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公开(公告)号：EP3254288B1
公开(公告)日：2019-07-31
申请号：EP16746935.2
申请日：2016-01-11
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2.发明公开
公开(公告)号：EP3254288A1
公开(公告)日：2017-12-13
申请号：EP16746935.2
申请日：2016-01-11
CPC分类号： H01L45/126 , G11C5/12 , G11C11/221 , G11C13/0002 , G11C13/0004 , G11C13/003 , G11C2213/76 , H01L27/2409 , H01L45/04 , H01L45/06 , H01L45/08 , H01L45/1233 , H01L45/146
摘要： An electronic device includes two conductive electrodes. A first current path extends from one of the electrodes to the other and has a dominant thermally activated conduction activation energy of 0.5 eV to 3.0 eV. A second current path extends from the one electrode to the other and is circuit-parallel the first current path. The second current path exhibits a minimum 100-times increase in electrical conductivity for increasing temperature within a temperature range of no more than 50° C. between 300° C. and 800° C. and exhibits a minimum 100-times decrease in electrical conductivity for decreasing temperature within the 50° C. temperature range. Other embodiments are disclosed.
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公开(公告)号：EP1623453A2
公开(公告)日：2006-02-08
申请号：EP04751377.5
申请日：2004-05-04
IPC分类号： H01L21/02
CPC分类号： H01L27/10855 , H01L27/10852 , H01L28/40 , H01L28/57
摘要： The invention includes methods in which metal oxide dielectric materials (50) are deposited over barrier layers (48). The barrier layers can comprise compositions of metal and one or more of carbon, boron and nitrogen, and the metal oxide of the dielectric material can comprise the same metal as the barrier layer. The dielectric material/barrier layer constructions can be incorporated into capacitors. The capacitors can be used in, for example, DRAM cells, which in turn can be used in electronic systems.
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