公开(公告)号：EP3401053A1

公开(公告)日：2018-11-14

申请号：EP18169079.3

申请日：2018-04-24

申请人： Panasonic Intellectual Property Management Co., Ltd.

发明人： SAKAI, Kazuki ,  FURUSAWA, Akio ,  KITAURA, Hidetoshi ,  HINE, Kiyohiro

IPC分类号： B23K35/26 ,  C22C13/00 ,  C22C13/02 ,  H01L23/00 ,  B23K1/00 ,  H05K3/34

CPC分类号： B23K35/262 ,  C22C13/00 ,  C22C13/02 ,  H01L24/26 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/2912 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29155 ,  H01L2224/32225 ,  H01L2924/01052 ,  H01L2924/014 ,  H01L2924/3512 ,  H05K3/34

摘要： A solder alloy of the disclosure includes Sb of which a content is in a range of 3 wt% to 30 wt%, Te of which a content is in a range of 0.01 wt% to 1.5 wt%, Au of which a content is in a range of 0.005 wt% to 1 wt%, at least one of Ag and Cu, wherein a content rate of at least one of Ag and Cu in the solder alloy is in a range of 0.1 wt% to 20 wt%; and a content rate of a sum of Ag and Cu in the solder alloy is in a range of 0.1 wt% to 20 wt%;, and a balance of Sn.

公开(公告)号：EP1774589A1

公开(公告)日：2007-04-18

申请号：EP05782182.9

申请日：2005-06-29

申请人： COMMISSARIAT A L'ENERGIE ATOMIQUE

发明人： MORICEAU, Hubert ,  FEUILLET, Guy ,  POCAS, Stéphane

IPC分类号： H01L21/98 ,  H01L25/065 ,  H01L21/18

CPC分类号： H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L27/14634 ,  H01L27/1469 ,  H01L2224/04026 ,  H01L2224/05009 ,  H01L2224/29082 ,  H01L2224/29117 ,  H01L2224/29138 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/83193 ,  H01L2224/83801 ,  H01L2224/8381 ,  H01L2224/8383 ,  H01L2224/83894 ,  H01L2224/9202 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01023 ,  H01L2924/01024 ,  H01L2924/01025 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01042 ,  H01L2924/01046 ,  H01L2924/01057 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/10329 ,  Y10T156/10 ,  H01L2924/01014 ,  H01L2924/01028 ,  H01L2924/01049 ,  H01L2924/01031 ,  H01L2924/3512 ,  H01L2924/00 ,  H01L2924/00014

摘要： The invention relates to a method for assembling, by molecular adhesion, a first substrate and a second substrate along the contact faces, the contact face of the first substrate having an electrically conductive layer on at least a portion of its surface. The inventive method comprises the following steps: depositing a connecting layer on at least a portion of the electrically conductive layer, said connecting layer being capable of ensuring a molecular adhesion with an area of the contact face of the second substrate and capable of being combined with the electrically conductive layer in order to form a conductive alloy; placing the connecting layer of the first substrate in contact with the area of the contact face of the second substrate and bonding it by molecular adhesion; transforming, on all or a portion of its width, all or part of the electrically conductive layer with all or part of the connecting layer and with at least a portion of the width of the area of the contact face over all or part of the surface of the second substrate in order to form a conductive alloy area.

公开(公告)号：EP3136433A4

公开(公告)日：2018-03-28

申请号：EP15782958

申请日：2015-04-24

申请人： MITSUBISHI MATERIALS CORP

发明人： OI SOTARO ,  OOHIRAKI TOMOYA

IPC分类号： H01L23/36 ,  C04B37/00 ,  C04B37/02 ,  H01L23/12 ,  H01L23/13 ,  H01L23/373 ,  H01L23/433 ,  H01L23/473 ,  H05K1/02

CPC分类号： H01L23/3736 ,  C04B35/645 ,  C04B37/021 ,  C04B37/026 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  H01L23/3675 ,  H01L23/3731 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/562 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L2224/29117 ,  H01L2224/32501 ,  H01L2924/0002 ,  H05K1/02 ,  H01L2924/00

