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    DIFFERENTIAL CRYSTAL OSCILLATOR CIRCUIT
    2.
    发明公开
    DIFFERENTIAL CRYSTAL OSCILLATOR CIRCUIT 审中-公开
    差分晶体振荡器电路

    公开(公告)号：EP3172835A1

    公开(公告)日：2017-05-31

    申请号：EP15732148.0

    申请日：2015-06-16

    申请人： Qualcomm Incorporated

    发明人： RAJAVI, Yashar ,  KAVOUSIAN, Amirpouya ,  KHALILI, Alireza ,  VAHID FAR, Mohammad Bagher ,  KOMIJANI, Abbas

    IPC分类号： H03B5/36 ,  H03B5/06

    CPC分类号： H03B5/364 ,  H03B5/06 ,  H03B5/36 ,  H03B2200/004 ,  H03B2200/0094

    摘要： A differential crystal oscillator circuit, including: first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, each MOSFET diode including a resistor connected between gate and drain terminals, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency.

    摘要翻译： 一种差分晶体振荡器电路，包括：第一和第二输出端; 交叉耦合振荡单元，其包括交叉耦合到第一和第二输出端子的第一和第二晶体管; 第一和第二金属氧化物半导体场效应晶体管（MOSFET）二极管，每个MOSFET二极管包括连接在栅极和漏极端子之间的电阻器，其中第一MOSFET二极管耦合到第一晶体管以在低频和高频下提供低阻抗负载 - 向所述第一晶体管施加较高频率的阻抗负载，其中所述第二MOSFET二极管耦合到所述第二晶体管，以向所述第二晶体管提供低频下的低阻抗负载和更高频率下的高阻抗负载; 以及耦合在第一和第二输出端之间以建立振荡频率的参考谐振器。

    POWER-EFFICIENT, LOW-NOISE, AND PROCESS/VOLTAGE/TEMPERATURE (PVT)-INSENSITIVE REGULATOR FOR A VOLTAGE-CONTROLLED OSCILLATOR (VCO)
    3.
    发明公开
    POWER-EFFICIENT, LOW-NOISE, AND PROCESS/VOLTAGE/TEMPERATURE (PVT)-INSENSITIVE REGULATOR FOR A VOLTAGE-CONTROLLED OSCILLATOR (VCO) 审中-公开

    公开(公告)号：EP3796124A1

    公开(公告)日：2021-03-24

    申请号：EP20207527.1

    申请日：2015-03-11

    申请人： QUALCOMM Incorporated

    发明人： VAHID FAR, Mohammad Bagher ,  KOMIJANI, Abbas ,  PARK, Chan Hong

    IPC分类号： G05F3/26 ,  G05F1/575 ,  G05F1/595

    摘要： Certain aspects of the present disclosure provide voltage regulating circuits which are power efficient, low noise, and substantially insensitive to changes in process technology, power supply voltage, and temperature. Such circuits may be used to provide the regulated voltage for a voltage-controlled oscillator (VCO), for example, as found in a radio frequency front end (RFFE). One example voltage regulating circuit generally includes a current source configured to supply or sink a reference current and a current mirror having a bias branch and a main branch, wherein the bias branch is connected with the current source, wherein the main branch includes a source follower to provide the regulated voltage, and wherein the reference current is available at a node for the regulated voltage.

    DIFFERENTIAL CRYSTAL OSCILLATOR CIRCUIT
    4.
    发明授权
    DIFFERENTIAL CRYSTAL OSCILLATOR CIRCUIT 有权

    公开(公告)号：EP3172835B1

    公开(公告)日：2018-10-17

    申请号：EP15732148.0

    申请日：2015-06-16

    申请人： Qualcomm Incorporated

    发明人： RAJAVI, Yashar ,  KAVOUSIAN, Amirpouya ,  KHALILI, Alireza ,  VAHID FAR, Mohammad Bagher ,  KOMIJANI, Abbas

    IPC分类号： H03B5/36 ,  H03B5/06

    CPC分类号： H03B5/364 ,  H03B5/06 ,  H03B5/36 ,  H03B2200/004 ,  H03B2200/0094

    摘要： A differential crystal oscillator circuit, including: first and second output terminals; a cross-coupled oscillation unit including first and second transistors cross-coupled to the first and second output terminals; first and second metal-oxide semiconductor field-effect transistor (MOSFET) diodes, each MOSFET diode including a resistor connected between gate and drain terminals, wherein the first MOSFET diode couples to the first transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the first transistor, wherein the second MOSFET diode couples to the second transistor to provide low-impedance load at low frequencies and high-impedance load at higher frequencies to the second transistor; and a reference resonator coupled between the first and second output terminals to establish an oscillation frequency.

