公开(公告)号：EP1463108A2

公开(公告)日：2004-09-29

申请号：EP04251663.3

申请日：2004-03-23

申请人： Osaka Prefecture ,  HOSIDEN CORPORATION

发明人： Izumi, Katsutoshi c/o Osaka Prefecture University ,  Nakao, Motoi c/o Osaka Prefecture University ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  C30B29/36

CPC分类号： H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

摘要： An object of the present invention is to provide a method for manufacturing a buried insulating layer type semiconductor silicon carbide substrate having a high level of flatness in the interfaces of which the contacts are made by the insulating layer and a manufacturing device for the same.
[Constitution] A manufacturing device A is a device for manufacturing a buried insulating layer type single crystal silicon carbide substrate within a film formation chamber 200 after placing, in this film formation chamber 200, an SOI substrate having a buried insulating layer 120 positioned on a silicon substrate 110 and a surface silicon layer 130 formed on this buried insulating layer 120, comprises: a film formation chamber 200 for receiving SOI substrate 100; a gas supplying means 300 for supplying various types of gases required for the manufacture into the film formation chamber 200; an infrared ray irradiating means 400 for irradiating the surface silicon layer 130 of the SOI substrate 100 with infrared rays I; and a control part 500 for controlling gas supplying means 300 and infrared ray irradiating means 400.

公开(公告)号：EP1333482A2

公开(公告)日：2003-08-06

申请号：EP03250583.6

申请日：2003-01-30

申请人： Osaka Prefecture ,  Hosiden Corporation

发明人： Izumi, Katsutoshi ,  Nakao, Motoi ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/205 ,  C23C16/02 ,  C23C16/32 ,  H01L21/324

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

摘要： [Purpose] A single crystal silicon carbide thin film is inexpensively and easily formed on an SOI substrate.
[Constitution] The manufacturing method comprises the steps of:

(1) placing in a furnace 200 an SOI substrate 100 having a surface silicon layer 130 of thickness no greater than 10nm and having a buried insulator layer 120, and increasing the temperature of the atmosphere within furnace 200 while supplying a mixture of hydrogen gas G1 and hydrocarbon gas G2 into furnace 200 so that surface silicon layer 130 is metamorphosed into single crystal silicon carbide thin film 140;
(2) depositing a carbon thin film 150 on thin film 140 by excessively carrying out the first step;
(3) replacing mixed gas (G1+G2) with an inert gas G4 containing oxygen gas G3 mixed in a predetermined ratio and heating SOI substrate 100 to no less than 550°C to remove carbon thin film 150 through etching;
(4) replacing inert gas G4 containing oxygen gas G3 with a pure inert gas G4 and increasing the temperature of the atmosphere within furnace 200 to a predetermined temperature; and
(5) supplying hydrogen gas G1 and a silane-based gas G5 into furnace 200 and maintaining the predetermined temperature of the atmosphere so that a new single crystal silicon carbide thin film 160 grows on the surface of said SOI substrate 100.

摘要翻译： [目的]的单晶碳化硅薄膜是在SOI衬底的廉价且容易地形成。 [构成]的制造方法，包括以下步骤：（1）放置在炉200上的SOI衬底100，其具有厚度不大于10nm的表面硅层130和具有掩埋绝缘体层120，并增加环境的温度 炉200内，同时氢气G1和烃气G2的混合物供给到炉200所以没表面硅层130被变态为单晶碳化硅薄膜140; （2）通过过度进行第一步上的薄膜140上沉积碳薄膜150; （3）用惰性气体置换的混合气体（G1 + G2），以氧气气体G3 G4包含混合在一个比预定的加热和SOI衬底100至不小于550℃，通过蚀刻以去除碳薄膜150; （4）替换惰性气体G4含氧气体G3与纯惰性气体G4和炉200内增加气氛的温度到预定的温度; 和（5）供给氢气G1和硅烷类气体G5入炉200和维护的气氛的预定温度，以便做一个新的单晶碳化硅薄膜160生长的SOI衬底的表面上的所述第100个

公开(公告)号：EP1463108A3

公开(公告)日：2006-02-01

申请号：EP04251663.3

申请日：2004-03-23

申请人： OSAKA PREFECTURE ,  HOSIDEN CORPORATION

发明人： Izumi, Katsutoshi c/o Osaka Prefecture University ,  Nakao, Motoi c/o Osaka Prefecture University ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  C30B29/36 ,  H01L21/324 ,  C23C16/32 ,  C23C16/02

