机设置有排气装置，气体供给装置，压力计，清洁装置，压力控制器和按压机构。 抽空装置从室抽出气体。 气体供给装置将引入气体供给到室内。 压力表测量室内的压力。 当所述压力处于预定的真空度时，清洁器装置清洗腔室中的第一和第二衬底。 压力控制器控制排气装置和气体供给装置，使得压力被调节到目标压力。 当压力设定为所述目标压力时，按压机构按压并结合第一和​​第二基板。

公开(公告)号：EP2022594A4

公开(公告)日：2017-03-08

申请号：EP07744406

申请日：2007-05-30

申请人： MITSUBISHI HEAVY IND MACHINE TOOL CO LTD ,  NAT INST ADVANCED IND SCIENCE & TECH

发明人： UTSUMI JUN ,  GOTO TAKAYUKI ,  IDE KENSUKE ,  FUNAYAMA MASAHIRO ,  TAKAGI HIDEKI

IPC分类号： B23K20/02 ,  B81C3/00 ,  C23C14/46

CPC分类号： B32B38/0008 ,  B23K20/02 ,  B23K20/22 ,  B32B37/14 ,  B32B2457/00 ,  B81C3/001 ,  B81C2203/032 ,  C23C14/14 ,  C23C14/3414 ,  C23C14/58 ,  Y10T428/31678

摘要： An inter-substrate material layer is formed between a first substrate and a second substrate to generate a bonding strength. A plurality of metal elements are present in the inter-substrate material layer. An interface element existence ratio of the plurality of metal elements is 0.07 or above. A device can be obtained in which substrates difficult to bond (for example, SiO 2 substrates) are bonded at room-temperature to have practical bonding strength.

摘要翻译： 在第一基板和第二基板之间形成基板间材料层，以产生接合强度。 多个金属元素存在于基板间材料层中。 多个金属元素的界面元素存在比为0.07以上。 可以获得在室温下接合难以接合的基板（例如，SiO 2基板）以具有实际的接合强度的装置。

公开(公告)号：EP2927933A4

公开(公告)日：2016-11-02

申请号：EP13858133

申请日：2013-11-26

申请人： MITSUBISHI HEAVY IND MACHINE TOOL CO LTD

发明人： GOTO TAKAYUKI ,  TSUTSUMI KEIICHIRO ,  TSUNO TAKESHI ,  KINOUCHI MASATO ,  IDE KENSUKE

IPC分类号： H01L21/02 ,  B23K15/00 ,  B23K20/00 ,  B23K20/02 ,  B23K20/233 ,  B23K101/40 ,  B32B15/01 ,  B32B37/06 ,  B32B37/18 ,  B32B38/00 ,  B81C1/00 ,  H01L21/20 ,  H01L21/67 ,  H01L21/677 ,  H01L21/762

CPC分类号： H01L21/76251 ,  B23K15/0006 ,  B23K20/00 ,  B23K20/02 ,  B23K20/233 ,  B23K20/2333 ,  B23K20/2336 ,  B23K2201/40 ,  B32B15/01 ,  B32B37/06 ,  B32B37/18 ,  B32B38/0008 ,  B32B2457/14 ,  B81C1/00269 ,  H01L21/2007 ,  H01L21/67092 ,  H01L21/67748

摘要： A room-temperature bonded device has a first substrate having a first surface and a second substrate having a second surface to be bonded to the first surface. In the bonding of the first surface and the second surface, one of the first surface and the second surface contains an inorganic material such as silicon, SiO 2 , GaN and LiTaO 3 . The other of the first surface and the second surface contains an inorganic material such as silicon, SiO 2 , quartz and Au. The inorganic materials of the first surface and the second surface may be same or may be different.

