公开(公告)号：EP0436988B1

公开(公告)日：1995-11-15

申请号：EP90203405.7

申请日：1990-12-18

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Slatter, John Alfred George

IPC分类号： H01L29/06 ,  H01L27/07 ,  H01L31/11

CPC分类号： H01L29/0619 ,  H01L31/1105

公开(公告)号：EP0280368A2

公开(公告)日：1988-08-31

申请号：EP88200297.5

申请日：1988-02-19

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Whight, Kenneth Ronald ,  Slatter, John Alfred George ,  Coe, David James

IPC分类号： H01L31/10 ,  H01L29/60

CPC分类号： H01L31/103 ,  H01L31/1105

摘要： A photosensitive device comprises a semiconductor body (1) having a first region (2) of one conductivity type adjacent a given surface (3) of the body with a second region (4) of the opposite conductivity type surrounding the first region (2) so as to form with the first region a main pn junction (5) terminating at the given surface (3), the main pn junction (5) being reverse-biassed in operation of the device. One or more further regions (6) of the one conductivity type surround the main pn junction (5) adjacent the given surface (3) so that the or each further region (6) forms a photosensitive pn junction (17) with the second region (4), the further region(s) (6) lying within the spread of the depletion region of the main pn junction (5) when the main pn junction (5) is reverse-biassed in operation of the device so as to increase the breakdown voltage of the main pn junction (5), and means are provided for transmitting light into the semiconductor body via the given surface to enable photogeneration of charge carriers in the vicinity of the photosensitive pn junction(s) (17). The further region(s) may comprise one or more annular floating regions (6ʺ) spaced apart from the main pn junction(s) and each other.

摘要翻译： 一种感光装置包括半导体本体（1），其具有与主体的给定表面（3）相邻的一种导电类型的第一区域（2）和围绕第一区域（2）的相反导电类型的第二区域（4） 以便与第一区域形成终止在给定表面（3）处的主pn结（5），主pn结（5）在装置的操作中被反向偏压。 一个导电类型的一个或多个另外的区域（6）围绕与给定表面（3）相邻的主pn结（5）围绕，使得或每个另外的区域（6）形成光敏pn结（17），其中第二区 （4）中，当主pn结（5）在装置的操作中被反向偏压时，位于主pn结（5）的耗尽区的扩展中的另外的区域（6）以增加 提供主pn结（5）的击穿电压，以及用于经由给定表面将光透射到半导体本体中的装置，以使得光敏pn结（17）附近的电荷载流子能够发光。 另外的区域可以包括与主pn结彼此间隔开的一个或多个环形浮动区域（6“）。

公开(公告)号：EP0425037A2

公开(公告)日：1991-05-02

申请号：EP90202803.4

申请日：1990-10-19

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Slatter, John Alfred George ,  Brockman, Henry Edward ,  Haisma, Jan

IPC分类号： H01L21/18 ,  H01L21/28 ,  H01L21/338 ,  H01L29/41 ,  H01L29/812

CPC分类号： H01L29/66416 ,  H01L21/187 ,  H01L29/42316 ,  H01L29/47 ,  H01L29/66424 ,  H01L29/7391 ,  H01L29/7722 ,  Y10S148/012

摘要： A semiconductor device (10) is formed by providing first and second semiconductor bodies (1 and 11) each having first and second major surfaces (2 and 3) and (12 and 13), respectively, defining a rectifying junction pattern (21) adjacent to at least one (12) of the first major surfaces, and bonding the first major surfaces (2 and 12) together to join the two semiconductor bodies (1 and 11) to form the semiconductor device (10) in which the rectifying junction pattern 21 defines a path for the flow of charge carriers between the second major surfaces. The rectifying junction pattern (21) is defined at the one first major surface (12) by an electrically conductive pattern (20) forming a Schottky junction (21) with at least one of the first and second semiconductor bodies (1 and 11).

摘要翻译： 通过提供分别具有第一和第二主表面（2和3）以及（12和13）的第一和第二半导体本体（1和11）来形成半导体器件（10），所述半导体本体限定了相邻的整流结图案（21） 到第一主表面中的至少一个（12），并且将第一主表面（2和12）结合在一起以接合两个半导体本体（1和11）以形成半导体器件（10），其中整流结图案 21限定了用于第二主表面之间的电荷载体流动的路径。 整流结图案（21）通过与第一和第二半导体本体（1和11）中的至少一个形成肖特基结（21）的导电图案（20）限定在一个第一主表面（12）处。

公开(公告)号：EP0147893A1

公开(公告)日：1985-07-10

申请号：EP84201865.7

申请日：1984-12-14

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Shannon, John Martin ,  Slatter, John Alfred George ,  Coe, David James

IPC分类号： H01L29/91 ,  H01L29/06

CPC分类号： H01L29/7813 ,  H01L29/0619 ,  H01L29/402 ,  H01L29/407 ,  H01L29/408 ,  H01L29/8618 ,  H01L29/872

摘要： Separate areas of an active unipolar barrier (3), e. g. a Schottky barrier, of a semiconductor device are located between closely-spaced field-relief regions (4) which provide the device with an improved voltage blocking characteristic. The flow of minority carriers into the adjacent body portion (2) under forward bias is restricted by providing, at least at the areas of the field-relief regions (4), a layer (14) of different material from that of the body portion (2) and from that of the unipolar barrier-forming means (11). The layer (14) of different material may form a high-impedance electrical connection with the field-relief regions 4, and/or it may form with the body portion a heterojunction such as, for example, a Schottky barrier of higher barrier height, a barrier between different band gap materials or a MIS structure, which heterojunction forms part of the field-relief regions (4).

