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1.
公开(公告)号:EP2576429A2
公开(公告)日:2013-04-10
申请号:EP11714281.0
申请日:2011-04-13
申请人: Robert Bosch GmbH
发明人: GONSKA, Julian , SCHLOSSER, Roman , FREY, Jens , WEBER, Heribert , GRAF, Eckhard
IPC分类号: B81C1/00
CPC分类号: H01L23/481 , B81B2203/033 , B81B2207/095 , B81C1/00095 , H01L21/76837 , H01L23/04 , H01L2224/48463 , H01L2924/1461 , H01L2924/00
摘要: An advantageous possibility for realizing electrically very reliable and mechanically extremely stable vias in components is proposed, the functionality of which is realized in a layer construction on a conductive substrate (100). The via (Vertical Interconnect Access) (3) led onto the component rear side and serving for making electrical contact with functional elements (18) realized in the layer construction comprises a connection region in the substrate (100), which connection region extends over the entire substrate thickness and is electrically insulated from the adjoining substrate (100) by a trench-type insulation frame (2) likewise extending over the entire substrate thickness. According to the invention, the trench-type insulation frame (2) is filled with an electrically insulating polymer (21).
摘要翻译: 用于实现电非常可靠和非常稳定的机械导通孔为组件上,其功能在上的导电基片的层构造实现的有利的方法和系统。 其用于在层结构实现的功能元件的电接触通过(垂直互连接入),所有这一切都被引导到该组件的后侧和所有包括在所述基板的连接区域没有延伸过的整个厚度 底物和电从相邻基板通过沟槽状的绝缘框在整个基片厚度同样地扩展绝缘。 。根据本发明的系统中,沟槽状的绝缘框架与在电绝缘聚合物填充。
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2.
公开(公告)号:EP2438005A2
公开(公告)日:2012-04-11
申请号:EP10715188.8
申请日:2010-04-07
申请人: Robert Bosch GmbH
发明人: GONSKA, Julian , WEBER, Heribert
IPC分类号: B81C1/00
CPC分类号: B81C1/00269 , B81B7/0029 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , Y10T428/24802
摘要: The present invention relates to a method for producing a micromechanical component. The method comprises: providing a first substrate (100), providing a second substrate (200), forming a protruding structural element (240) on the second substrate (200), and connecting the first and second substrates (100, 200) by way of the protruding structural element (240). The method is characterized in that the connection of the first and second substrates (100, 200) is carried out by eutectic bonding. The invention further relates to a micromechanical component, wherein a first and a second substrate (100, 200) are interconnected.
摘要翻译: 描述了一种方法用于制造微机械部件。 该方法包括:提供第一基材,提供第二基材,在所述第二基板显影图案化的凸起元件,并且经由投射图案化的元件连接所述第一基板和第二基板。 该方法提供所做的第一基板和第二基板的所述连接包括共晶接合。 如此描述是微机械部件,其中第一和第二基片被连接到海誓山盟。
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公开(公告)号:EP1935009A1
公开(公告)日:2008-06-25
申请号:EP06806773.5
申请日:2006-09-18
申请人: ROBERT BOSCH GMBH
发明人: BENZEL, Hubert , PINTER, Stefan , SCHELLING, Christoph , PIRK, Tjalf , GONSKA, Julian , KLOPF, Frank , LEINENBACH, Christina
IPC分类号: H01L21/306 , H01L21/3213
CPC分类号: H01L21/3065 , B81C1/00531 , B81C2201/0135 , H01L21/26506 , H01L21/266 , H01L21/32135 , H01L21/78
摘要: The invention relates to a method for the plasma free etching of silicon with an etching gas ClF3 (15) or XeF2 and to the use thereof. The silicon comprises one or several areas (20) which are to be etched, as a layer on a substrate (1) or as a substrate material. The silicon is transformed into a mixing semiconductor SiGe (40) by introducing germanium (30, 35) and is etched by supplying etching gas ClF3 (15) or XeF2. The germanium (30, 35) is introduced and the etching gas ClF3 (15) or XeF2 is supplied in a temporally parallel or alternating manner. The invention relates to, in particular, the introduction of germanium (30, 35) by implanting germanium-ions (35) into the silicon.
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公开(公告)号:EP2576429B1
公开(公告)日:2017-06-14
申请号:EP11714281.0
申请日:2011-04-13
申请人: Robert Bosch GmbH
发明人: GONSKA, Julian , SCHLOSSER, Roman , FREY, Jens , WEBER, Heribert , GRAF, Eckhard
IPC分类号: B81C1/00
CPC分类号: H01L23/481 , B81B2203/033 , B81B2207/095 , B81C1/00095 , H01L21/76837 , H01L23/04 , H01L2224/48463 , H01L2924/1461 , H01L2924/00
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5.
公开(公告)号:EP2438005B1
公开(公告)日:2015-06-10
申请号:EP10715188.8
申请日:2010-04-07
申请人: Robert Bosch GmbH
发明人: GONSKA, Julian , WEBER, Heribert
IPC分类号: B81C1/00
CPC分类号: B81C1/00269 , B81B7/0029 , B81C2203/0118 , B81C2203/019 , B81C2203/035 , Y10T428/24802
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