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1.发明公开DETECTOR, AND DETECTING SYSTEM AND METHOD FOR DIVIDING ENERGY REGIONS INTELLIGENTLY 审中-公开探测器以及用于智能地划分能量区的系统和方法
公开(公告)号：EP3290957A1
公开(公告)日：2018-03-07
申请号：EP17173795.0
申请日：2017-05-31
发明人： ZHANG, Lan , DU, Yingshuai , LI, Bo , WU, Zonggui , LI, Jun , CAO, Xuepeng , HU, Haifan , GU, Jianping , XU, Guangming , LIU, Bicheng
IPC分类号： G01T1/24
摘要： The disclosure provides a detector, and a detecting system and method for dividing energy regions intelligently. The detecting method may comprise: collecting, by a detector, rays transmitted through a detected object and generating a detection signal according to the rays; wherein each column of pixels of the detector comprises one class-A electrode and a plurality of class-B electrodes, and the class-A electrode and the class-B electrodes are arranged sequentially in a moving direction of the detected object, such that the rays transmitted through the detected object firstly enter into the class-A electrode and then into the class-B electrodes; obtaining image data of the detected object based on the detection signal corresponding to the class-A electrode, and estimating a material component of the detected object based on the image data; adjusting one or more thresholds for dividing the energy regions according to the estimated material component; and determining energy regions to which the detection signal corresponding to the class-B electrodes belongs, according to the adjusted one or more thresholds, and calculating a number of signals in each energy region, so as to obtain the image data of the detected object and determine components of the detected object accurately.
摘要翻译： 本发明提供了一种检测器，智能划分能量区的检测系统和方法。 所述检测方法可以包括：通过检测器收集通过检测对象发送的光线并根据所述光线生成检测信号; 其中，所述检测器的每一列像素包括一个A类电极和多个B类电极，并且所述A类电极和所述B类电极顺序地布置在所述被检测物体的移动方向上，使得所述 透过检测物体的光线首先进入A级电极，然后进入B级电极; 基于对应于A类电极的检测信号获得检测到的物体的图像数据，并基于图像数据估计检测到的物体的物质成分; 根据估计的材料成分调整用于划分能量区域的一个或多个阈值; 根据调整后的一个或多个阈值，确定B类电极对应的检测信号所属的能区，并计算每个能区的信号个数，得到检测到的物体的图像数据， 准确地确定被检测物体的成分。
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公开(公告)号：EP3290956B1
公开(公告)日：2020-05-13
申请号：EP17173779.4
申请日：2017-05-31
发明人： ZHANG, Lan , DU, Yingshuai , LI, Bo , WU, Zonggui , LI, Jun , CAO, Xuepeng , HU, Haifan , GU, Jianping , XU, Guangming , LIU, Bicheng
IPC分类号： G01T1/24
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公开(公告)号：EP3846340A1
公开(公告)日：2021-07-07
申请号：EP20212674.4
申请日：2020-12-09
发明人： CHEN, Zhiqiang , LI, Yuanjing , ZHAO, Ziran , HU, Haifan , MA, Xuming , HUANG, Shiwei
摘要： The present disclosure provides a device for mixing or multiplying frequency, including: a metal housing including a box body and a cover buckled together to define a metal cavity; and at least one frequency conversion unit including: a microstrip line located in the metal cavity; and a channel structure including a radio frequency signal input channel, a local oscillator signal input channel and a signal output channel, the radio frequency signal input channel, the local oscillator signal input channel and the signal output channel pass through the metal housing and are coupled to the microstrip line respectively, wherein the signal output channel is led out at an angle with respect to a plane where the microstrip line is located.
