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11 条记录 (耗时 0.014 秒)

    Method of cleaning semiconductor wafers
    3.
    发明公开
    Method of cleaning semiconductor wafers 有权
    Verfahren zur Reinigung eines Halbleiter-Wafers

    公开(公告)号：EP2209134A2

    公开(公告)日：2010-07-21

    申请号：EP10150643.4

    申请日：2010-01-13

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Barr, Robert K. ,  Chan, Raymond ,  Moynihan, Matthew L.

    IPC分类号： H01L21/02 ,  H01L31/00

    CPC分类号： H01L21/02052

    摘要： A method of cleaning semiconductor wafers using an acid cleaner followed by an alkaline cleaner to clean contaminants from the materials is provided. The acid cleaner removes substantially all of the metal contaminants while the alkaline cleaner removes substantially all of the non-metal contaminants, such as organics and particulate material.

    摘要翻译： 提供了一种使用酸性清洁剂和碱性清洁剂清洁半导体晶片以清除材料中的污染物的方法。 酸性清洁剂基本上除去所有金属污染物，而碱性清洁剂基本上除去了所有非金属污染物，例如有机物和颗粒物质。

    Method of forming current tracks on semiconductors
    6.
    发明公开
    Method of forming current tracks on semiconductors 有权
    一种用于导线的形成过程中追踪在半导体上

    公开(公告)号：EP2388826A3

    公开(公告)日：2013-05-22

    申请号：EP11166305.0

    申请日：2011-05-17

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Barr, Robert K. ,  Dong, Hua

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  Y02E10/50

    摘要： Methods of making current tracks for semiconductors are disclosed. The methods involve selectively depositing a hot melt ink resist containing rosin resins and waxes on a silicon dioxide or silicon nitride layer coating a semiconductor followed by etching uncoated portions of the silicon dioxide or silicon nitride layer with an inorganic acid etch to expose the semiconductor and simultaneously inhibit undercutting of the hot melt ink resist. The etched portions may then be metallizaed to form a plurality of substantially uniform current tracks.

    Method of forming current tracks on semiconductors
    7.
    发明公开
    Method of forming current tracks on semiconductors 有权
    维尔法赫尔·祖尔·比尔登·冯·斯特罗米勒特巴赫南·哈利齐宁

    公开(公告)号：EP2388826A2

    公开(公告)日：2011-11-23

    申请号：EP11166305.0

    申请日：2011-05-17

    申请人： Rohm and Haas Electronic Materials LLC

    发明人： Barr, Robert K. ,  Dong, Hua

    IPC分类号： H01L31/0224 ,  H01L31/18

    CPC分类号： H01L31/18 ,  H01L31/022425 ,  Y02E10/50

    摘要： Methods of making current tracks for semiconductors are disclosed. The methods involve selectively depositing a hot melt ink resist containing rosin resins and waxes on a silicon dioxide or silicon nitride layer coating a semiconductor followed by etching uncoated portions of the silicon dioxide or silicon nitride layer with an inorganic acid etch to expose the semiconductor and simultaneously inhibit undercutting of the hot melt ink resist. The etched portions may then be metallizaed to form a plurality of substantially uniform current tracks.

    摘要翻译： 公开了制造半导体电流轨迹的方法。 所述方法包括在包含半导体的二氧化硅或氮化硅层上选择性地沉积含有松香树脂和蜡的热熔油墨抗蚀剂，然后用无机酸蚀刻蚀刻二氧化硅或氮化硅层的未涂覆部分以暴露半导体并同时 抑制热熔油墨抗蚀剂的底切。 然后蚀刻的部分可以被金属化以形成多个基本均匀的电流迹线。