摘要:
The invention relates to a micro heating plate device having a membrane support unit (10), a membrane (12), which at least partially spans at least one cavity (14) formed in the membrane support unit (10), and having at least one heating line (16) arranged on and/or in the membrane (12). In addition, the micro heating plate device comprises at least one reflector element (18) arranged on the inner side (12a) of the membrane (12) oriented toward the cavity (14) such that by means of the at least one reflector element (18), a heat radiation emitted by the at least one heating line (16) and/or the membrane can be reflected back onto and/or into the membrane (12), at least partially. The invention further relates to a sensor having a micro heating plate device.
摘要:
The invention relates to a micromechanical sensor device and a corresponding production method. The micromechanical sensor device comprises a substrate (1) having a front (VS) and a rear (RS), a plurality of pillars (S1, S2) being formed on the front (V) of the substrate (1). On each pillar a respective sensor element (P1, P2) is formed, which has a greater lateral extent than the associated pillar (S1, S2), a cavity (H) being provided laterally to the pillars (S1, S2) beneath the sensor elements (P1, P2). The sensor elements (P1, P2) are laterally spaced apart from each other by means of respective separating troughs (G1, G2) and make electrical contact with a respective associated rear contact (V6, E1; V7, E1) via the respective associated pillar (S1, S2).
摘要:
Disclosed is a micromechanical sensor element (1) comprising a closed membrane (2) which is mounted within a frame (3). Said sensor element (1) is very sensitive and compact while being provided with great resistance to overload and allowing measured values to be detected in a piezoresistive manner. For this purpose, at least one support element (4) that is joined to the frame (3) via at least one connecting web (5) is embodied in the area of the membrane (2). Furthermore, piezo resistors (6) are disposed in the area of the connecting web (5) so as to detect a deformation.
摘要:
The present invention proposes a method for the production of a component (10), comprising at least one membrane (11) configured in the component surface, the membrane spanning a cavern (12), and further comprising at least one access opening (14) to the cavern (12) coming from the component rear, wherein at least one first membrane layer (2) and the cavern (12) are created in a monolithic semiconductor substrate (1) starting from the component surface, and wherein the access opening (14) starting from the substrate rear is created in a chronologically limited etching process. For this purpose, according to the invention the access opening (14) is disposed in a region in which the substrate material reaches the first membrane layer (2). Further, the etching process comprises at least one anisotropic etching step and at least one isotropic etching step for creating the access opening (14), wherein an etching channel (15) is created starting at the substrate rear in the anisotropic etching step, the channel ending beneath the first membrane layer (2) in the surrounding region of the cavern (12), and wherein at least the and region (16) of this etching channel (15) is widened in the isotropic etching step, until the etching channel (15) is connected to the cavern.
摘要:
A method is proposed for production of a micromechanical component, with the component (10) being intended to have a membrane (11), a stationary plate (7) with at least one through-opening (9) through it and a cavity (12) between the membrane (11) and the plate (7). The membrane (11) is formed by a layer structure (2) on a substrate (1), and the plate (7) is structured from the substrate (1), with a cavern (6) being produced in the substrate (1) from the rear face of the component (10). The method according to the invention can be implemented easily and allows precise structuring of the openings (9) through the plate (7) independently of any openings through the membrane (11). For this purpose, at least the base of the cavern (6) which forms the rear face of the plate (7) is provided with at least one masking layer (8), which is structured in order to produce the at least one through-opening (9) through it. The substrate material is then removed in the area of the through-opening (9) through it, from the rear face of the plate (7).
摘要:
The invention relates to a method for the plasma free etching of silicon with an etching gas ClF3 (15) or XeF2 and to the use thereof. The silicon comprises one or several areas (20) which are to be etched, as a layer on a substrate (1) or as a substrate material. The silicon is transformed into a mixing semiconductor SiGe (40) by introducing germanium (30, 35) and is etched by supplying etching gas ClF3 (15) or XeF2. The germanium (30, 35) is introduced and the etching gas ClF3 (15) or XeF2 is supplied in a temporally parallel or alternating manner. The invention relates to, in particular, the introduction of germanium (30, 35) by implanting germanium-ions (35) into the silicon.