摘要： A power-module substrate unit having at least one power-module substrate including one ceramic substrate, a circuit layer formed on one surface of the ceramic substrate, and a metal layer formed on another surface of the ceramic substrate, and a heat sink on which the metal layer of the power-module substrate is bonded, in which the metal layer is made of an aluminum plate having purity of 99.99 mass% or higher; the heat sink is made of an aluminum plate having purity of 99.90 mass% or lower; and the circuit layer has a stacking structure of a first layer made of an aluminum plate having the purity of 99.99 mass% or higher and being bonded to the ceramic substrate and a second layer made of the aluminum plate having the purity lower than 99.90 mass% and being bonded on a surface of the first layer.

公开(公告)号：EP2389337A4

公开(公告)日：2016-09-07

申请号：EP10738898

申请日：2010-01-13

申请人： NORTH STAR INNOVATIONS INC

发明人： MONTEZ RUBEN B ,  PAMATAT ALEX P

IPC分类号： B81C1/00 ,  B81B7/02 ,  H01L21/50 ,  H01L23/10

CPC分类号： H01L23/10 ,  B81B2207/097 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  H01L21/50 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/02 ,  H01L2224/022 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/04026 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05638 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/29013 ,  H01L2224/29016 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83411 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83481 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2924/164 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83

公开(公告)号：EP2499085B1

公开(公告)日：2013-08-28

申请号：EP10757200.0

申请日：2010-09-23

申请人： Robert Bosch GmbH

发明人： TRAUTMANN, Achim ,  REICHENBACH, Ralf

IPC分类号： B81C1/00

CPC分类号： B81C1/00269 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/036 ,  H01L23/10 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/26145 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29076 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/30051 ,  H01L2224/30131 ,  H01L2224/30135 ,  H01L2224/30177 ,  H01L2224/30505 ,  H01L2224/30515 ,  H01L2224/32054 ,  H01L2224/32145 ,  H01L2224/32501 ,  H01L2224/83007 ,  H01L2224/83095 ,  H01L2224/83191 ,  H01L2224/83365 ,  H01L2224/83815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/1631 ,  H01L2924/165 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01049 ,  H01L2924/00014

摘要： A micromechanical assembly for bonding semiconductor substrates includes a semiconductor substrate having a chip pattern having a plurality of semiconductor chips, each having a functional region and an edge region surrounding the functional region. There is a bonding frame made of a bonding alloy made from at least two alloy components in the edge region, spaced apart from the functional region. Within the part of the edge region surrounding the bonding frame between the bonding frame and the functional region, there is at least one stop frame made of at least one of the alloy components, which is configured such that when a melt of the bond alloy contacts the stop frame during bonding, the bonding alloy solidifies.

公开(公告)号：EP2389337A2

公开(公告)日：2011-11-30

申请号：EP10738898.5

申请日：2010-01-13

申请人： Freescale Semiconductor, Inc.

发明人： MONTEZ, Ruben B. ,  PAMATAT, Alex P.

IPC分类号： B81B7/00 ,  B81C1/00

CPC分类号： H01L23/10 ,  B81B2207/097 ,  B81C1/00269 ,  B81C2203/0109 ,  B81C2203/019 ,  H01L21/50 ,  H01L24/02 ,  H01L24/03 ,  H01L24/05 ,  H01L24/27 ,  H01L24/29 ,  H01L24/32 ,  H01L24/83 ,  H01L24/94 ,  H01L2224/02 ,  H01L2224/022 ,  H01L2224/036 ,  H01L2224/0391 ,  H01L2224/04026 ,  H01L2224/05558 ,  H01L2224/05572 ,  H01L2224/05638 ,  H01L2224/2745 ,  H01L2224/27452 ,  H01L2224/2746 ,  H01L2224/276 ,  H01L2224/29013 ,  H01L2224/29016 ,  H01L2224/29083 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29181 ,  H01L2224/29184 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32502 ,  H01L2224/32506 ,  H01L2224/83193 ,  H01L2224/83203 ,  H01L2224/83411 ,  H01L2224/83424 ,  H01L2224/83444 ,  H01L2224/83455 ,  H01L2224/83457 ,  H01L2224/83466 ,  H01L2224/83469 ,  H01L2224/83481 ,  H01L2224/83484 ,  H01L2224/83805 ,  H01L2224/94 ,  H01L2924/10157 ,  H01L2924/15159 ,  H01L2924/164 ,  H01L2924/01032 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/00014 ,  H01L2924/00012 ,  H01L2224/83