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公开(公告)号：EP3291311A1
公开(公告)日：2018-03-07
申请号：EP17188640.1
申请日：2017-08-30
发明人： ZHANG, Lan , DU, Yingshuai , LI, Bo , WU, Zonggui , LI, Jun , CAO, Xuepeng , HU, Haifan , GU, Jianping , XU, Guangming , LIU, Bicheng
IPC分类号： H01L31/0224 , G01T1/24 , H01L31/115
CPC分类号： G01T1/24 , G01T1/241 , H01L31/02005 , H01L31/0224 , H01L31/02966 , H01L31/115 , H01L31/119 , H05K1/0233 , H05K1/028 , H05K1/115 , H05K1/181 , H05K2201/10151 , H05K2201/10287 , H05K2201/10522
摘要： The present disclosure provides a semiconductor detector. The semiconductor detector comprises: a detector crystal including a crystal body (3), an anode and a cathode; a field enhance electrode (1) for applying a voltage to the detector crystal; an insulating material (2) disposed between the field enhanced electrode (1) and a surface of the detector crystal (3). The semiconductor detector further comprises a field enhanced electrode circuit board having a bottom connection layer in contact with the surface of the detector crystal and a top layer opposite to the bottom connection layer, wherein the top layer is connected to a high voltage input terminal of the semiconductor detector, and an insulating material is provided between the bottom connection layer and the detector surface of the detector crystal.
摘要翻译： 本公开提供了一种半导体检测器。 该半导体检测器包括：包括晶体（3），阳极和阴极的检测器晶体; 场增强电极（1），用于向检测器晶体施加电压; 设置在场增强电极（1）与检测器晶体（3）的表面之间的绝缘材料（2）。 所述半导体探测器还包括场增强电极电路板，所述场增强电极电路板具有与所述探测器晶体的表面接触的底部连接层和与所述底部连接层相对的顶层，其中所述顶层连接到所述探测器晶体的高压输入端子 半导体探测器，并且在底部连接层和探测器晶体的探测器表面之间提供绝缘材料。
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公开(公告)号：EP3290956A1
公开(公告)日：2018-03-07
申请号：EP17173779.4
申请日：2017-05-31
发明人： ZHANG, Lan , DU, Yingshuai , LI, Bo , WU, Zonggui , LI, Jun , CAO, Xuepeng , HU, Haifan , GU, Jianping , XU, Guangming , LIU, Bicheng
IPC分类号： G01T1/24
摘要： There is provided a semiconductor detector (100). According to an embodiment, the semiconductor detector may include a semiconductor detection material (101) including a first side (101S-1) and a second side (101S-2) opposite to each other, a cathode (103) disposed on the first side, and an anode (105) disposed on the second side. The anode includes an array of pixel anodes (201) defining detection pixels of the semiconductor detector, and intermediate anodes (203) disposed between adjacent ones of the pixel anodes. According to an embodiment of the present disclosure, it is possible to achieve signal correction to improve the energy resolution and the signal-to-noise ratio of the detector.
摘要翻译： 提供了一种半导体检测器（100）。 根据实施例，半导体检测器可以包括：半导体检测材料（101），其包括彼此相对的第一侧（101S-1）和第二侧（101S-2）;阴极（103），其设置在第一侧 ，以及设置在第二侧上的阳极（105）。 阳极包括限定半导体检测器的检测像素的像素阳极阵列（201）和设置在相邻像素阳极之间的中间阳极（203）。 根据本公开的实施例，可以实现信号校正以改善检测器的能量分辨率和信噪比。
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公开(公告)号：EP3846284A1
公开(公告)日：2021-07-07
申请号：EP20217366.2
申请日：2020-12-28
发明人： ZHAO, Ziran , CHEN, Zhiqiang , LI, Yuanjing , HU, Haifan , MA, Xuming , HUANG, Shiwei
摘要： The present disclosure provides a device for mixing or multiplying frequency, including: a metal housing including a box body and a cover buckled together to define a metal cavity; and at least one frequency conversion unit including a microstrip line located in the metal cavity, and a channel structure including a radio frequency signal input channel, a local oscillator signal input channel and a signal output channel, the radio frequency signal input channel, the local oscillator signal input channel and the signal output channel pass through the metal housing and are coupled to the microstrip line respectively, wherein at least two of a plane where the radio frequency signal input channel is located, a plane where the local oscillator signal input channel is located and a plane where the signal output channel is located are not coplanar.
