公开(公告)号：EP3780074A3

公开(公告)日：2021-06-02

申请号：EP20191180.7

申请日：2020-08-14

Applicant: STMicroelectronics S.r.l.

Inventor： ZIGLIOLI, Federico Giovanni ,  PINTUS, Alberto ,  DERAI, Michele ,  MAGNI, Pierangelo

IPC: H01L21/56 ,  H01L21/60 ,  H01Q1/22 ,  H01L23/552 ,  H01L23/367 ,  H01L23/31

Abstract: A method of manufacturing semiconductor devices, such as integrated circuits comprises:
- providing a support surface (10),
- arranging one or more semiconductor dice (12) on the support surface (10),
- molding laser direct structuring (LDS) material (14) onto the support surface (10) having the semiconductor die/dice (12) arranged thereon,
- laser beam processing (L) the laser direct structuring material (14) molded onto the support surface (10) having the semiconductor die/dice (12) arranged thereon to provide electrically conductive formations (16) for the semiconductor die/dice (12) arranged on the support surface, and
- separating from the support surface (10) the semiconductor die/dice (12) provided with said electrically-conductive formations (16).

公开(公告)号：EP3832701A1

公开(公告)日：2021-06-09

申请号：EP20210546.6

申请日：2020-11-30

Applicant: STMicroelectronics S.r.l.

Inventor： ZIGLIOLI, Federico Giovanni ,  PINTUS, Alberto ,  MAGNI, Pierangelo

IPC: H01L21/48 ,  H01L23/498 ,  H01L23/538

Abstract: A method of manufacturing semiconductor devices (10) comprises:
- providing a plastic material substrate (100) having at least one die mounting location (102) for a semiconductor die (104),
- forming metallic traces (108a, 108b) on selected areas of the plastic material substrate (100), wherein the metallic traces (108a, 108b) provide electrically-conductive paths for coupling to the semiconductor die (104),
- attaching the semiconductor die (104) onto the at least one die mounting location (102),
- bonding the semiconductor die (104) attached onto the at least one die mounting location (102) to selected ones of the metallic traces (108a, 108b) formed on the plastic material substrate (100),
- molding package material (110) onto the semiconductor die (104) attached onto the at least one die mounting location (102).

公开(公告)号：EP2032255A1

公开(公告)日：2009-03-11

申请号：EP06780577.0

申请日：2006-06-23

Applicant: STMicroelectronics S.r.l.

Inventor： MAGNI, Pierangelo ,  BRIOSCHI, Roberto

IPC: B01L3/00

CPC classification number: B01L3/502707 ,  B01L2200/027 ,  B01L2200/10 ,  B01L2300/043 ,  B01L2300/0609 ,  B01L2300/0867 ,  B01L2300/123 ,  B01L2300/1805 ,  B01L2400/0481 ,  B01L2400/0622 ,  B01L2400/0638 ,  B01L2400/0644 ,  Y10T436/25 ,  Y10T436/2575

Abstract: In a microfluidic assembly (20), a microfluidic device (1') is provided with a body (4) in which at least a first inlet (7) for loading a fluid to analyse and a buried area (8) in fluidic communication with the first inlet (7) are defined. An analysis chamber (10') is in fluidic communication with the buried area (8) and an interface cover (23) is coupled in a fluid-tight manner above the microfluidic device (1'). The interface cover (23) is provided with a sealing portion (35) in correspondence to the analysis chamber (10'), adapted to assume a first configuration, at rest, in which it leaves the analysis chamber (10') open, and a second configuration, as a consequence of a stress, in which it closes in a fluid-tight manner the same analysis chamber.

公开(公告)号：EP4181177A1

公开(公告)日：2023-05-17

申请号：EP22204387.9

申请日：2022-10-28

Applicant: STMicroelectronics S.r.l.

Inventor： DERAI, Michele ,  MAGNI, Pierangelo

IPC: H01L21/48 ,  H01L23/495 ,  H01L23/00

Abstract: A semiconductor device (10) comprises a semiconductor die (14) arranged on a substrate such as a leadframe (12A, 12B) and an encapsulation of laser direct structuring, LDS material (16; 161, 162) molded onto the semiconductor die (14).
A through mold via or TMV (182) extending through the encapsulation of LDS material (16; 161, 162) comprises:
an enlarged collar section (182A) that extends through a first portion (161) of the encapsulation (16) from an outer surface (1613) to an intermediate plane (1612) of the encapsulation (16), the enlarged collar section (182A) having a cross-sectional area at the intermediate plane (1612) of the encapsulation (16), and
a frusto-conical section (182B) that extends through a second portion (162) of the encapsulation (16; 161, 162) from a first end having a first diameter at the intermediate plane (1612) to a second end having a second diameter away from the intermediate plane (1612) of the encapsulation (16; 161, 162).
The first end of the frusto-conical section (182B) has an area smaller than the cross-sectional area of the enlarged collar section (182A) at the intermediate plane (1612) and the second diameter of the frusto-conical section (182B) is smaller than the first diameter of the frusto-conical section (182B). The through mold via (182) can thus have an aspect ratio which is not limited to 1:1.

公开(公告)号：EP3780074A2

公开(公告)日：2021-02-17

申请号：EP20191180.7

申请日：2020-08-14

Applicant: STMicroelectronics S.r.l.

Inventor： ZIGLIOLI, Federico Giovanni ,  PINTUS, Alberto ,  DERAI, Michele ,  MAGNI, Pierangelo

IPC: H01L21/56 ,  H01L21/60 ,  H01Q1/22 ,  H01L23/552 ,  H01L23/36

Abstract: A method of manufacturing semiconductor devices, such as integrated circuits comprises:
- providing a support surface (10),
- arranging one or more semiconductor dice (12) on the support surface (10),
- molding laser direct structuring (LDS) material (14) onto the support surface (10) having the semiconductor die/dice (12) arranged thereon,
- laser beam processing (L) the laser direct structuring material (14) molded onto the support surface (10) having the semiconductor die/dice (12) arranged thereon to provide electrically conductive formations (16) for the semiconductor die/dice (12) arranged on the support surface, and
- separating from the support surface (10) the semiconductor die/dice (12) provided with said electrically-conductive formations (16).