摘要： A method that in one embodiment is useful in bonding a first substrate (103) to a second substrate (303) includes forming a layer including metal over the first substrate. The layer including metal in one embodiment surrounds a semiconductor device, which can be a micro electromechanical system (MEMS) device. On the second substrate (303) is formed a first layer comprising silicon (401). A second layer (403) comprising germanium and silicon is formed on the first layer. A third layer (405) comprising germanium is formed on the second layer. The third layer is brought into contact with the layer including metal. Heat (and pressure in some embodiments) is applied to the third layer and the layer including metal to form a mechanical bond material between the first substrate and the second substrate in which the mechanical bond material is electrically conductive. In the case of the mechanical bond surrounding a semiconductor device such as a MEMS, the mechanical bond can be particularly advantageous as a hermetic seal for protecting the MEMS.

公开(公告)号：EP3172349A2

公开(公告)日：2017-05-31

申请号：EP15744284.9

申请日：2015-07-15

申请人： Alpha Assembly Solutions Inc.

发明人： CHOUDHURY, Pritha ,  DE AVILA RIBAS, Morgana ,  MUKHERJEE, Sutapa ,  SARKAR, Siuli ,  PANDHER, Ranjit ,  BHATKAL, Ravindra ,  SINGH, Bawa

IPC分类号： C22C13/00 ,  C22C13/02 ,  B23K1/00 ,  B23K1/002 ,  B23K1/005 ,  B23K1/08 ,  B23K35/00 ,  B23K35/02 ,  B23K35/26

CPC分类号： B23K35/262 ,  B23K1/0016 ,  B23K1/002 ,  B23K1/0056 ,  B23K1/085 ,  B23K35/00 ,  B23K35/0222 ,  B23K35/0227 ,  B23K35/0233 ,  B23K35/0238 ,  B23K35/0244 ,  B23K35/025 ,  B23K35/26 ,  B23K2201/40 ,  B23K2201/42 ,  C22C13/00 ,  C22C13/02 ,  H01L24/29 ,  H01L24/83 ,  H01L2224/29101 ,  H01L2224/29105 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29117 ,  H01L2224/29123 ,  H01L2224/29124 ,  H01L2224/29138 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29147 ,  H01L2224/29149 ,  H01L2224/29155 ,  H01L2224/29157 ,  H01L2224/2916 ,  H01L2224/29163 ,  H01L2224/29166 ,  H01L2224/29169 ,  H01L2224/29171 ,  H01L2224/29172 ,  H01L2224/2918 ,  H01L2224/83815 ,  H01L2924/01015 ,  H01L2924/0102 ,  H01L2924/01032 ,  H01L2924/01034 ,  H01L2924/01052 ,  H01L2924/01058

摘要： A lead-free, antimony-free solder alloy_suitable for use in electronic soldering applications. The solder alloy comprises (a) from 1 to 4 wt. % silver; (b) from 0.5 to 6 wt. % bismuth; (c) from 3.55 to 15 wt. % indium, (d) 3 wt. % or less of copper; (e) one or more optional elements and the balance tin, together with any unavoidable impurities.

