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公开(公告)号：EP0211634A3
公开(公告)日：1988-05-04
申请号：EP86305952
申请日：1986-08-01
发明人： Yamazaki, Shunpei , Suzuki, Kunio , Nagayama, Susumu , Inujima, Takashi , Abe, Masayoshi , Fukada, Takeshi , Kinka, Mikio , Kobayashi, Ippei , Shibata, Katsuhiko , Susukida, Masato , Koyanagi, Kaoru
IPC分类号： H01L31/18 , H01L21/324
CPC分类号： H01L31/208 , H01L21/3003 , Y02E10/50 , Y02P70/521 , Y10S148/004 , Y10S148/024
摘要： An improved semiconductor fabrication process is disclosed in accordance with which a semiconductor layer just formed by a plasma CVD method for example is subjected to light irradiation under conditions such as to encourage the development of dangling bonds in the surface microstructure of the semiconductor, and the dangling bonds thus formed are then neutralized by the formation of stable combinations between the dangling bonds and a neutralizing agent. The resulting semiconductor does not demonstrate the disadvantageous Staebler-Wronski effect and is advantageous in the fabrication of semiconductor photoelectric conversion devices.
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公开(公告)号：EP0225470B1
公开(公告)日：1992-09-09
申请号：EP86115087.8
申请日：1986-10-30
发明人： Yamazaki, Shunpei , Konuma, Toshimitsu , Hamatani, Toshiji , Mase, Akira , Yamaguchi, Toshiharu , Sakama, Mitsunori , Inujima, Takashi
CPC分类号： G02F1/133345
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公开(公告)号：EP0225470A3
公开(公告)日：1987-09-02
申请号：EP86115087
申请日：1986-10-30
发明人： Yamazaki, Shunpei , Konuma, Toshimitsu , Hamatani, Toshiji , Mase, Akira , Yamaguchi, Toshiharu , Sakama, Mitsunori , Inujima, Takashi
IPC分类号： G02F01/133 , G02F01/137
CPC分类号： G02F1/133345
摘要： An improved liquid crystal device immune to contamination of the liquid crystal is shown. The liquid crystal (4) is isolated from ion sources such as glass substrates (1,1'), transparent electrodes (2,2') or so on by means of a nitride layer (3,3') positioned therebetween.
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公开(公告)号：EP0211634B1
公开(公告)日：1994-03-23
申请号：EP86305952.3
申请日：1986-08-01
发明人： Yamazaki, Shunpei , Suzuki, Kunio , Nagayama, Susumu , Inujima, Takashi , Abe, Masayoshi , Fukada, Takeshi , Kinka, Mikio , Kobayashi, Ippei , Shibata, Katsuhiko , Susukida, Masato , Koyanagi, Kaoru
IPC分类号： H01L31/18 , H01L21/324
CPC分类号： H01L31/208 , H01L21/3003 , Y02E10/50 , Y02P70/521 , Y10S148/004 , Y10S148/024
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5.发明公开Liquid crystal device and manufacturing method for same 失效Flüssigkristallvorrichtungund Verfahren zu ihrer Herstellung。
公开(公告)号：EP0225470A2
公开(公告)日：1987-06-16
申请号：EP86115087.8
申请日：1986-10-30
发明人： Yamazaki, Shunpei , Konuma, Toshimitsu , Hamatani, Toshiji , Mase, Akira , Yamaguchi, Toshiharu , Sakama, Mitsunori , Inujima, Takashi
CPC分类号： G02F1/133345
摘要： An improved liquid crystal device immune to contamination of the liquid crystal is shown. The liquid crystal (4) is isolated from ion sources such as glass substrates (1,1'), transparent electrodes (2,2') or so on by means of a nitride layer (3,3') positioned therebetween.
摘要翻译： 示出了不受液晶污染的改进的液晶装置。 液晶（4）通过位于其间的氮化物层（3,3'）从离子源（例如玻璃基板（1,1'），透明电极（2,2'）等）分离。
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公开(公告)号：EP0211634A2
公开(公告)日：1987-02-25
申请号：EP86305952.3
申请日：1986-08-01
发明人： Yamazaki, Shunpei , Suzuki, Kunio , Nagayama, Susumu , Inujima, Takashi , Abe, Masayoshi , Fukada, Takeshi , Kinka, Mikio , Kobayashi, Ippei , Shibata, Katsuhiko , Susukida, Masato , Koyanagi, Kaoru
IPC分类号： H01L31/18 , H01L21/324
CPC分类号： H01L31/208 , H01L21/3003 , Y02E10/50 , Y02P70/521 , Y10S148/004 , Y10S148/024
摘要： An improved semiconductor fabrication process is disclosed in accordance with which a semiconductor layer just formed by a plasma CVD method for example is subjected to light irradiation under conditions such as to encourage the development of dangling bonds in the surface microstructure of the semiconductor, and the dangling bonds thus formed are then neutralized by the formation of stable combinations between the dangling bonds and a neutralizing agent. The resulting semiconductor does not demonstrate the disadvantageous Staebler-Wronski effect and is advantageous in the fabrication of semiconductor photoelectric conversion devices.
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