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    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER
    1.
    发明公开
    METHOD OF MANUFACTURING A SEMICONDUCTOR STRUCTURE COMPRISING SIC ON AN OXIDE LAYER 审中-公开
    方法用于生产具有SIC的半导体结构的氧化物层上

    公开(公告)号：EP1417705A1

    公开(公告)日：2004-05-12

    申请号：EP02750135.2

    申请日：2002-07-17

    申请人： ROSEMOUNT AEROSPACE INC.

    发明人： ERIKSEN, Odd, Harald, Steen ,  GUO, Shuwen

    IPC分类号： H01L21/762 ,  H01L21/04 ,  H01L21/76 ,  G01L9/00

    CPC分类号： H01L21/76254 ,  H01L21/7602 ,  Y10S438/931

    摘要： A method of preparing a semiconductor structure comprises: (a) providing a first material comprising (i) a first wafer comprising silicon, (ii) at least one SiC conversion layer obtained by converting a portion of the silicon to SiC, (iii) at least one layer of non-indigenous SiC applied to the conversion layer, and (iv) at least one oxide layer applied to the non-indigenous SiC layer; (b) implanting ions in a region of the non-indigenous SiC layer, thereby establishing an implant region therein which defines a first portion of the non-indigenous SiC layer and a second portion of the non-indigenous SiC layer; (c) providing at least one additional material comprising (i) a second wafer comprising silicon, and (ii) an oxide layer applied to a face of the second wafer; (d) bonding the oxide layer of the first material and oxide layer of the material to provide an assembly of the first material and second material; and (e) separating at the implant region the second portion of the non-indigenous SiC layer from the first portion of the non-indigenous SiC layer to provide. The resultant semiconductor structure comprises a base wafer which may be a Si wafer, an insulating oxide layer which may be SiO2 adjacent to the base wafer, and an active top layer of non-indigenous SiC. The semiconductor structure may be used to fabricate integrated electronics, pressure sensors, temperature sensors or other instrumentation which may be used in high temperature environments such as aircraft engines.

    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR
    4.
    发明公开
    HIGH TEMPERATURE RESISTANT SOLID STATE PRESSURE SENSOR 审中-公开
    高温固固压力传感器

    公开(公告)号：EP2082204A2

    公开(公告)日：2009-07-29

    申请号：EP07853561.4

    申请日：2007-09-19

    申请人： Rosemount Aerospace Inc.

    发明人： GUO, Shuwen ,  ERIKSEN, Odd Harald, Steen ,  POTASEK, David, P. ,  CHILDRESS, Kimiko J.

    IPC分类号： G01L9/00

    CPC分类号： C23C14/021 ,  C23C14/022 ,  C23C14/025 ,  C23C14/0682 ,  C23C14/5806 ,  C23C14/5846 ,  C23C14/5873 ,  G01L9/0042 ,  G01L19/0061 ,  G01L19/0609 ,  G01L19/147 ,  H01L2224/48472

    摘要： A harsh environment transducer including: - a substrate (14) having a first surface and a second surface, the latter being exposed to the environment - a device layer sensor means (12) on the substrate (14) for measuring a parameter associated with the environment, including a single crystal semiconductor material having a thickness of less than about 0.5 microns - an output (50) contact on the substrate (14) and in electrical communication with the sensor means (12) - a package having an internal space communicating with the environment and receiving the substrate (14) such that its first surface is substantially isolated from the environment and its second surface is substantially exposed to the environment - a connecting component (22) coupled to the package - a wire (24) electrically connecting the connecting component (22) and the output contact (50) such that an output of the sensor means can be communicated. The external surface of the wire (24) and at least one of the output contact (50) and the connecting component (22) is substantially platinum.