摘要翻译： 一种无铅无锑焊料合金，包括：（a）1-4重量％银（b）0.5-6重量％铋（c）3.55-15重量％铟（d）3重量％ （e）任选的一种或多种以下元素0至1重量％的镍0至1重量％的钛0至1重量％的锰0至1重量％的稀土，例如 作为铈0-1重量％的铬0-1重量％的锗0-1重量％的镓0-1重量％的钴0-1重量％的铁0-1重量％的铝0 至1重量％的磷0至1重量％的金0至1重量％的碲0至1重量％的硒0至1重量％的钙0至1重量％的钒0至1 （重量）的0-1％（重量）的铂0-1％（重量）的镁（f）余量的锡以及任何不可避免的杂质。

公开(公告)号：EP3136433A1

公开(公告)日：2017-03-01

申请号：EP15782958.1

申请日：2015-04-24

申请人： Mitsubishi Materials Corporation

发明人： OI, Sotaro ,  OOHIRAKI, Tomoya

IPC分类号： H01L23/36 ,  H01L23/12 ,  H01L23/13 ,  H05K1/02

CPC分类号： H01L23/3736 ,  C04B35/645 ,  C04B37/021 ,  C04B37/026 ,  C04B2237/121 ,  C04B2237/128 ,  C04B2237/343 ,  C04B2237/366 ,  C04B2237/368 ,  C04B2237/402 ,  C04B2237/407 ,  C04B2237/66 ,  C04B2237/704 ,  C04B2237/706 ,  C04B2237/708 ,  C04B2237/86 ,  H01L23/3675 ,  H01L23/3731 ,  H01L23/3735 ,  H01L23/4334 ,  H01L23/473 ,  H01L23/562 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/33 ,  H01L24/83 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/32225 ,  H01L2224/32501 ,  H01L2224/83424 ,  H01L2224/83801 ,  H01L2924/0002 ,  H05K1/02 ,  H05K1/0203 ,  H05K1/0306 ,  H05K3/0061 ,  H01L2924/00 ,  H01L2924/01082 ,  H01L2924/01051 ,  H01L2924/01047 ,  H01L2924/01029 ,  H01L2924/01049

摘要： A power-module substrate unit having at least one power-module substrate including one ceramic substrate, a circuit layer formed on one surface of the ceramic substrate, and a metal layer formed on another surface of the ceramic substrate, and a heat sink on which the metal layer of the power-module substrate is bonded, in which the metal layer is made of an aluminum plate having purity of 99.99 mass% or higher; the heat sink is made of an aluminum plate having purity of 99.90 mass% or lower; and the circuit layer has a stacking structure of a first layer made of an aluminum plate having the purity of 99.99 mass% or higher and being bonded to the ceramic substrate and a second layer made of the aluminum plate having the purity lower than 99.90 mass% and being bonded on a surface of the first layer.

摘要翻译： 一种功率模块基板单元，具有至少一个功率模块基板，其包括一个陶瓷基板，形成在所述陶瓷基板的一个表面上的电路层和形成在所述陶瓷基板的另一个表面上的金属层，以及散热器， 功率模块基板的金属层被接合，其中金属层由纯度为99.99质量％以上的铝板制成; 散热器由纯度为99.90质量％以下的铝板制成， 并且电路层具有由纯度为99.99质量％以上的铝板制成的第一层与陶瓷基板接合的第一层和由纯度低于99.90质量％的铝板制成的第二层的堆叠结构， 并且结合在第一层的表面上。

公开(公告)号：EP1657739A3

公开(公告)日：2012-12-19

申请号：EP05110381.0

申请日：2005-11-04

申请人： Oki Data Corporation

发明人： Ogihara, Mitsuhiko, c/o Oki Digital Imaging Corp. ,  Fujiwara, Hiroyuki, c/o Oki Digital Imaging Corp. ,  Suzuki, Takahito, c/o Oki Digital Imaging Corp. ,  Sakuta, Masaaki ,  Abiko, Ichimatsu