CPC分类号： H01L21/7624 ,  C23C16/0218 ,  C23C16/0236 ,  C23C16/325 ,  C23C16/482 ,  C30B1/10 ,  C30B29/36 ,  H01L21/02381 ,  H01L21/02491 ,  H01L21/02529 ,  H01L21/02614 ,  H01L21/0445 ,  H01L21/2007 ,  H01L21/7602 ,  Y10T29/41

摘要： An object of the present invention is to provide a method for manufacturing a buried insulating layer type semiconductor silicon carbide substrate having a high level of flatness in the interfaces of which the contacts are made by the insulating layer and a manufacturing device for the same.
[Constitution] A manufacturing device A is a device for manufacturing a buried insulating layer type single crystal silicon carbide substrate within a film formation chamber 200 after placing, in this film formation chamber 200, an SOI substrate having a buried insulating layer 120 positioned on a silicon substrate 110 and a surface silicon layer 130 formed on this buried insulating layer 120, comprises: a film formation chamber 200 for receiving SOI substrate 100; a gas supplying means 300 for supplying various types of gases required for the manufacture into the film formation chamber 200; an infrared ray irradiating means 400 for irradiating the surface silicon layer 130 of the SOI substrate 100 with infrared rays I; and a control part 500 for controlling gas supplying means 300 and infrared ray irradiating means 400.

摘要翻译： 本发明的一个目的是提供一种用于制造具有在其中的接口平坦的高电平的接触被绝缘层和用于其的制造装置制成的埋入绝缘层型半导体碳化硅衬底的方法。 [构成]的制造装置A是用于放置后制造成膜室200内的埋入绝缘层型单晶碳化硅衬底，在该膜形成室200到SOI衬底具有位于一条的掩埋绝缘层120的装置 硅衬底110和形成在该埋入绝缘层120上的表面硅层130，包括：用于接收SOI基板100的膜形成室200; 一个气体供给装置300供给用于各种类型的用于制造到膜形成室200需要的气体; 红外线照射装置400照射的表面硅层的SOI 100利用红外光线I的130的基板; 和用于控制气体供给装置300和红外线照射的控制部500的手段第四百

公开(公告)号：EP1333482B1

公开(公告)日：2008-06-25

申请号：EP03250583.6

申请日：2003-01-30

申请人： OSAKA PREFECTURE ,  HOSIDEN CORPORATION

发明人： Izumi, Katsutoshi ,  Nakao, Motoi ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/205 ,  C23C16/02 ,  C23C16/32 ,  H01L21/324

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

公开(公告)号：EP1333482A3

公开(公告)日：2006-02-01

申请号：EP03250583.6

申请日：2003-01-30

申请人： OSAKA PREFECTURE ,  HOSIDEN CORPORATION

发明人： Izumi, Katsutoshi ,  Nakao, Motoi ,  Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Hirai, Seisaku ,  Jobe, Fumihiko ,  Tanaka, Tomoyuki

IPC分类号： H01L21/762 ,  H01L21/20 ,  H01L21/205 ,  C23C16/02 ,  C23C16/32 ,  H01L21/324

CPC分类号： H01L21/7624 ,  H01L21/02378 ,  H01L21/02381 ,  H01L21/02488 ,  H01L21/02529 ,  H01L21/02532 ,  H01L21/02639 ,  H01L21/02656 ,  H01L21/0445 ,  H01L21/7602 ,  H01L21/76251

摘要： [Purpose] A single crystal silicon carbide thin film is inexpensively and easily formed on an SOI substrate.
[Constitution] The manufacturing method comprises the steps of:

(1) placing in a furnace 200 an SOI substrate 100 having a surface silicon layer 130 of thickness no greater than 10nm and having a buried insulator layer 120, and increasing the temperature of the atmosphere within furnace 200 while supplying a mixture of hydrogen gas G1 and hydrocarbon gas G2 into furnace 200 so that surface silicon layer 130 is metamorphosed into single crystal silicon carbide thin film 140;
(2) depositing a carbon thin film 150 on thin film 140 by excessively carrying out the first step;
(3) replacing mixed gas (G1+G2) with an inert gas G4 containing oxygen gas G3 mixed in a predetermined ratio and heating SOI substrate 100 to no less than 550°C to remove carbon thin film 150 through etching;
(4) replacing inert gas G4 containing oxygen gas G3 with a pure inert gas G4 and increasing the temperature of the atmosphere within furnace 200 to a predetermined temperature; and
(5) supplying hydrogen gas G1 and a silane-based gas G5 into furnace 200 and maintaining the predetermined temperature of the atmosphere so that a new single crystal silicon carbide thin film 160 grows on the surface of said SOI substrate 100.