    ARCHITECTURE TO REJECT NEAR END BLOCKERS AND TRANSMIT LEAKAGE
    5.
    发明公开
    ARCHITECTURE TO REJECT NEAR END BLOCKERS AND TRANSMIT LEAKAGE 有权
    抵制近端阻塞和传输泄漏的架构

    公开(公告)号：EP3170263A1

    公开(公告)日：2017-05-24

    申请号：EP15739371.1

    申请日：2015-06-17

    申请人： Qualcomm Incorporated

    发明人： VAHID FAR, Mohammad Bagher ,  WANG, Cheng-Han ,  RICHMOND, Jesse Aaron ,  NGUYEN, Thinh Cat ,  KOMIJANI, Abbas ,  RAJAVI, Yashar ,  KHALILI, Alireza

    IPC分类号： H04B1/10 ,  H03H11/04 ,  H03H11/12 ,  H04B1/525

    CPC分类号： H03H11/0433 ,  H03H11/1252 ,  H04B1/109 ,  H04B1/525

    摘要： A method and apparatus for minimizing transmit signal interference is provided. The method includes the steps of: receiving a signal and amplifying the received signal. The received signal is then mixed with an intermediate frequency signal to obtain a baseband modulated signal. The baseband modulated signal is first filtered in an RC filter. The resulting signal is then divided by a preselected amount and the first divided portion is sent to a main path of a biquad filter, which produces a first stage biquad filtered signal. The second portion of the divided signal is sent to an auxiliary path of the biquad filter, and produces a second filtered signal. The first and second signals are then recombined and sent to the second stage of the biquad filter, where further filtering takes place.

    摘要翻译： 提供了一种用于最小化发射信号干扰的方法和设备。 该方法包括以下步骤：接收信号并放大接收到的信号。 接收到的信号然后与中频信号混合以获得基带调制信号。 基带调制信号首先在RC滤波器中进行滤波。 然后将得到的信号除以预选的量，并将第一分频部分发送到双二阶滤波器的主路径，其产生第一级双二阶滤波信号。 分频信号的第二部分被发送到双二阶滤波器的辅助路径，并产生第二滤波信号。 然后将第一和第二信号重新组合并发送到双二阶滤波器的第二阶段，在那里进行进一步滤波。

    POWER-EFFICIENT, LOW-NOISE, AND PROCESS/VOLTAGE/TEMPERATURE (PVT)-INSENSITIVE REGULATOR FOR A VOLTAGE-CONTROLLED OSCILLATOR (VCO)
    6.
    发明公开
    POWER-EFFICIENT, LOW-NOISE, AND PROCESS/VOLTAGE/TEMPERATURE (PVT)-INSENSITIVE REGULATOR FOR A VOLTAGE-CONTROLLED OSCILLATOR (VCO) 审中-公开
    功率高效的，低噪音，AGAINST PROCESS /电压/温度（PVT）用于电压控制振荡器不敏感的调节器（VCO）

    公开(公告)号：EP3126924A1

    公开(公告)日：2017-02-08

    申请号：EP15712482.7

    申请日：2015-03-11

    申请人： Qualcomm Incorporated

    发明人： VAHID FAR, Mohammad Bagher ,  KOMIJANI, Abbas ,  PARK, Chan Hong

    IPC分类号： G05F3/26

    CPC分类号： G05F3/02 ,  G05F3/262

    摘要： Certain aspects of the present disclosure provide voltage regulating circuits which are power efficient, low noise, and substantially insensitive to changes in process technology, power supply voltage, and temperature. Such circuits may be used to provide the regulated voltage for a voltage-controlled oscillator (VCO), for example, as found in a radio frequency front end (RFFE). One example voltage regulating circuit generally includes a current source configured to supply or sink a reference current and a current mirror having a bias branch and a main branch, wherein the bias branch is connected with the current source, wherein the main branch includes a source follower to provide the regulated voltage, and wherein the reference current is available at a node for the regulated voltage.

    摘要翻译： 本公开的某些方面提供了电压调节电路哪些是功率效率，低噪音，和基本上不敏感在工艺技术，电源电压和温度变化。 搜索电路可被用来提供一电压控制振荡器（VCO）的调节后的电压，例如，如在射频前端（RFFE）找到。 一个实施例的电压调节电路基因集会包括配置以供应或吸收的基准电流和具有偏压分支和主分支，worin偏置分支与所述电流源相连，worin主分支的电流镜的电流源包括源极跟随器 以提供经调节的电压，并且worin参考电流可在用于调节电压的节点。