IPC分类号： H01L21/60 ,  B41J2/45

CPC分类号： H01L24/83 ,  B41J2/45 ,  H01L24/29 ,  H01L24/32 ,  H01L27/153 ,  H01L2224/27444 ,  H01L2224/2747 ,  H01L2224/2908 ,  H01L2224/29082 ,  H01L2224/291 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29113 ,  H01L2224/29114 ,  H01L2224/29117 ,  H01L2224/29139 ,  H01L2224/29144 ,  H01L2224/29155 ,  H01L2224/29164 ,  H01L2224/32502 ,  H01L2224/83005 ,  H01L2224/83011 ,  H01L2224/83013 ,  H01L2224/83192 ,  H01L2224/83203 ,  H01L2224/8382 ,  H01L2224/83825 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01015 ,  H01L2924/01018 ,  H01L2924/01024 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/01046 ,  H01L2924/01047 ,  H01L2924/01049 ,  H01L2924/0105 ,  H01L2924/01058 ,  H01L2924/01072 ,  H01L2924/01073 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01322 ,  H01L2924/07802 ,  H01L2924/10253 ,  H01L2924/10329 ,  H01L2924/10336 ,  H01L2924/10349 ,  H01L2924/12041 ,  H01L2924/12042 ,  H01L2924/14 ,  H01L2924/157 ,  H01L2924/15787 ,  H01L2924/15788 ,  H01L2924/1579 ,  H01L2924/00014 ,  H01L2924/01007 ,  H01L2924/00

摘要： A semiconductor composite apparatus includes a semiconductor thin film layer (105, 501, 806) and a substrate (101, 503, 801). The semiconductor thin film layer (105, 501, 806) and the substrate are bonded to each other with a layer of an alloy (121+122, 511+512, 911+912) of a high-melting-point metal and a low-melting-point metal formed between the semiconductor thin film layer and the substrate. The alloy has a higher melting point than the low-melting-point metal (104, 404, 804). The layer of the alloy (121+122, 511+512, 911+912) contains a product (122, 511, 912) resulting from a reaction of the low-melting-point metal (104, 404, 804) and a material of said semiconductor thin film layer (105, 501, 806).

公开(公告)号：EP2499085A2

公开(公告)日：2012-09-19

申请号：EP10757200.0

申请日：2010-09-23

申请人： Robert Bosch GmbH

发明人： TRAUTMANN, Achim ,  REICHENBACH, Ralf

IPC分类号： B81C3/00

CPC分类号： B81C1/00269 ,  B81C2201/019 ,  B81C2203/0118 ,  B81C2203/019 ,  B81C2203/036 ,  H01L23/10 ,  H01L24/29 ,  H01L24/30 ,  H01L24/32 ,  H01L24/83 ,  H01L25/50 ,  H01L2224/26145 ,  H01L2224/29011 ,  H01L2224/29013 ,  H01L2224/29076 ,  H01L2224/291 ,  H01L2224/29101 ,  H01L2224/29109 ,  H01L2224/29111 ,  H01L2224/29117 ,  H01L2224/29124 ,  H01L2224/29144 ,  H01L2224/30051 ,  H01L2224/30131 ,  H01L2224/30135 ,  H01L2224/30177 ,  H01L2224/30505 ,  H01L2224/30515 ,  H01L2224/32054 ,  H01L2224/32145 ,  H01L2224/32501 ,  H01L2224/83007 ,  H01L2224/83095 ,  H01L2224/83191 ,  H01L2224/83365 ,  H01L2224/83815 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01029 ,  H01L2924/01032 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/0132 ,  H01L2924/01322 ,  H01L2924/014 ,  H01L2924/1461 ,  H01L2924/1631 ,  H01L2924/165 ,  H01L2924/00 ,  H01L2924/01014 ,  H01L2924/01049 ,  H01L2924/00014

摘要： A micromechanical assembly for bonding semiconductor substrates includes a semiconductor substrate having a chip pattern having a plurality of semiconductor chips, each having a functional region and an edge region surrounding the functional region. There is a bonding frame made of a bonding alloy made from at least two alloy components in the edge region, spaced apart from the functional region. Within the part of the edge region surrounding the bonding frame between the bonding frame and the functional region, there is at least one stop frame made of at least one of the alloy components, which is configured such that when a melt of the bond alloy contacts the stop frame during bonding, the bonding alloy solidifies.