公开(公告)号：EP2161760B1

公开(公告)日：2017-04-12

申请号：EP09168985.1

申请日：2009-08-31

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Arai, Yasuyuki

IPC分类号： H01L31/05 ,  H01L25/04

CPC分类号： H01L31/0508 ,  H01L25/042 ,  H01L31/0475 ,  H01L31/1896 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

公开(公告)号：EP2259294A2

公开(公告)日：2010-12-08

申请号：EP10010619.4

申请日：2007-04-17

申请人： Semiconductor Energy Laboratory Co, Ltd.

发明人： Yamazaki, Shunpei ,  Suzuki, Yukie ,  Arai, Yasuyuki ,  Moriya, Yoshitaka ,  Ikeda, Kazuko ,  Tanada, Yoshifumi ,  Takahasi, Syuhei

IPC分类号： H01L21/336 ,  H01L27/12 ,  H01L21/77 ,  H01L29/423 ,  H01L21/84 ,  H01L27/13

CPC分类号： H01L29/42368 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/7881

摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.

公开(公告)号：EP1263062B1

公开(公告)日：2010-11-17

申请号：EP02011882.4

申请日：2002-05-28

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Arai, Yasuyuki ,  Shibata, Noriko

IPC分类号： H01L51/05 ,  H01L27/28

CPC分类号： H01L51/0014 ,  H01L21/76895 ,  H01L27/32 ,  H01L27/3244 ,  H01L51/0002 ,  H01L51/0039 ,  H01L51/0042 ,  H01L51/0059 ,  H01L51/0062 ,  H01L51/0081 ,  H01L51/0084 ,  H01L51/0085 ,  H01L51/0525 ,  H01L51/0545 ,  H01L51/0558

公开(公告)号：EP1850374A3

公开(公告)日：2007-11-21

申请号：EP07007815.9

申请日：2007-04-17

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Takahashi, Syuhei ,  Yamazaki, Shunpei ,  Suzuki, Yukie ,  Arai, Yasuyuki ,  Moriya, Yoshitaka ,  Ikeda, Kazuko ,  Tanada, Yoshifumi

IPC分类号： H01L21/336 ,  H01L27/12 ,  H01L21/77 ,  H01L29/423 ,  H01L21/84 ,  H01L27/13

CPC分类号： H01L29/42368 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/7881

摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.

摘要翻译： 半导体器件具有半导体层，覆盖半导体层的端部的栅电极以及用于使半导体层和栅电极绝缘的绝缘层。 使半导体层的端部与栅电极重叠的区域绝缘的绝缘层的膜厚比覆盖半导体层的中央部的绝缘层的膜厚厚。

公开(公告)号：EP1850374A2

公开(公告)日：2007-10-31

申请号：EP07007815.9

申请日：2007-04-17

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Takahashi, Syuhei ,  Yamazaki, Shunpei ,  Suzuki, Yukie ,  Arai, Yasuyuki ,  Moriya, Yoshitaka ,  Ikeda, Kazuko ,  Tanada, Yoshifumi

IPC分类号： H01L21/336 ,  H01L27/12 ,  H01L21/77 ,  H01L29/423 ,  H01L21/84 ,  H01L27/13

CPC分类号： H01L29/42368 ,  H01L21/28273 ,  H01L21/28282 ,  H01L21/84 ,  H01L27/12 ,  H01L27/1203 ,  H01L27/1214 ,  H01L27/1248 ,  H01L27/1255 ,  H01L27/13 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/66825 ,  H01L29/66833 ,  H01L29/78609 ,  H01L29/78618 ,  H01L29/7881

摘要： The semiconductor device has a semiconductor layer, a gate electrode which covers an end portion of the semiconductor layer, and an insulating layer for insulating the semiconductor layer and the gate electrode. The film thickness of the insulating layer which insulates a region where an end portion of the semiconductor layer and the gate electrode overlap each other is thicker than the film thickness of the insulating layer which covers the central portion of the semiconductor layer.

公开(公告)号：EP1054452A3

公开(公告)日：2004-12-29

申请号：EP00110387.8

申请日：2000-05-15

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Arai, Yasuyuki

IPC分类号： H01L29/786 ,  H01L21/336 ,  H01L29/423 ,  H01L27/12 ,  H01L21/20

CPC分类号： H01L29/78627 ,  H01L21/02422 ,  H01L21/02532 ,  H01L21/02672 ,  H01L21/02686 ,  H01L21/02691 ,  H01L27/12 ,  H01L27/1281 ,  H01L29/42384 ,  H01L29/66757 ,  H01L29/78621 ,  H01L29/78684

摘要： To fabricate a crystalline semiconductor film with controlled locations and sizes of the crystal grains, and to utilize the crystalline semiconductor film in the channel-forming region of a TFT in order to realize a high-speed operable TFT. A translucent insulating thermal conductive layer 2 is provided in close contact with the main surface of a substrate 1, and an insular or striped first insulating layer 3 is formed in selected regions on the thermal conductive layer. A second insulating layer 4 and semiconductor film 5 are laminated thereover. The semiconductor film 5 is first formed with an amorphous semiconductor film, and then crystallized by laser annealing. The first insulating layer 3 has the function of controlling the rate of heat flow to the thermal conductive layer 2, and the temperature distribution difference on the substrate 1 is utilized to form a single-crystal semiconductor film on the first insulating layer 3.

