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    FIELD EFFECT TRANSISTOR
    2.
    发明公开
    FIELD EFFECT TRANSISTOR 审中-公开
    FELDEFFEKTTRANSISTOR

    公开(公告)号：EP1962338A4

    公开(公告)日：2009-07-15

    申请号：EP06834508

    申请日：2006-12-12

    申请人： NEC CORP

    发明人： MATSUNAGA KOUJI ,  OTA KAZUKI ,  OKAMOTO YASUHIRO ,  NAKAYAMA TATSUO ,  WAKEJIMA AKIO ,  ANDO YUJI ,  MIYAMOTO HIRONOBU ,  INOUE TAKASHI ,  MURASE YASUHIRO

    IPC分类号： H01L21/338 ,  H01L21/335 ,  H01L29/06 ,  H01L29/778 ,  H01L29/812

    CPC分类号： H01L29/7787 ,  H01L29/2003 ,  H01L29/66462

    摘要： A semiconductor device (100) is provided with an undoped GaN electron transport layer (105); an AlGaN electron supply layer (106) arranged in contact with the undoped GaN electron transport layer (105); an undoped GaN layer (107) arranged on the AlGaN electron supply layer (106); a source electrode (101) and a drain electrode (103) arranged on the undoped GaN layer (107), being separated from one another; a recessed section (111), which is arranged in a region between the source electrode (101) and the drain electrode (103) and penetrating the undoped GaN layer (107); a gate electrode (102) which is embedded in the recessed section (111) and being brought into contact with the AlGaN electron supply layer (106) at the bottom plane; and a SiN film (108) arranged on the undoped GaN layer (107) in the region between the gate electrode (102) and the drain electrode (103).

    摘要翻译： 半导体器件（100）设置有未掺杂的GaN电子传输层（105）; 与未掺杂的GaN电子传输层（105）接触布置的AlGaN电子供应层（106）; 布置在所述AlGaN电子供给层（106）上的未掺杂的GaN层（107）; 布置在未掺杂的GaN层（107）上的源电极（101）和漏电极（103），彼此分离; 设置在所述源电极与所述漏电极之间的区域并贯穿所述未掺杂的GaN层的凹部; 嵌入凹部（111）内并在底面与AlGaN电子供给层（106）接触的栅电极（102） 以及在栅电极（102）和漏电极（103）之间的区域中布置在未掺杂的GaN层（107）上的SiN膜（108）。