公开(公告)号：EP3240015A4

公开(公告)日：2018-08-01

申请号：EP15872415

申请日：2015-10-07

申请人： MITSUBISHI HEAVY IND MACHINE TOOL CO LTD

发明人： UTSUMI JUN ,  GOTO TAKAYUKI ,  SUZUKI TAKENORI ,  IDE KENSUKE

IPC分类号： H01L21/02 ,  B23K20/00 ,  B23K20/02 ,  B23K20/22 ,  B32B37/14 ,  B81C3/00 ,  H01L21/18 ,  H01L21/20 ,  H01L23/498

CPC分类号： B23K20/02 ,  B23K20/00 ,  B23K20/22 ,  B32B37/14 ,  B81C3/001 ,  H01L21/02 ,  H01L21/187 ,  H01L21/2007 ,  H01L23/49827 ,  H01L23/49833 ,  H01L2224/05572 ,  H01L2224/80895 ,  H01L2924/0002 ,  H01L2924/15787

摘要： Provided is a semiconductor device formed by performing bonding at room temperature with respect to a wafer in which bonded electrodes 23 and 26 and insulating layers 22 and 25 are respectively exposed to front surfaces 17A and 18A, including a bonding interlayer 30 which independently exhibits non-conductivity and exhibits conductivity by being bonded to the bonded electrodes 23 and 26, between the front surfaces 17A and 18A.

公开(公告)号：EP2624280A4

公开(公告)日：2017-03-22

申请号：EP11828615

申请日：2011-07-29

申请人： MITSUBISHI HEAVY IND MACHINE TOOL CO LTD

发明人： TSUNO TAKESHI ,  GOTO TAKAYUKI ,  KINOUCHI MASATO ,  IDE KENSUKE

IPC分类号： H01L21/02 ,  B23K20/00 ,  B32B37/00 ,  H01L21/67

CPC分类号： B32B37/0046 ,  H01L21/67092 ,  H01L21/67109

摘要： A room temperature bonding method of the present invention includes a step of activating two substrates to prepare two activated substrates; a step of bonding the two activated substrates to produce a bonding resultant substrate; a step of performing annealing of the bonding resultant substrate to reduce residual stress of the bonding resultant substrate. According to such a room temperature bonding method, the residual stress of the bonding resultant substrate can be reduced and the quality can be improved.

公开(公告)号：EP3062333A4

公开(公告)日：2016-12-28

申请号：EP14878983

申请日：2014-12-26

申请人： MITSUBISHI HEAVY IND MACHINE TOOL CO LTD

发明人： KINOUCHI MASATO ,  GOTO TAKAYUKI ,  TSUNO TAKESHI ,  IDE KENSUKE ,  SUZUKI TAKENORI

IPC分类号： H01L21/02 ,  B23K20/00 ,  H01L21/68 ,  H01L21/683

CPC分类号： H01L21/68785 ,  B23K20/00 ,  B32B37/0046 ,  B32B2313/00 ,  B32B2315/08 ,  H01L21/67092 ,  H01L21/68

摘要： The normal temperature bonding device is equipped with a bonding chamber, an upper side stage mechanism whereby an upper side wafer is supported in such a way as to be vertically movable inside the bonding chamber, and a lower side stage mechanism whereby a lower side wafer is supported in such a way as to be movable within a horizontal plane inside the bonding chamber. The lower side stage mechanism comprises a carriage having a lower side wafer holding part for holding the lower side wafer, an elastic guide coupled to the carriage and supporting the carriage, a positioning stage for coarsely moving the lower side wafer holding part, a fine movement mechanism for finely moving the lower side wafer holding part, and a carriage support block. The elastic guide supports the carriage in such a manner that the carriage does not come into contact with the carriage support block when no load is being applied from the upper side stage mechanism onto the carriage, and elastically deforms so that the carriage comes into contact with the carriage support block when the upper side stage mechanism brings the upper side wafer into contact with the lower side wafer, thereby applying a vertical load onto the carriage.

摘要翻译： 常温接合装置配备有接合室，上侧台架构，其中上侧晶片以能够在接合室内垂直移动的方式被支撑;以及下侧机构，下侧晶片为 以能够在接合室内的水平面内移动的方式支撑。 下侧机构包括具有用于保持下侧晶片的下侧晶片保持部的滑架，与滑架接合并支撑滑架的弹性引导件，用于粗动地移动下侧晶片保持部的定位台，精细动作 用于精细移动下侧晶片保持部的机构和滑架支撑块。 弹性引导件以这样的方式支撑托架，使得当没有载荷从上侧台架机构施加到托架上时，托架不会与托架支撑块接触，并且弹性变形使得托架与 当上侧台机构使上侧晶片与下侧晶片接触时，滑架支撑块，从而对托架施加垂直载荷。