公开(公告)号：EP2301038A1

公开(公告)日：2011-03-30

申请号：EP09730954.6

申请日：2009-04-09

Applicant: Rambus Inc.

Inventor： ONG, Adrian, E. ,  HO, Fan

IPC: G11C29/00

CPC classification number: G11C29/76 ,  G11C11/401 ,  G11C11/4085 ,  G11C29/027 ,  G11C29/04 ,  G11C29/12 ,  G11C29/4401 ,  G11C29/48 ,  G11C29/78 ,  G11C29/789 ,  G11C29/802 ,  G11C2229/743

Abstract: The present disclosure provides semiconductor devices and methods, systems, and apparatus for testing and operating the same. A semiconductor memory device includes data storage elements and a repair circuit. The data storage elements include primary data storage elements and one or more redundant data storage elements, the primary data storage elements having respective addresses for memory access operations. The repair circuit is programmable by another semiconductor device separate from the memory device to recognize a malfunctioning address of the primary data storage elements and the programmed repair circuit is configured to reroute memory access from a primary data storage element having the recognized malfunctioning address to a corresponding redundant data storage element.

Abstract translation: 本公开提供了用于测试和操作该半导体器件的方法，系统和装置。 半导体存储器件包括数据存储元件和修复电路。 数据存储元件包括主数据存储元件和一个或多个冗余数据存储元件，主数据存储元件具有用于存储器访问操作的相应地址。 修复电路可以由与存储器件分离的另一个半导体器件编程，以识别主数据存储元件的故障地址，并且编程的修复电路被配置为将具有识别的故障地址的主数据存储元件的存储器访问重新路由到相应的 冗余数据存储元件。