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公开(公告)号：EP3521783A1
公开(公告)日：2019-08-07
申请号：EP18248030.1
申请日：2018-12-27
发明人： ZHAO, Ziran , HU, Haifan , MA, Xuming , WANG, Yingxin
摘要： The present disclosure provides a terahertz detector. The terahertz detector includes a planar array structure that is constituted by a plurality of pixel units, the plurality of pixel units each comprise N sub pixels and each of the sub pixels comprises no more than one signal trigger configured to transform a terahertz signal to an electrical current pulsing signal, and each of the plurality of pixel units detects a signal that is a sum of the electrical current pulsing signals of the N sub pixels, where N is an integer greater than 1.
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公开(公告)号：EP3518292A1
公开(公告)日：2019-07-31
申请号：EP17878118.3
申请日：2017-09-12
发明人： ZHANG, Lan , HU, Haifan , CAO, Xuepeng , LI, Jun
IPC分类号： H01L31/0352 , H01L31/18
摘要： A photodiode device, a photodiode detector, and methods of fabricating the same are disclosed. According to an embodiment, a method of fabricating a photodiode device may include: growing an epitaxial layer on a first surface of a substrate, wherein the epitaxial layer is first type lightly doped; forming, in the substrate, a first type heavily doped region in contact with the first type lightly doped epitaxial layer; thinning the substrate from a second surface of the substrate opposite to the first surface to expose the first type heavily doped region; patterning the first type heavily doped region from the second surface side of the substrate to form a trench therein, that penetrates through the first type heavily doped region and extends into the epitaxial layer, wherein the patterned first type heavily doped region serves as a first electrode region of the photodiode device; and forming a second type heavily doped region at bottom of the trench, wherein the second type heavily doped region serves as a second electrode region of the photodiode device.
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9.发明公开APPARATUSES FOR PROCESSING SIGNALS FOR A PLURALITY OF ENERGY REGIONS, AND SYSTEMS AND METHODS FOR DETECTING RADIATION OF A PLURALITY OF ENERGY REGIONS 审中-公开用于处理多个能量区域的信号的设备以及用于检测多个能量区域的辐射的系统和方法
公开(公告)号：EP3290960A1
公开(公告)日：2018-03-07
申请号：EP17170614.6
申请日：2017-05-11
发明人： ZHANG, Lan , DU, Yingshuai , LI, Bo , WU, Zonggui , LI, Jun , CAO, Xuepeng , HU, Haifan , GU, Jianping , XU, Guangming , LIU, Bicheng
IPC分类号： G01T1/36
摘要： The present disclosure provides an apparatus for processing signals for a plurality of energy regions, and a system and method for detecting radiation of a plurality of energy regions. The apparatus for processing signals for a plurality of energy regions may comprise: a first processor, configured to receive a signal from a detector and process the received signal to generate a gated signal, wherein a turn-on period of the gated signal represents magnitude of the received signal; and a second processor, configured to receive the gated signal from the first processor, and determine one of the plurality of energy regions to which the received signal belongs according to the turn-on period of the gated signal, so as to count signals within the determined energy region.
摘要翻译： 本公开提供了一种用于处理多个能量区域的信号的装置以及一种用于检测多个能量区域的辐射的系统和方法。 用于处理多个能量区域的信号的装置可以包括：第一处理器，被配置为接收来自检测器的信号并处理所接收的信号以生成门控信号，其中门控信号的导通时段表示门限信号的幅度 接收到的信号; 以及第二处理器，用于接收来自第一处理器的门控信号，并根据门控信号的导通周期确定接收信号所属的多个能区中的一个，以对 确定的能源地区。
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公开(公告)号：EP3290957B1
公开(公告)日：2020-11-11
申请号：EP17173795.0
申请日：2017-05-31
发明人： ZHANG, Lan , DU, Yingshuai , LI, Bo , WU, Zonggui , LI, Jun , CAO, Xuepeng , HU, Haifan , GU, Jianping , XU, Guangming , LIU, Bicheng
IPC分类号： G01T1/24
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