公开(公告)号：EP1736573A4

公开(公告)日：2010-09-15

申请号：EP05727620

申请日：2005-03-31

申请人： PANASONIC CORP ,  MORI YUSUKE

发明人： MORI YUSUKE ,  MINEMOTO HISASHI ,  KITAOKA YASUO ,  KIDOGUCHI ISAO ,  KAWAMURA FUMIO ,  SASAKI TAKATOMO ,  TAKAHASHI YASUHITO

IPC分类号： C30B29/38 ,  C30B9/00 ,  C30B9/08 ,  C30B9/10

CPC分类号： C30B9/10 ,  C30B29/403 ,  C30B29/406 ,  Y10T117/1092 ,  Y10T117/1096

公开(公告)号：EP1741807A4

公开(公告)日：2009-07-08

申请号：EP05736696

申请日：2005-04-27

申请人： PANASONIC CORP ,  MORI YUSUKE

发明人： MORI YUSUKE ,  MINEMOTO HISASHI ,  KITAOKA YASUO ,  KIDOGUCHI ISAO ,  KAWAMURA FUMIO ,  SASAKI TAKATOMO ,  UMEDA HIDEKAZU ,  TAKAHASHI YASUHITO

IPC分类号： C30B9/00 ,  C30B9/10 ,  C30B29/38 ,  C30B35/00

CPC分类号： C30B29/403 ,  C30B9/10 ,  C30B29/406 ,  C30B35/00 ,  Y10T117/1064 ,  Y10T117/1096

摘要： An apparatus for production of a crystal of Group III element nitride and process for producing a crystal of Group III element nitride, by which a crystal of high quality can be produced. The crystal growth by means of this apparatus can be performed in, for example, the following manner. Raw material for crystal (131) and nitrogenous gas are introduced in reaction vessel (120) and heated by means of heater (110), and a crystal is grown in pressurized atmosphere. The above gas is delivered from gas supply unit (180) through a gas inlet of the reaction vessel into the reaction vessel (120), and discharged from a gas outlet of the reaction vessel into the interior of pressure tight vessel (102). As the above gas is directly, without passing through the pressure tight vessel (102), introduced into the reaction vessel (120), the mingling of impurities adhering to the pressure tight vessel (102), etc. into a field of crystal growth can be avoided. Further, as the above gas flows through the interior of the reaction vessel (120), there can be avoided, for example, condensation of vaporized alkali metal, etc. at the gas inlet, etc. and inflow thereof into the gas supply unit (180), etc. As a result, the quality of crystal of Group III element nitride obtained can be enhanced.

公开(公告)号：EP1754810A4

公开(公告)日：2009-02-25

申请号：EP05727904

申请日：2005-03-30

申请人： SUMITOMO ELECTRIC INDUSTRIES ,  MORI YUSUKE

发明人： SASAKI TAKATOMO ,  MORI YUSUKE ,  YOSHIMURA MASASHI ,  KAWAMURA FUMIO ,  NAKAHATA SEIJI ,  HIROTA RYU

IPC分类号： C30B29/38 ,  C30B9/12 ,  C30B11/00 ,  C30B11/06 ,  C30B29/40 ,  H01L21/208 ,  H01L33/00 ,  H01S5/323

CPC分类号： C30B9/12 ,  C30B11/00 ,  C30B29/403 ,  H01L21/02389 ,  H01L21/02392 ,  H01L21/0242 ,  H01L21/02458 ,  H01L21/0254 ,  H01L21/02625 ,  H01L33/0075 ,  H01S5/32341

公开(公告)号：EP1736572A4

公开(公告)日：2009-02-25

申请号：EP05721657

申请日：2005-03-30

申请人： SUMITOMO ELECTRIC INDUSTRIES ,  MORI YUSUKE

发明人： SASAKI TAKATOMO ,  MORI YUSUKE ,  YOSHIMURA MASASHI ,  KAWAMURA FUMIO ,  HIROTA RYU ,  NAKAHATA SEIJI

IPC分类号： C30B29/38 ,  C30B9/00 ,  C30B9/08 ,  C30B9/10 ,  C30B11/00 ,  C30B11/06 ,  C30B29/40 ,  H01L21/208

CPC分类号： C30B9/08 ,  C30B9/00 ,  C30B11/00 ,  C30B11/06 ,  C30B29/403

摘要： A method for producing a group III nitride crystal substrate comprising a step for introducing an alkali metal element-containing substance (1), a group III element-containing substance (2) and a nitrogen element-containing substance (3) into a reaction container (51), a step for forming a melt (5) containing at least an alkali metal element, group III element and nitrogen element in the reaction container (51), and a step for growing a group III nitride crystal (6) from the melt (5) is characterized in that the alkali metal element-containing substance (1) is handled within a dry container (100) wherein the moisture concentration is controlled to 1.0 ppm or less at least during the step wherein the alkali metal element-containing substance (1) is introduced into the reaction container (51). Consequently, there can be obtained a group III nitride crystal substrate having a small light absorption coefficient. Also disclosed is a group III nitride semiconductor device.

公开(公告)号：EP1560261A4

公开(公告)日：2008-02-20

申请号：EP04735986

申请日：2004-06-03

申请人： SUMITOMO ELECTRIC INDUSTRIES ,  MORI YUSUKE

发明人： NAKAHATA SEIJI ,  HIROTA RYU ,  ISHIBASHI KEIJI ,  SASAKI TAKATOMO ,  MORI YUSUKE

IPC分类号： C30B29/38 ,  C30B29/40 ,  C30B33/00 ,  C30B33/10 ,  H01L21/306

CPC分类号： C30B29/403 ,  C30B29/38 ,  C30B33/00 ,  C30B33/10 ,  H01L21/30612

摘要： A method for processing a nitride semiconductor crystal surface is characterized in that a process liquid (15) containing at least Na, Li or Ca is brought into contact with the surface of a nitride semiconductor crystal (11). The process liquid (15) may be a liquid containing at least Na whose Na content is 5-95 mol%. The process liquid (15) may be a liquid containing at least Li whose Li content is 5-100 mol%. A nitride semiconductor crystal obtained by such a method is also disclosed which has a maximum surface scratch depth of 0.01 mum or less and an average degenerated layer thickness of 2 mum or less. Namely, the method for processing a nitride semiconductor crystal surface enables to reduce surface scratch depth and degenerated layer thickness, and the nitride semiconductor crystal obtained by such a method has a shallow surface scratch depth and a thin degenerated layer thickness.

公开(公告)号：EP2071062A4

公开(公告)日：2011-08-03

申请号：EP08720330

申请日：2008-03-05

申请人： PANASONIC CORP

发明人： YAMADA OSAMU ,  MINEMOTO JISASHI ,  HIRANAKA KOUICHI ,  HATAKEYAMA TAKESHI ,  SASAKI TAKATOMO ,  MORI YUSUKE ,  KAWAMURA FUMIO ,  KITAOKA YASUO

IPC分类号： C30B29/38 ,  C30B19/02 ,  H01L33/00 ,  H01L33/32 ,  H01S5/323

CPC分类号： H01L31/03044 ,  C30B9/10 ,  C30B11/12 ,  C30B19/02 ,  C30B29/403 ,  C30B29/406 ,  G02B1/02