公开(公告)号：EP2062849B1

公开(公告)日：2016-01-27

申请号：EP08169504.1

申请日：2008-11-20

申请人： Palo Alto Research Center Incorporated

发明人： Shrader, Eric J. ,  Srinivasan, Uma ,  Crawford, Clark W. ,  Limb, Scott J.

IPC分类号： B81C1/00 ,  H05K3/00

CPC分类号： G03F7/2018 ,  H05K3/0079 ,  H05K3/108 ,  H05K3/184 ,  H05K2203/013 ,  H05K2203/0577 ,  H05K2203/0588

公开(公告)号：EP2062849A3

公开(公告)日：2009-11-11

申请号：EP08169504.1

申请日：2008-11-20

申请人： Palo Alto Research Center Incorporated

发明人： Shrader, Eric J. ,  Srinivasan, Uma ,  Crawford, Clark W. ,  Limb, Scott J.

IPC分类号： B81C1/00 ,  H05K3/00

CPC分类号： G03F7/2018 ,  H05K3/0079 ,  H05K3/108 ,  H05K3/184 ,  H05K2203/013 ,  H05K2203/0577 ,  H05K2203/0588

摘要： High aspect ratio structures can be obtained by print-patterning masking features in feature stacks such that each feature has a lateral edge which is aligned in a plane roughly perpendicular to the plane of the substrate on which the features are formed. Due to the differential lateral spreading between features formed on a substrate and formed atop other features, the print head is indexed less than the radius of a droplet to a position where a droplet ejected by the print head forms an upper feature atop a lower feature such that the lateral edges of the upper and lower features are aligned in the plane roughly perpendicular to the plane of the substrate. Feature stacks of two or more features may provide a vertical (or re-entrant) sidewall mask for formation of high aspect ratio structures, by e.g., electroplating, etc.

公开(公告)号：EP2062849A2

公开(公告)日：2009-05-27

申请号：EP08169504.1

申请日：2008-11-20

申请人： Palo Alto Research Center Incorporated

发明人： Shrader, Eric J. ,  Srinivasan, Uma ,  Crawford, Clark W. ,  Limb, Scott J.

IPC分类号： B81C1/00 ,  H05K3/00

CPC分类号： G03F7/2018 ,  H05K3/0079 ,  H05K3/108 ,  H05K3/184 ,  H05K2203/013 ,  H05K2203/0577 ,  H05K2203/0588

摘要： High aspect ratio structures can be obtained by print-patterning masking features in feature stacks such that each feature has a lateral edge which is aligned in a plane roughly perpendicular to the plane of the substrate on which the features are formed. Due to the differential lateral spreading between features formed on a substrate and formed atop other features, the print head is indexed less than the radius of a droplet to a position where a droplet ejected by the print head forms an upper feature atop a lower feature such that the lateral edges of the upper and lower features are aligned in the plane roughly perpendicular to the plane of the substrate. Feature stacks of two or more features may provide a vertical (or re-entrant) sidewall mask for formation of high aspect ratio structures, by e.g., electroplating, etc.

摘要翻译： 可以通过在特征堆叠中的印刷图案化掩模特征来获得高纵横比结构，使得每个特征具有在大致垂直于其上形成有特征的基底的平面的平面中对准的横向边缘。 由于形成在基板上并形成在其它特征上的特征之间的差分横向扩展，打印头被折射小于液滴的半径到由打印头喷射的液滴在下部特征顶部形成上部特征的位置，例如 上和下特征的侧边缘在大致垂直于基板的平面的平面中对齐。 两个或多个特征的特征堆叠可以提供用于形成高纵横比结构的垂直（或重入）侧壁掩模，例如通过电镀等。