公开(公告)号：EP1005260A2

公开(公告)日：2000-05-31

申请号：EP99309146.1

申请日：1999-11-17

Applicant: MicroCoating Technologies, Inc.

Inventor： Hunt, Andrew Tye ,  Flanagan, John Scott ,  Neuman, George Andrew

IPC: H05K1/16 ,  H01G4/10

CPC classification number: H05K1/162 ,  H01G4/085 ,  H05K3/388 ,  H05K3/467 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2201/09309

Abstract: Thin layer capacitors are formed from a first flexible metal layer, a dielectric layer between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer deposited on the dielectric layer. The first flexible metal layer may either be a metal foil, such as a copper, aluminum, or nickel foil, or a metal layer deposited on a polymeric support sheet. Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.

Abstract translation: 薄层电容器由第一柔性金属层，沉积在其上的约0.03和约2微米之间的电介质层和沉积在电介质层上的第二柔性金属层形成。 第一柔性金属层可以是金属箔，例如铜，铝或镍箔，或者沉积在聚合物支撑片上的金属层。 层的沉积是通过燃烧化学气相沉积或受控气氛化学气相沉积而促进或促进的。

公开(公告)号：EP1005260A3

公开(公告)日：2004-04-07

申请号：EP99309146.1

申请日：1999-11-17

Applicant: MicroCoating Technologies, Inc.

Inventor： Hunt, Andrew Tye ,  Flanagan, John Scott ,  Neuman, George Andrew

IPC: H05K1/16 ,  H01G4/10 ,  H01G4/08 ,  C23C16/453

CPC classification number: H05K1/162 ,  H01G4/085 ,  H05K3/388 ,  H05K3/467 ,  H05K2201/0175 ,  H05K2201/0179 ,  H05K2201/0317 ,  H05K2201/0355 ,  H05K2201/09309

Abstract: Thin layer capacitors are formed from a first flexible metal layer (402,502), a dielectric layer (404,504) between about 0.03 and about 2 microns deposited thereon, and a second flexible metal layer (406,506) deposited on the dielectric layer (404,504). The first flexible metal layer may either be a metal foil (402), such as a copper, aluminum, or nickel foil, or a metal layer (502) deposited on a polymeric support sheet (501). Depositions of the layers is by or is facilitate by combustion chemical vapor deposition or controlled atmosphere chemical vapor deposition.