Abstract:
Provided are a ceramic member being a sintered body including at least forsterite and boron nitride as major components, and in which the boron nitride is oriented in one direction, a probe holder formed by using the ceramic member, and a method for manufacturing the ceramic member. In the ceramic member, the index of orientation preference is equal to or lower than 0.07, and the coefficient of thermal expansion at 20 to 300°C in a direction parallel to the direction of orientation is (3 to 5)×10 -6 /°C, or the three-point bending strength based on JIS R 1601 is equal to or higher than 250 MPa.
Abstract:
There is provided a ceramic member which is a sintered body containing enstatite and boron nitride as constituents, in which boron nitride is oriented in a single direction, a probe holder formed using the ceramic member, and a manufacturing method of the ceramic member. In the ceramic member, an index of orientation degree is not less than 0.8. In so doing, it is possible to provide a ceramic member which has a free machining property, a coefficient of thermal expansion which is close to that of silicon, and high strength, and a probe holder which is formed using the ceramic member, and a manufacturing method of the ceramic member.
Abstract:
Provided are a ceramic member being a sintered body including at least forsterite and boron nitride as major components, and in which the boron nitride is oriented in one direction, a probe holder formed by using the ceramic member, and a method for manufacturing the ceramic member. In the ceramic member, the index of orientation preference is equal to or lower than 0.07, and the coefficient of thermal expansion at 20 to 300°C in a direction parallel to the direction of orientation is (3 to 5)×10 -6 /°C, or the three-point bending strength based on JIS R 1601 is equal to or higher than 250 MPa.
Abstract translation:提供一种陶瓷构件,其是至少包含镁橄榄石和氮化硼作为主要成分,并且其中氮化硼沿一个方向取向的烧结体,通过使用该陶瓷构件形成的探针支架,以及陶瓷构件的制造方法 。 在陶瓷构件中,取向偏好指数等于或低于0.07,并且在与取向方向平行的方向上的20〜300℃的热膨胀系数为(3〜5)×10 -6 / 或基于JIS R 1601的三点弯曲强度等于或高于250MPa。
Abstract:
A wiring substrate that allows wiring at a fine pitch and has a coefficient of thermal expansion close to the coefficient of thermal expansion of silicone, and a probe card that includes the wiring substrate are provided. To this end, there are provided a wiring substrate that includes a ceramic substrate having a coefficient of thermal expansion of 3×10 -6 to 5×10 -6 /°C and one or more thin-film wiring sheets stacked on one surface of the ceramic substrate, and a probe head on which a plurality of conductive proves are arranged in accordance with wiring on the thin-film wiring sheet, which holds individual probes while preventing the probes from coming off and allowing both ends of each probe to be exposed, and which is stacked on the wiring substrate while one end of each probe is brought into contact with the thin-film wiring sheet.
Abstract:
To provide an easily manufactured conductive contact holder and a conductive contact unit capable of supporting a high frequency signal and a highly integrated and downsized inspection object, and a method of manufacturing the conductive contact holder. To achieve the object, there is provided a holder substrate made of a conductive material and having an opening for holding a conductive contact for inputting and outputting a signal to and from a circuit structure and a holding member formed by filling the opening with an insulating material, smoothing the surface of the insulating material, and forming a hole through the insulating material for inserting the conductive contact.