公开(公告)号：EP0211634A3

公开(公告)日：1988-05-04

申请号：EP86305952

申请日：1986-08-01

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Suzuki, Kunio ,  Nagayama, Susumu ,  Inujima, Takashi ,  Abe, Masayoshi ,  Fukada, Takeshi ,  Kinka, Mikio ,  Kobayashi, Ippei ,  Shibata, Katsuhiko ,  Susukida, Masato ,  Koyanagi, Kaoru

IPC分类号： H01L31/18 ,  H01L21/324

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

摘要： An improved semiconductor fabrication process is disclosed in accordance with which a semiconductor layer just formed by a plasma CVD method for example is subjected to light irradiation under conditions such as to encourage the development of dangling bonds in the surface microstructure of the semiconductor, and the dangling bonds thus formed are then neutralized by the formation of stable combinations between the dangling bonds and a neutralizing agent. The resulting semiconductor does not demonstrate the disadvantageous Staebler-Wronski effect and is advantageous in the fabrication of semiconductor photoelectric conversion devices.

公开(公告)号：EP0211634B1

公开(公告)日：1994-03-23

申请号：EP86305952.3

申请日：1986-08-01

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Suzuki, Kunio ,  Nagayama, Susumu ,  Inujima, Takashi ,  Abe, Masayoshi ,  Fukada, Takeshi ,  Kinka, Mikio ,  Kobayashi, Ippei ,  Shibata, Katsuhiko ,  Susukida, Masato ,  Koyanagi, Kaoru

IPC分类号： H01L31/18 ,  H01L21/324

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

公开(公告)号：EP0211634A2

公开(公告)日：1987-02-25

申请号：EP86305952.3

申请日：1986-08-01

申请人： SEL SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Suzuki, Kunio ,  Nagayama, Susumu ,  Inujima, Takashi ,  Abe, Masayoshi ,  Fukada, Takeshi ,  Kinka, Mikio ,  Kobayashi, Ippei ,  Shibata, Katsuhiko ,  Susukida, Masato ,  Koyanagi, Kaoru

IPC分类号： H01L31/18 ,  H01L21/324

CPC分类号： H01L31/208 ,  H01L21/3003 ,  Y02E10/50 ,  Y02P70/521 ,  Y10S148/004 ,  Y10S148/024

摘要： An improved semiconductor fabrication process is disclosed in accordance with which a semiconductor layer just formed by a plasma CVD method for example is subjected to light irradiation under conditions such as to encourage the development of dangling bonds in the surface microstructure of the semiconductor, and the dangling bonds thus formed are then neutralized by the formation of stable combinations between the dangling bonds and a neutralizing agent. The resulting semiconductor does not demonstrate the disadvantageous Staebler-Wronski effect and is advantageous in the fabrication of semiconductor photoelectric conversion devices.