公开(公告)号：EP1741807A4

公开(公告)日：2009-07-08

申请号：EP05736696

申请日：2005-04-27

申请人： PANASONIC CORP ,  MORI YUSUKE

发明人： MORI YUSUKE ,  MINEMOTO HISASHI ,  KITAOKA YASUO ,  KIDOGUCHI ISAO ,  KAWAMURA FUMIO ,  SASAKI TAKATOMO ,  UMEDA HIDEKAZU ,  TAKAHASHI YASUHITO

IPC分类号： C30B9/00 ,  C30B9/10 ,  C30B29/38 ,  C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： An apparatus for production of a crystal of Group III element nitride and process for producing a crystal of Group III element nitride, by which a crystal of high quality can be produced. The crystal growth by means of this apparatus can be performed in, for example, the following manner. Raw material for crystal (131) and nitrogenous gas are introduced in reaction vessel (120) and heated by means of heater (110), and a crystal is grown in pressurized atmosphere. The above gas is delivered from gas supply unit (180) through a gas inlet of the reaction vessel into the reaction vessel (120), and discharged from a gas outlet of the reaction vessel into the interior of pressure tight vessel (102). As the above gas is directly, without passing through the pressure tight vessel (102), introduced into the reaction vessel (120), the mingling of impurities adhering to the pressure tight vessel (102), etc. into a field of crystal growth can be avoided. Further, as the above gas flows through the interior of the reaction vessel (120), there can be avoided, for example, condensation of vaporized alkali metal, etc. at the gas inlet, etc. and inflow thereof into the gas supply unit (180), etc. As a result, the quality of crystal of Group III element nitride obtained can be enhanced.

公开(公告)号：EP1736573A4

公开(公告)日：2010-09-15

申请号：EP05727620

申请日：2005-03-31

申请人： PANASONIC CORP ,  MORI YUSUKE

发明人： MORI YUSUKE ,  MINEMOTO HISASHI ,  KITAOKA YASUO ,  KIDOGUCHI ISAO ,  KAWAMURA FUMIO ,  SASAKI TAKATOMO ,  TAKAHASHI YASUHITO

IPC分类号： C30B29/38 ,  C30B9/00 ,  C30B9/08 ,  C30B9/10

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

公开(公告)号：EP1705717A4

公开(公告)日：2009-04-08

申请号：EP05703486

申请日：2005-01-12

申请人： PANASONIC CORP

发明人： TAKAHASHI YASUHITO ,  ONO YUKIYOSHI

IPC分类号： H01L31/0336 ,  H01L31/0224 ,  H01L31/0236

CPC分类号： H01L31/0749 ,  H01L31/022483 ,  H01L31/02363 ,  Y02E10/541 ,  Y02P70/521

摘要： Disclosed is a fuel cell comprising a substrate (21), a conductive film (22) formed on the substrate (21), a compound semiconductor layer (23) formed on the conductive layer (22) and including a p-type semiconductor crystal containing a group Ib element, a group IIIb element and a group VIb element, an n-type windowed layer (24) formed on the compound semiconductor layer (23) and having an opening (29), and an n-type transparent conductive layer formed on the n-type windowed layer (24) and a part of the compound semiconductor layer (23) under the opening of the n-type windowed layer (24). The compound semiconductor layer (23) has a high resistance portion (23B) containing an n-type impurity which is doped into the p-type semiconductor crystal, and the high resistance portion (23B) is partially formed near a surface of the compound semiconductor layer (23) on the far side from the conductive film (22) in a position under the opening (29) of the n-type windowed layer (24).

公开(公告)号：EP1981093A4

公开(公告)日：2011-10-05

申请号：EP07707125

申请日：2007-01-19

申请人： PANASONIC CORP

发明人： MINEMOTO HISASHI ,  KITAOKA YASUO ,  KAWAGUCHI YASUTOSHI ,  TAKAHASHI YASUHITO ,  HASEGAWA YOSHIAKI

IPC分类号： C30B19/02 ,  H01L33/32 ,  C30B29/38 ,  C30B29/40 ,  H01L33/00 ,  H01L33/62 ,  H01S5/02 ,  H01S5/323

CPC分类号： H01S5/32341 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  H01L33/0075 ,  H01L33/025 ,  H01L33/32 ,  H01S5/0206 ,  H01S5/22 ,  H01S5/305

摘要： An object of the present invention is to obtain, with respect to a semiconductor light-emitting element using a group III nitride semiconductor substrate, a semiconductor light-emitting element having an excellent light extraction property by selecting a specific substrate dopant and controlling the concentration thereof. The semiconductor light-emitting element comprises a substrate composed of a group III nitride semiconductor comprising germanium (Ge) as a dopant, an n-type semiconductor layer composed of a group III nitride semiconductor formed on the substrate, an active layer composed of a group III nitride semiconductor formed on the n-type semiconductor layer, and a p-type semiconductor layer composed of a group III nitride semiconductor formed on the active layer in which the substrate has a germanium (Ge) concentration of 2 x 10 17 to 2 x 10 19 cm -3 . The substrate is produced in a nitrogen-containing atmosphere using a melt comprising at least a group III element, an alkali or alkaline earth metal, and germanium (Ge) and nitrogen.