摘要:
In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14) , and bonded to a second set of predetermined area.
摘要:
In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14) , and bonded to a second set of predetermined area.
摘要:
A combined semiconductor apparatus includes a semiconductor substrate having an integrated circuit, a planarized region formed in a surface of the semiconductor substrate, and a semiconductor thin film including at least one semiconductor device and bonded on the planarized region. A surface of the semiconductor thin film, in which the semiconductor device is formed, is disposed on a side of the planarized region. The apparatus may further include a planarized film disposed between the planarized region and the semiconductor thin film.
摘要:
In a method of manufacturing a semiconductor thin film piece device, a plurality of semiconductor thin film pieces (14) are selected from among the semiconductor thin film pieces (14) formed on a first substrate (35), and bonded to a first set of predetermined area on a second substrate (12). Subsequently, a plurality of semiconductor thin film pieces are selected from the remaining semiconductor thin film pieces (14) , and bonded to a second set of predetermined area.
摘要:
Provided is a semiconductor apparatus (190, 210, 240) comprising: a substrate (101) having at least one terminal (107a); a plurality of thin semiconductor films (191, 211, 241) including light emitting semiconductor devices (105) respectively, the thin semiconductor films (191, 211, 241) being disposed and bonded on the substrate (101); and a plurality of individual interconnecting lines (106), each of which is formed as a thin conductive film extending from each of the light emitting semiconductor devices (105) to the terminal (107a) in the substrate (101), electrically connecting each of the light emitting semiconductor devices (105) to the terminal (107a). Each of the thin semiconductor films includes a single light emitting semiconductor device which is one of the light emitting semiconductor devices (105) so that the light emitting semiconductor devices are arranged at regular intervals on the substrate.
摘要:
A semiconductor composite apparatus includes a semiconductor thin film layer (105, 501, 806) and a substrate (101, 503, 801). The semiconductor thin film layer (105, 501, 806) and the substrate are bonded to each other with a layer of an alloy (121+122, 511+512, 911+912) of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal (104, 404, 804). The layer of the alloy (121+122, 511+512, 911+912) contains a product (122, 511, 912) resulting from a reaction of the low-melting-point metal (104, 404, 804) and a material of said semiconductor thin film layer (105, 501, 806).
摘要:
A semiconductor composite apparatus includes a semiconductor thin film layer (105, 501, 806) and a substrate (101, 503, 801). The semiconductor thin film layer (105, 501, 806) and the substrate are bonded to each other with a layer of an alloy (121+122, 511+512, 911+912) of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal (104, 404, 804). The layer of the alloy (121+122, 511+512, 911+912) contains a product (122, 511, 912) resulting from a reaction of the low-melting-point metal (104, 404, 804) and a material of said semiconductor thin film layer (105, 501, 806).
摘要:
A semiconductor apparatus includes a substrate having at least one terminal, a thin semiconductor film including at least one semiconductor device, the thin semiconductor film being disposed and bonded on the substrate; and an individual interconnecting line formed as a thin conductive film extending from the semiconductor device in the thin semiconductor film to the terminal in the substrate, electrically connecting the semiconductor device to the terminal. Compared with conventional semiconductor apparatus, the invented apparatus is smaller and has a reduced material cost.