Abstract:
A flexible electronic substrate (FES) includes a metallic layer, a dielectric nanoceramic layer formed by oxidation of a surface of the metallic layer, and an electrical circuit formed on a surface of the dielectric layer. The FES may be used for supporting a device, for example a flexible display, an OLED, an optoelectronic device, or a rf device. The dielectric nanoceramic layer has a crystalline structure consisting of substantially equiaxed grains having an average grain size of 100 nanometres or less, a thickness of between 1 micrometre and 50 micrometres, a dielectric strength of greater than 20 KV mm−1, and a thermal conductivity of greater than 3 W/mK. The FES has a minimum bend radius of lower than 25 cm.
Abstract:
Connection system (1) for electronic components, the connection system (1) comprising at least one electrically insulating layer (4a', 4a", 4b', 4b") and at least one electrically conductive layer (3a, 6a, 3b, 6b), wherein the connection system (1) further comprises a heat distributing layer (5a, 5b) arranged within the at least one electrically insulating layer (4a', 4a", 4b', 4b"), wherein the at least one heat distributing layer (5a, 5b) is made of thermally conductive, and electrically insulating, matrix-free material.
Abstract:
The capacitor material of the present invention is comprised by laminating a titanium dioxide layer and a titanate compound layer having perovskite crystals.
Abstract:
The invention relates to a metal/ceramic substrate, comprising a multilayer, plate-shaped ceramic material and at least one metallization which is provided on a surface side of the ceramic material and joined to the ceramic material by direct bonding (DCB method) or reactive brazing, wherein the ceramic material comprises at least one inner layer or base layer made of a silicon nitride ceramic, and wherein the surface side of the ceramic material provided with the at least one metallization is formed on an intermediate layer which is applied onto the at least one base layer and made of an oxidic ceramic.
Abstract:
Method of making a dielectric on a metal foil is disclosed, and a method of making a large area capacitor that includes a dielectric on a metal foil obtained from the method is disclosed. A dielectric precursor layer and the base metal foil are prefired at a prefiring temperature in the range of 350 to 650°C in a moist atmosphere that also comprises a reducing gas. The prefired dielectric precursor layer and base metal foil are subsequently fired at a firing temperature in the range of 700 to 1200°C in an atmosphere having an oxygen partial pressure of less than about 10 -6 atmospheres to produce a dielectric. The area of the capacitor made according to the disclosed method may be greater than 10 mm 2 , and subdivided to create a multiple individual capacitor units that may be embedded in printed wiring boards. The dielectric is typically comprised of crystalline barium titanate or crystalline barium strontium titanate.
Abstract:
Bei einem Substrat (10) mit hydrophiler Oberfläche und einer auf der hydrophilen Oberfläche aufgedruckten Struktur (16) aus einem leitfähigen und oder lichtemittierenden organischen Polymer ist die hydrophile Oberfläche von einer auf dem Substrat angeordneten Schicht aus einem oxidkeramischen (12) und/oder metallischen (14) Material gebildet.
Abstract:
The capacitor material of the present invention is comprised by laminating a titanium dioxide layer and a titanate compound layer having perovskite crystals.
Abstract:
The invention relates to an electronic component module with at least one multi-layer ceramic circuit carrier (2, 3) and at least one cooling device comprising at least one cooling body (4). A composite layer (5, 6) is arranged at least in some regions between the ceramic circuit carrier (2, 3) and the cooling device (4). Said composite layer is designed for a reactive connection with the ceramic circuit carrier (2, 3) during a primary process and for connection with the cooling device (4). The invention also relates to a method for the production of said electronic component module.
Abstract:
A method of manufacture of a composite film, and a method of manufacturing an electronic or opto-electronic device, said method comprising the steps of (i) forming a polymeric substrate layer; (ii) stretching the substrate layer in at least one direction; (iii) heat-setting under dimensional restraint at a tension in the range of about 19 to about 75 kg/m of film width, at a temperature above the glass transition temperature of the polymer of the substrate layer but below the melting temperature thereof; (iv) heat-stabilising the film at a temperature above the glass transition temperature of the polymer of the substrate layer but below the melting temperature thereof; (v) applying a planarising coating composition such that the surface of said coated substrate exhibits an Ra value of less than 0.6 nm, and/or an Rq value of less than 0.8 nm; and (vi) providing an inorganic barrier layer of thickness from 2 to 1000nm by high-energy vapour deposition; and optionally (vii) providing the composite film comprising said polymeric substrate layer, said planarising coating layer and said inorganic barrier layer as a substrate in said electronic or opto-electronic device; and said composite film and said electronic or opto-electronic device, per se.