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1.发明授权
公开(公告)号：EP2313934B1
公开(公告)日：2018-01-17
申请号：EP09775997.1
申请日：2009-07-21
IPC分类号： H01L21/02 , H01S5/042 , H01L33/24 , H01L33/00 , H01S5/223 , H01L31/0236 , H01S5/32 , H01S5/20 , H01S5/24
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L31/0236 , H01L33/007 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/2031 , H01S5/2231 , H01S5/24 , H01S5/3201 , H01S5/3211 , H01S5/3213 , H01S5/3215 , H01S2301/18 , H01S2304/12 , H01L2924/00
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公开(公告)号：EP2514049A1
公开(公告)日：2012-10-24
申请号：EP10779771.4
申请日：2010-11-12
发明人： DINI, Dimitri , SCHILLGALIES, Marc
CPC分类号： H01S5/32341 , H01S5/0201 , H01S5/02272 , H01S5/0425 , H01S5/2201 , H01S2304/12
摘要： The invention relates to a semiconductor laser (1), which comprises a semiconductor body (2) having an active region (20) for generating radiation and a bridge-shaped region (3). According to the invention, the bridge-shaped region has a longitudinal axis (30) running along an emission direction, which is arranged offset in the transverse direction in relation to a center axis (25) running in the emission direction. The invention further relates to a method for producing a semiconductor laser.
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公开(公告)号：EP2514049B1
公开(公告)日：2018-08-08
申请号：EP10779771.4
申请日：2010-11-12
发明人： DINI, Dimitri , SCHILLGALIES, Marc
CPC分类号： H01S5/32341 , H01S5/0201 , H01S5/02272 , H01S5/0425 , H01S5/2201 , H01S2304/12
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公开(公告)号：EP2425507A1
公开(公告)日：2012-03-07
申请号：EP10714321.6
申请日：2010-04-22
IPC分类号： H01S5/20 , H01S5/0683
CPC分类号： B82Y20/00 , H01L2224/48091 , H01L2224/48247 , H01S5/02212 , H01S5/028 , H01S5/0281 , H01S5/0683 , H01S5/2031 , H01S5/32341 , H01S5/34 , H01S2301/185 , H01L2924/00014
摘要： The invention relates to an edge-emitting semiconductor laser comprising a semiconductor body (10), which comprises a waveguide region (4), wherein the waveguide region (4) comprises a first waveguide layer (2a), a second waveguide layer (2b), and an active layer (3) arranged between the first waveguide layer (2a) and the second waveguide layer (2b) for producing laser radiation (5), and the waveguide region (4) is arranged between a first cover layer (1a) and a second cover layer (1b) following the waveguide region (4) in the growth direction of the semiconductor body (10). The waveguide region (4) has a thickness (d) of 400 nm or less, and an emission angle of the laser radiation (5) leaving the semiconductor body (10) in a direction parallel to the layer plane of the active layer (3) and the emission angle of the laser radiation (5) leaving the semiconductor body (10) in a direction perpendicular to the layer plane of the active layer (3) differ by less than a factor of 3.
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5.发明公开HERSTELLUNGSVERFAHREN FUR EINEN III-V BASIERTEN INDIUM- HALTIGEN OPTOELEKTRONISCHEN HALBLEITERCHIP UND ENTSPRECHENDER CHIP 有权PROCESS FOR A基于III-V含铟光电子半导体芯片与该Chip
公开(公告)号：EP2313934A1
公开(公告)日：2011-04-27
申请号：EP09775997.1
申请日：2009-07-21
CPC分类号： H01L33/24 , H01L21/0237 , H01L21/02458 , H01L21/02494 , H01L21/0254 , H01L21/02587 , H01L31/0236 , H01L33/007 , H01L33/486 , H01L33/62 , H01L2924/0002 , H01S5/0421 , H01S5/2009 , H01S5/2031 , H01S5/2231 , H01S5/24 , H01S5/3201 , H01S5/3211 , H01S5/3213 , H01S5/3215 , H01S2301/18 , H01S2304/12 , H01L2924/00
摘要： The present invention describes an optoelectronic semiconductor chip (1) having a non-planar growth layer (2), which contains at least one first nitride compound semiconductor material, as well as an active zone (5), which contains at least one second nitride compound semiconductor material and is arranged on the growth layer (2), and a covering layer (7) which is arranged on the active zone (5), wherein the growth layer (2) has structure elements (4) on a growth surface (3) facing the active zone (5).
摘要翻译： 的光电子半导体芯片（1）中描述，它包括一个非平面生长层（2），其包含至少一个第一氮化物半导体材料，以及有源区（5），其包含至少一种第二氮化物化合物半导体 材料和设置在生长层（2）上，和顶层（7）所有这是在有源区布置（5），生长层（2）包括结构元件（4）在一生长表面（3） 面对活性区（5）。
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