摘要翻译： 为了制造具有晶粒的受控位置和尺寸的晶体半导体膜，并且在TFT的沟道形成区域中利用晶体半导体膜以实现高速可操作的TFT。 提供与基板1的主表面紧密接触的半透明绝缘导热层2，并且在导热层上的选定区域中形成岛状或带状的第一绝缘层3。 在其上层压第二绝缘层4和半导体膜5。 半导体膜5首先由非晶半导体膜形成，然后通过激光退火结晶。 第一绝缘层3具有控制到导热层2的热流速的功能，并且利用基板1上的温度分布差在第一绝缘层3上形成单晶半导体膜。

公开(公告)号：EP1198017A2

公开(公告)日：2002-04-17

申请号：EP01124132.0

申请日：2001-10-10

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Arai, Yasuyuki ,  Osada, Mai

IPC分类号： H01L51/20

CPC分类号： G09G3/3233 ,  G09G3/006 ,  G09G2300/0842 ,  G09G2310/0251 ,  G09G2310/0256 ,  G09G2320/043 ,  H01L27/3244 ,  H01L51/0087 ,  H01L51/5206 ,  H01L2251/568

摘要： A method of repairing a light emitting device which makes high quality image display possible even if a pin hole is formed during formation of an EL layer is provided. The method of repairing a light emitting device is characterized in that a reverse bias voltage is applied to an EL element at given time intervals to thereby reduce a current flowing into an EL element when the reverse bias voltage is applied to the EL element.

摘要翻译： 提供了一种修复发光器件的方法，即使在形成EL层期间形成针孔时也能够进行高品质图像显示。 修复发光器件的方法的特征在于，以给定的时间间隔向EL元件施加反向偏置电压，从而当向EL元件施加反向偏置电压时，减少流入EL元件的电流。

公开(公告)号：EP2161760A3

公开(公告)日：2015-09-16

申请号：EP09168985.1

申请日：2009-08-31

申请人： Semiconductor Energy Laboratory Co., Ltd.

发明人： Arai, Yasuyuki

IPC分类号： H01L31/05 ,  H01L25/04

CPC分类号： H01L31/0508 ,  H01L25/042 ,  H01L31/0475 ,  H01L31/1896 ,  H01L2924/0002 ,  Y02E10/50 ,  H01L2924/00

摘要： An object of the present invention is to provide a simple process to manufacture a wiring connecting photoelectric cells in a photoelectric conversion device. Another object of this invention is to prevent defective rupture from occurring in the said wiring. The photoelectric conversion device comprises a first and a second photoelectric conversion cells comprising respectively a first and a second single crystal semiconductor layers. First electrodes are provided on the downwards surfaces of the first and second photoelectric conversion cells, and second electrodes are provided on their upwards surfaces. The first and second photoelectric conversion cells are fixed onto a support substrate side by side. The second single crystal semiconductor layer has a through hole which reaches the first electrode. The second electrode of the first photoelectric conversion cell is extended to the through hole to be electrically connected to the first electrode of the second photoelectric conversion cell.

公开(公告)号：EP1093167B1

公开(公告)日：2012-07-25

申请号：EP00122181.1

申请日：2000-10-12

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Yamamoto, Kunitaka ,  Arai, Yasuyuki

IPC分类号： H01L51/00 ,  H01L51/56 ,  H01L27/32 ,  H01L21/48

CPC分类号： H01L51/0005 ,  H01L27/12 ,  H01L27/1214 ,  H01L27/3211 ,  H01L27/3244 ,  H01L27/3246 ,  H01L27/3258 ,  H01L29/78621 ,  H01L29/78624 ,  H01L29/78627 ,  H01L29/78645 ,  H01L51/5228 ,  H01L51/524

摘要： The present invention aims to provide simple, high-speed processing for the formation of an EL layer by an ink-jet method. A method of manufacturing an electro-optical device having good operation performance and high reliability, and in particular, a method of manufacturing an EL display device, is provided. The present invention forms EL layers continuously across a plurality of pixels when the EL layers are formed by the ink-jet method. Specifically, with respect to m columns and n rows of pixel electrodes arranged in a matrix state, the EL layers are formed so as to form stripes with respect to one certain selected row or one column. The EL layers may also be formed having an oblong shape or a rectangular shape with respect to each pixel electrode.

摘要翻译： 本发明旨在通过喷墨法提供用于形成EL层的简单的高速处理。 提供了具有良好的操作性能和高可靠性的电光装置的制造方法，特别是制造EL显示装置的方法。 当通过喷墨法形成EL层时，本发明在多个像素上连续地形成EL层。 具体而言，对于以矩阵状排列的m列和n行的像素电极，EL层形成为相对于某一特定行或一列形成条纹。 EL层也可以相对于每个像素电极形成为长方形或矩形。

公开(公告)号：EP1154383B1

公开(公告)日：2007-08-22

申请号：EP01111375.0

申请日：2001-05-09

申请人： SEMICONDUCTOR ENERGY LABORATORY CO., LTD.

发明人： Yamazaki, Shunpei ,  Koyama, Jun ,  Arai, Yasuyuki ,  Suzawa, Hideomi ,  Ono, Koji ,  Takayama, Toru

IPC分类号： G07C9/00

CPC分类号： G06K9/0004 ,  G07C9/00158 ,  H04M1/673 ,  H04M1/72519