摘要:
To provide a magnetic element which can generate a skyrmion, and a skyrmion memory which applies the magnetic element or the like. To provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having a β-Mn type crystal structure. Also, to provide a magnetic element with a chiral magnet for generating a skyrmion, the chiral magnet is made of a magnetic material having an Au 4 Al type crystal structure.
摘要:
The present invention relates to a compound containing at least germanium, tellurium, bismuth and copper as constituent elements, wherein the longest axis of ubiquitous bismuth crystals and copper crystals is less than 2.0 µm.
摘要:
Provided is a magnetic element capable of generating one skyrmion and erasing the one skyrmion. The magnetic element includes a magnet shaped like a substantially rectangular flat plate, an upstream electrode connected to the magnet in a width Wm direction of the magnet and made of a non-magnetic metal, a downstream electrode connected to the magnet in the width Wm direction to oppose the upstream electrode and made of a non-magnetic metal, and a skyrmion sensor configured to detect the skyrmion. Here, a width Wm of the substantially rectangular magnet is such that 3·λ > Wm ≥ λ, where λ denotes a diameter of the skyrmion, a length Hm of the substantially rectangular magnet is such that 2·λ > Hm ≥ λ, and the magnet has a notch structure at an edge between the upstream electrode and the downstream electrode.
摘要:
Provided is a magnetic element, a skyrmion memory, and the like that have a nearly infinite endurance (durability) for the number of times data is written and nearly eternal data retention (holding) characteristics, and are capable of writing and erasing at ultra-high speed. For example, provided is a magnetic element capable of generating and erasing a skyrmion, including a magnet shaped as a thin layer and including a structure surrounded by a nonmagnetic material; a current path provided surrounding an end region including an end portion of the magnet, on one surface of the magnet; and a skyrmion sensor that detects the generation and erasing of the skyrmion. With Wm being a width of the magnet and hm being a height of the magnet, a size of the magnet, with the skyrmion of a diameter λ being generated, is such that 2λ > Wm > λ/2 and 2λ > hm > λ/2. With W being a width of the end region in a direction parallel to the end portion of the magnet and h being a height of the end region in a direction perpendicular to the end portion of the magnet, the end region is such that λ ≥ W > λ/4 and 2λ > h > λ/2.
摘要:
Provided is a skyrmion memory circuit capable of circularly transferring a magnetic element skyrmion, comprising one or more current paths in a magnet having a closed-path pattern that are provided surrounding an end region including an end portion of the magnet in a plane of the magnet with the closed-path pattern, and applying current between an outer terminal connected to an outer circumferential portion of the closed-path pattern and an inner circumference electrode connected to an inner circumferential portion of the closed-path pattern, transferring the skyrmion in a direction substantially perpendicular to the direction of the applied current, and circulating the skyrmion in the magnet with the closed-path pattern.
摘要:
To provide a magnetic element capable of performing skyrmion transfer, a skyrmion memory to which this magnetic element is applied, and a shift register, for example, a magnetic element capable of performing skyrmion transfer is provided, the magnetic element providing a transverse transfer arrangement in which the skyrmion is transferred substantially perpendicular to a current between an upstream electrode and a downstream electrode, and including a plurality of stable positions in which the skyrmion exists more stably than in other regions of a magnet, and a skyrmion sensor that detects a position of the skyrmion.
摘要:
The present invention relates to a compound containing at least germanium, tellurium, bismuth, copper, antimony and silver as constituent elements.
摘要:
Provided is a magnetic element which can generate a skyrmion by a stacked film including a magnetic layer and a non- magnetic layer, and a skyrmion memory to which the magnetic element is applied and the like. Provided is a magnetic element for generating a skyrmion, the magnetic element comprising a two-dimensional stacked film, wherein the two-dimensional stacked film is-at least one or more multiple layered films including a magnetic film and a non-magnetic film stacked on the magnetic film. Also, provided is a skyrmion memory including a plurality of the magnetic elements stacked in a thickness direction.