公开(公告)号：EP0426252B1

公开(公告)日：1994-08-24

申请号：EP90202862.0

申请日：1990-10-29

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Slatter, John Alfred George ,  Brockman, Henry Edward ,  Yule, David Caldecott

IPC分类号： H01L29/06 ,  H01L21/18

CPC分类号： H01L29/8611 ,  H01L29/0619 ,  H01L29/7302 ,  H01L29/868

公开(公告)号：EP0425037A3

公开(公告)日：1991-09-11

申请号：EP90202803.4

申请日：1990-10-19

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Slatter, John Alfred George ,  Brockman, Henry Edward ,  Haisma, Jan

IPC分类号： H01L21/18 ,  H01L21/28 ,  H01L21/338 ,  H01L29/41 ,  H01L29/812

CPC分类号： H01L29/66416 ,  H01L21/187 ,  H01L29/42316 ,  H01L29/47 ,  H01L29/66424 ,  H01L29/7391 ,  H01L29/7722 ,  Y10S148/012

摘要： A semiconductor device (10) is formed by providing first and second semiconductor bodies (1 and 11) each having first and second major surfaces (2 and 3) and (12 and 13), respectively, defining a rectifying junction pattern (21) adjacent to at least one (12) of the first major surfaces, and bonding the first major surfaces (2 and 12) together to join the two semiconductor bodies (1 and 11) to form the semiconductor device (10) in which the rectifying junction pattern 21 defines a path for the flow of charge carriers between the second major surfaces. The rectifying junction pattern (21) is defined at the one first major surface (12) by an electrically conductive pattern (20) forming a Schottky junction (21) with at least one of the first and second semiconductor bodies (1 and 11).

公开(公告)号：EP0280368A3

公开(公告)日：1990-08-08

申请号：EP88200297.5

申请日：1988-02-19

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Whight, Kenneth Ronald ,  Slatter, John Alfred George ,  Coe, David James

IPC分类号： H01L31/10 ,  H01L29/60

CPC分类号： H01L31/103 ,  H01L31/1105

摘要： A photosensitive device comprises a semiconductor body (1) having a first region (2) of one conductivity type adjacent a given surface (3) of the body with a second region (4) of the opposite conductivity type surrounding the first region (2) so as to form with the first region a main pn junction (5) terminating at the given surface (3), the main pn junction (5) being reverse-biassed in operation of the device. One or more further regions (6) of the one conductivity type surround the main pn junction (5) adjacent the given surface (3) so that the or each further region (6) forms a photosensitive pn junction (17) with the second region (4), the further region(s) (6) lying within the spread of the depletion region of the main pn junction (5) when the main pn junction (5) is reverse-biassed in operation of the device so as to increase the breakdown voltage of the main pn junction (5), and means are provided for transmitting light into the semiconductor body via the given surface to enable photogeneration of charge carriers in the vicinity of the photosensitive pn junction(s) (17). The further region(s) may comprise one or more annular floating regions (6ʺ) spaced apart from the main pn junction(s) and each other.

公开(公告)号：EP0280368B1

公开(公告)日：1994-06-01

申请号：EP88200297.5

申请日：1988-02-19

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Whight, Kenneth Ronald ,  Slatter, John Alfred George ,  Coe, David James

IPC分类号： H01L31/10 ,  H01L29/60

CPC分类号： H01L31/103 ,  H01L31/1105

公开(公告)号：EP0247660B1

公开(公告)日：1993-04-21

申请号：EP87200846.1

申请日：1987-05-11

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Paxman, David Henry ,  Slatter, John Alfred George ,  Coe, David James

IPC分类号： H01L27/06

CPC分类号： H01L29/7302 ,  H01L27/0716

公开(公告)号：EP0426252A3

公开(公告)日：1991-06-26

申请号：EP90202862.0

申请日：1990-10-29

申请人： PHILIPS ELECTRONICS UK LIMITED ,  Philips Electronics N.V.

发明人： Slatter, John Alfred George ,  Brockman, Henry Edward ,  Yule, David Caldecott

IPC分类号： H01L29/06 ,  H01L21/18

CPC分类号： H01L29/8611 ,  H01L29/0619 ,  H01L29/7302 ,  H01L29/868

摘要： A semiconductor body (100) has a first device region (20) of one conductivity type forming with a second device region (13) of the opposite conductivity type provided adjacent one major surfacee (11) of the semiconductor body (100) a first pn junction (40) which is reverse-biassed in at least one mode of operation. A floating further region (50) of the opposite conductivity type is provided within the first device region (20) remote from the major surfaces (11 and 12) of the semiconductor body (100) and spaced from the second device region (13) so that, in the one mode, the depletion region of the first pn junction (40) reaches the floating further region (50) before the first pn junction (40) breaks down. The floating further region (50) forms a further pn junction (51) with a highly doped capping region (60) of the one conductivity type which is provided within the first device region (20) between the floating further region (50) and the second device region (13) and spaced from the second device region (13) and which enables a high electric field to exist between the first pn junction (40) and the further floating region (50) with less risk of the device breaking down.