公开(公告)号：EP4214750A1

公开(公告)日：2023-07-26

申请号：EP21758907.6

申请日：2021-07-30

申请人： QUALCOMM INCORPORATED

发明人： SONG, Stanley Seungchul ,  SHARMA, Deepak ,  CHAVA, Bharani ,  LIM, Hyeokjin ,  FENG, Peijie ,  KANG, Seung Hyuk ,  KIM, Jonghae ,  CHIDAMBARAM, Periannan ,  RIM, Kern ,  NALLAPATI, Giridhar ,  BOYNAPALLI, Venugopal ,  VANG, Foua

IPC分类号： H01L23/528 ,  H01L23/535 ,  H01L21/8238 ,  H01L23/48

公开(公告)号：EP3311225A1

公开(公告)日：2018-04-25

申请号：EP16732178.5

申请日：2016-06-15

申请人： Qualcomm Incorporated

发明人： CHEN, Xiangdong ,  LIM, Hyeokjin Bruce ,  KWON, Ohsang ,  MALABRY, Mickael ,  ZHANG, Jingwei ,  STEPHANY, Raymond George ,  YANG, Haining ,  RIM, Kern ,  SONG, Stanley Seungchul ,  GUPTA, Mukul ,  VANG, Foua

IPC分类号： G03F7/20 ,  G03F1/00 ,  G06F17/50

CPC分类号： G03F1/70 ,  G03F7/70433 ,  G03F7/70466 ,  G06F17/5068

摘要： In an aspect of the disclosure, a method, a computer-readable medium, and an apparatus for assigning feature colors for a multiple patterning process are provided. The apparatus receives integrated circuit layout information including a set of features and an assigned color of a plurality of colors for each feature of a first subset of features of the set of features. In addition, the apparatus performs color decomposition on a second subset of features to assign colors to features in the second subset of features. The second subset of features includes features in the set of features that are not included in the first subset of features with an assigned color.

公开(公告)号：EP3114708A1

公开(公告)日：2017-01-11

申请号：EP15707848.6

申请日：2015-02-19

申请人： Qualcomm Incorporated

发明人： CHEN, Xiangdong ,  KWON, Ohsang ,  VANG, Foua ,  DATTA, Animesh ,  RASOULI, Seid Hadi

IPC分类号： H01L27/02 ,  H01L21/8234 ,  H01L27/088 ,  H01L27/118

CPC分类号： H01L27/0207 ,  H01L21/76895 ,  H01L21/823412 ,  H01L21/823437 ,  H01L21/823475 ,  H01L21/823481 ,  H01L27/088 ,  H01L27/11807 ,  H01L2027/11831 ,  H01L2027/11861 ,  H01L2027/11866

摘要： A transistor cell is provided that includes a continuous oxide definition (OD) region defined in a substrate; a gate (450) for a transistor between a first dummy gate (425) and a second dummy gate (430), wherein a source for the transistor is defined in a first portion of the OD region between the gate and the first dummy gate, and wherein a drain for the transistor is defined in a second portion of the OD region between the gate and a first side of the second dummy gate; a first gate-directed local interconnect (470) and a first diffusion- directed local interconnect (440) couple a third portion of the OD region adjacent a second opposing side of the second dummy gate and the second dummy gate to a source voltage.

摘要翻译： 提供晶体管单元，其包括覆盖连续氧化物定义（OD）区域的虚拟栅极。 与虚设的第一侧相邻的OD区域的第一部分形成漏极。 单元包括局部互连结构，其将虚拟栅极和邻近伪栅极的第二相对侧的OD区域的一部分耦合到源极电压。

公开(公告)号：EP4211798A1

公开(公告)日：2023-07-19

申请号：EP21790658.5

申请日：2021-09-02

申请人： QUALCOMM INCORPORATED

发明人： SAMSON, Giby ,  VANG, Foua ,  VILANGUDIPITCHAI, Ramaprasath ,  KANG, Seung Hyuk ,  BOYNAPALLI, Venugopal

