-
公开(公告)号：EP1159589B1
公开(公告)日：2005-07-13
申请号：EP00902611.3
申请日：2000-01-19
发明人： HAUF, Markus
CPC分类号： G01J5/06 , G01J5/0003 , G01J5/0007 , G01J5/08 , G01J5/0806 , G01J5/0831 , G01J5/0846 , G01J2005/0048
摘要： The invention relates to a device for measuring the temperature of substrates, notably semiconductor wafers. The device comprises at least one radiation sensor for measuring the radiation emitted by the substrate and an element (19) which restricts the field of vision of the radiation sensor and is positioned between the substrate and the radiation sensor. The substrate temperature can be determined correctly and simply, even if the substrate vibrates or is tilting, owing to the fact that the edges (20) of the element extend in a straight line. The invention also relates to a corresponding method.
-
公开(公告)号：EP1297398B1
公开(公告)日：2004-10-13
申请号：EP01960419.8
申请日：2001-06-29
发明人： BLERSCH, Werner , URBAN, Jochen , PAUL, Silke , RUBY, Uwe c/o Mattson Thermal Products GmbH , HAUF, Markus
IPC分类号： G05D23/19
CPC分类号： G05D23/1904 , G05D23/1917
摘要： The invention relates to a method and to a device for thermally treating objects. The aim of the invention is to facilitate a better control of the temperature profile of an object to be thermally treated. To this end, the invention provides a method and a device for thermally treating an object in a heating system, especially for treating semiconductor wafers (2) in a rapid heating system (1). The objects are thermally treated at a predetermined temperature progression and the temperature of the object is controlled via a PID control and a feedforward control that are based on a simulation model of the heating system and the object. Said model consists of individual models of components of the heating system and/or the object. The parameters of at least one of the individual models are monitored during the thermal treatment and the model is adapted to the monitored parameters.
-
公开(公告)号：EP1297398A2
公开(公告)日：2003-04-02
申请号：EP01960419.8
申请日：2001-06-29
发明人： BLERSCH, Werner , URBAN, Jochen , PAUL, Silke , RUBY, Urve , HAUF, Markus
IPC分类号： G05D23/19
CPC分类号： G05D23/1904 , G05D23/1917
摘要： The invention relates to a method and to a device for thermally treating objects. The aim of the invention is to facilitate a better control of the temperature profile of an object to be thermally treated. To this end, the invention provides a method and a device for thermally treating an object in a heating system, especially for treating semiconductor wafers (2) in a rapid heating system (1). The objects are thermally treated at a predetermined temperature progression and the temperature of the object is controlled via a PID control and a feedforward control that are based on a simulation model of the heating system and the object. Said model consists of individual models of components of the heating system and/or the object. The parameters of at least one of the individual models are monitored during the thermal treatment and the model is adapted to the monitored parameters.
-
公开(公告)号：EP1393354A1
公开(公告)日：2004-03-03
申请号：EP02743086.7
申请日：2002-05-23
发明人： HAUF, Markus , STRIEBEL, Christoph
CPC分类号： H01L21/67248 , C23C16/481 , C30B31/12 , C30B33/02 , H01L21/67115 , H01L21/67242 , H05B3/0047 , Y10T29/41
摘要： The object of the invention is to measure temperature using pyrometers, in a simple and economic way, enabling precise temperature measurement, even for low temperatures. The invention presents a device and method for thermally treating substrates, wherein the substrate is exposed to at least a first and at least a second radiation; the predetermined wavelengths of the first radiation are absorbed between the first radiation source and the substrate; a radiation from the substrate is measured in the predetermined wavelength using a radiation detector arranged on the same side as a second radiation source; the second radiation from the second radiation source is modulated and determined.
-
-
-
搜索结果
4 条记录 (耗时 0.008 秒)
