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1.发明公开STRUCTURE AND FABRICATION OF FIELD-EFFECT TRANSISTOR USING EMPTY WELL IN COMBINATION WITH SOURCE/DRAIN EXTENSIONS OR/AND HALO POCKET 审中-公开建设和生产的场效应晶体管的空空腔与源极/漏极扩展和/或卤素组合BAG
公开(公告)号：EP2412018A1
公开(公告)日：2012-02-01
申请号：EP10756495.7
申请日：2010-03-25
发明人： BULUCEA, Constantin , YANG, Jeng-Jiun , FRENCH, William, D. , BAHL, Sandeep, R. , PARKER, D. Courtney
CPC分类号： H01L29/0847 , H01L21/26513 , H01L21/2652 , H01L21/2658 , H01L21/26586 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/0922 , H01L29/0653 , H01L29/1045 , H01L29/105 , H01L29/1083 , H01L29/518 , H01L29/665 , H01L29/66659 , H01L29/7833 , H01L29/7835
摘要： Insulated-gate field-effect transistors (IGFETs), both symmetric and asymmetric, suitable for a semiconductor fabrication platform that provides IGFETs for analog and digital applications, including mixed-signal applications, utilize empty-well regions in achieving high performance. A relatively small amount of semiconductor well dopant is near the top of each empty well. Each IGFET (100, 102, 112, 114, 124, or 126) has a pair of source/drain zones laterally separated by a channel zone of body material of the empty well (180, 182, 192, 194, 204, or 206). A gate electrode overlies a gate dielectric layer above the channel zone. Each source/drain zone (240, 242, 280, 282, 520, 522, 550, 552, 720, 722, 752, or 752) has a main portion (240M, 242M, 280M, 282M, 520M, 522M, 550M, 552M, 720M, 722M, 752M, or 752M) and a more lightly doped lateral extension (240E, 242E, 280E, 282E, 520E, 522E, 550E, 552E, 720E, 722E, 752E, or 752E). Alternatively or additionally, a more heavily doped pocket portion (250 or 290) of the body material extends along one of the source/drain zones. When present, the pocket portion typically causes the IGFET to be an asymmetric device.
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公开(公告)号：EP2412018B1
公开(公告)日：2019-03-13
申请号：EP10756495.7
申请日：2010-03-25
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3.发明公开STRUCTURE AND FABRICATION OF LIKE-POLARITY FIELD-EFFECT TRANSISTORS HAVING DIFFERENT CONFIGURATIONS OF SOURCE/DRAIN EXTENSIONS, HALO POCKETS, AND GATE DIELECTRIC THICKNESSES 审中-公开构建和产生具有相似和不同极性配置的源极/漏极延伸，HALO袋和不同构造的介电栅极厚度的场效应晶体管的
公开(公告)号：EP2412016A1
公开(公告)日：2012-02-01
申请号：EP10756493.2
申请日：2010-03-25
发明人： BULUCEA, Constantin , FRENCH, William D. , ARCHER, Donald M. , YANG, Jeng-Jiun , BAHL, Sandeep R. , PARKER, D. Courtney
CPC分类号： H01L29/1083 , H01L21/26513 , H01L21/2652 , H01L21/26586 , H01L21/823412 , H01L21/823418 , H01L21/823807 , H01L21/823814 , H01L21/823892 , H01L27/088 , H01L27/0922 , H01L29/0653 , H01L29/0847 , H01L29/1045 , H01L29/105 , H01L29/518 , H01L29/66659 , H01L29/7835
摘要： A group of high-performance like-polarity insulated-gate field-effect transistors (100, 108, 112, 116, 120, and 124 or 102, 110, 114, 118, 122, and 126) have selectably different configurations of lateral source/drain extensions, halo pockets, and gate dielectric thicknesses suitable for a semiconductor fabrication platform that provides a wide variety of transistors for analog and/or digital applications. Each transistor has a pair of source/drain zones, a gate dielectric layer, and a gate electrode. Each source/drain zone includes a main portion and a more lightly doped lateral extension. The lateral extension of one of the source/drain zones of one of the transistors is more heavily doped or/and extends less deeply below the upper semiconductor surface than the lateral extension of one of the source/drain zones of another of the transistors.
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