IPC分类号： H03K17/06 ,  H03K17/14 ,  G06F1/3287 ,  H03K19/00

公开(公告)号：EP3311225B1

公开(公告)日：2019-05-22

申请号：EP16732178.5

申请日：2016-06-15

申请人： Qualcomm Incorporated

发明人： CHEN, Xiangdong ,  LIM, Hyeokjin Bruce ,  KWON, Ohsang ,  MALABRY, Mickael ,  ZHANG, Jingwei ,  STEPHANY, Raymond George ,  YANG, Haining ,  RIM, Kern ,  SONG, Stanley Seungchul ,  GUPTA, Mukul ,  VANG, Foua

IPC分类号： G03F7/20 ,  G03F1/00 ,  G06F17/50

公开(公告)号：EP3105782B1

公开(公告)日：2018-08-01

申请号：EP15702602.2

申请日：2015-01-08

申请人： Qualcomm Incorporated

发明人： SONG, Stanley Seungchul ,  WANG, Zhongze ,  KWON, Ohsang ,  RIM, Kern ,  ZHU, John Jianhong ,  CHEN, Xiangdong ,  VANG, Foua ,  STEPHANY, Raymond George ,  YEAP, Choh Fei

IPC分类号： H01L21/768 ,  H01L23/485 ,  H01L23/522

CPC分类号： H01L23/5283 ,  H01L21/76831 ,  H01L21/76877 ,  H01L21/76895 ,  H01L21/76897 ,  H01L23/485 ,  H01L23/5226 ,  H01L27/088 ,  H01L29/41775 ,  H01L29/42312 ,  H01L2027/11866 ,  H01L2924/0002 ,  H01L2924/00

摘要： A semiconductor device includes a gate and a first active contact adjacent to the gate. Such a device further includes a first stacked contact electrically coupled to the first active contact, including a first isolation layer on sidewalls electrically isolating the first stacked contact from the gate. The device also includes a first via electrically coupled to the gate and landing on the first stacked contact. The first via electrically couples the first stacked contact and the first active contact to the gate to ground the gate.

公开(公告)号：EP4226422A2

公开(公告)日：2023-08-16

申请号：EP21831386.4

申请日：2021-07-28

申请人： QUALCOMM INCORPORATED

发明人： LIM, Hyeokjin ,  BOYNAPALLI, Venugopal ,  VANG, Foua ,  KANG, Seung Hyuk

IPC分类号： H01L27/02 ,  G06F30/394 ,  H01L27/118

公开(公告)号：EP4222781A1

公开(公告)日：2023-08-09

申请号：EP21762204.2

申请日：2021-08-02

申请人： QUALCOMM INCORPORATED

发明人： LIM, Hyeokjin ,  SONG, Stanley Seungchul ,  VANG, Foua ,  KANG, Seung Hyuk

IPC分类号： H01L23/48 ,  H01L23/528 ,  H01L27/105

公开(公告)号：EP3685437A1

公开(公告)日：2020-07-29

申请号：EP18769004.5

申请日：2018-08-27

申请人： Qualcomm Incorporated

发明人： HIREMATH, Renukprasad ,  LIM, Hyeokjin ,  VANG, Foua ,  CHEN, Xiangdong ,  BOYNAPALLI, Venugopal

IPC分类号： H01L27/02 ,  H01L23/528

公开(公告)号：EP2664001B1

公开(公告)日：2015-09-16

申请号：EP12702653.2

申请日：2012-01-11

申请人： Qualcomm Incorporated

发明人： CHIDAMBARAM, Pr ,  PATEL, Prayag B. ,  VANG, Foua ,  KAMAL, Pratyush ,  GAN, Chock H. ,  SWAMYNATHAN, Chethan

IPC分类号： H01L27/02 ,  G06F17/50 ,  H01L21/033 ,  H01L27/118

CPC分类号： H01L27/0207 ,  H01L27/11807