公开(公告)号：EP1085784A2

公开(公告)日：2001-03-21

申请号：EP00308009.0

申请日：2000-09-14

申请人： SANYO ELECTRIC CO., LTD. ,  HOSIDEN CORPORATION

发明人： Okawa, Shigeaki ,  Ohkoda, Toshiyuki ,  Ohbayashi, Yoshiaki ,  Yasuda, Mamoru ,  Saeki, Shinichi ,  Osawa, Shuji

IPC分类号： H04R19/00

CPC分类号： H04R7/16 ,  H04R19/005 ,  H04R19/04

摘要： A stationary electrode layer 12 is formed on a semiconductor substrate 11, and a vibrating diaphragm 16 is disposed on spacers 14. The vibrating diaphragm 16 is placed so as to protrude from an end of the semiconductor substrate 11, and terminal pads 20 to 23 are placed with being exposed from the vibrating diaphragm 16.

摘要翻译： 固定电极层12被端子焊盘形成在半导体基板11和振动膜16设置在间隔件14的振动膜16被放置，以便从在半导体基板11的端部突出，并且20至23 从振动膜16 暴露放置

公开(公告)号：EP1203970B1

公开(公告)日：2006-03-15

申请号：EP01125403.4

申请日：2001-10-31

申请人： HOSIDEN CORPORATION

发明人： Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Nakagawa, Hiroshi

IPC分类号： G02B6/38 ,  G02B6/42

CPC分类号： G02B6/4201 ,  G02B6/3897 ,  G02B6/4256 ,  G02B6/428 ,  G02B6/4292 ,  H05K3/341

公开(公告)号：EP1091618A2

公开(公告)日：2001-04-11

申请号：EP00308761.6

申请日：2000-10-04

申请人： SANYO ELECTRIC CO., LTD. ,  HOSIDEN CORPORATION

发明人： Okawa, Shigeaki ,  Ohkoda, Toshiyuki ,  Ohbayashi, Yoshiaki ,  Yasuda, Mamoru ,  Saeki, Shinichi ,  Osawa, Shuji

IPC分类号： H04R23/00

CPC分类号： H04R19/005 ,  H04R19/04

摘要： First, a stationary electrode layer is formed over a semiconductor substrate and an integrated network is composed in a circuit element area around the stationary electrode layer by electrode wiring forming each circuit element. A spacer is arranged on a passivation film in plural places. A dummy island is formed in an area between the circuit element area and the stationary electrode layer area. Supply potential Vcc is applied to the dummy island and ground potential GND is applied to a P + -type separated area.

摘要翻译： 首先，在半导体衬底上形成固定电极层，并且通过形成每个电路元件的电极布线，在固定电极层周围的电路元件区域中形成集成网络。 在多个位置上的钝化膜上设置间隔物。 在电路元件区域和固定电极层区域之间的区域中形成虚拟岛。 供电电位Vcc施加到虚拟岛，接地电位GND施加到P +型分离区域。

公开(公告)号：EP1203970A3

公开(公告)日：2003-05-28

申请号：EP01125403.4

申请日：2001-10-31

申请人： HOSIDEN CORPORATION

发明人： Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Nakagawa, Hiroshi

IPC分类号： G02B6/38 ,  G02B6/42

CPC分类号： G02B6/4201 ,  G02B6/3897 ,  G02B6/4256 ,  G02B6/428 ,  G02B6/4292 ,  H05K3/341

摘要： A metal cover 21 is mounted on the rear end side of a body 11 to cover its top, both side surfaces and read end face, and the metal cover 21 has a pair of soldering portions 25, which are soldered to a circuit board so that the body 11 is pressed and fixed to the circuit board.

公开(公告)号：EP1203970A2

公开(公告)日：2002-05-08

申请号：EP01125403.4

申请日：2001-10-31

申请人： HOSIDEN CORPORATION

发明人： Ohbayashi, Yoshiaki ,  Mine, Keiji ,  Nakagawa, Hiroshi

IPC分类号： G02B6/38

CPC分类号： G02B6/4201 ,  G02B6/3897 ,  G02B6/4256 ,  G02B6/428 ,  G02B6/4292 ,  H05K3/341

摘要： A metal cover 21 is mounted on the rear end side of a body 11 to cover its top, both side surfaces and read end face, and the metal cover 21 has a pair of soldering portions 25, which are soldered to a circuit board so that the body 11 is pressed and fixed to the circuit board.

摘要翻译： 金属盖21安装在主体11的后端侧以覆盖其顶部，两个侧表面和读取端面，并且金属盖21具有焊接到电路板的一对焊接部25，使得 主体11被按压并固定到电路板。