公开(公告)号：EP2412016A1

公开(公告)日：2012-02-01

申请号：EP10756493.2

申请日：2010-03-25

申请人： National Semiconductor Corporation

发明人： BULUCEA, Constantin ,  FRENCH, William D. ,  ARCHER, Donald M. ,  YANG, Jeng-Jiun ,  BAHL, Sandeep R. ,  PARKER, D. Courtney

IPC分类号： H01L21/70 ,  H01L29/02 ,  H01L29/10

CPC分类号： H01L29/1083 ,  H01L21/26513 ,  H01L21/2652 ,  H01L21/26586 ,  H01L21/823412 ,  H01L21/823418 ,  H01L21/823807 ,  H01L21/823814 ,  H01L21/823892 ,  H01L27/088 ,  H01L27/0922 ,  H01L29/0653 ,  H01L29/0847 ,  H01L29/1045 ,  H01L29/105 ,  H01L29/518 ,  H01L29/66659 ,  H01L29/7835

摘要： A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.