摘要:
A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.
摘要:
Radiation sensor including a detection assembly (102; 202) and a chopper assembly (101), which are mechanically coupled to delimit a main cavity (61; 216); and wherein the chopper assembly (101) includes: a suspended movable structure (55), which extends in the main cavity (61; 261); and an actuation structure (63, 65), which is electrically controllable to cause a change of position of the suspended movable structure (55). The detection unit (102; 202) includes a detection structure (80; 180; 280; 380), which faces the main cavity (61; 261) and includes a number of detection devices (94; 194). The suspended movable structure (55) includes a first shield (34) of conductive material, which shields the detection devices (94) from the radiation, the shielding of the detection devices (94) being a function of the position of the suspended movable structure (55).
摘要:
A sensing element (25) is integrated in a semiconductor material chip (60) and has a sensing diode (3), of a junction type, configured to be reverse biased so that its junction capacitance is sensitive to the local temperature. A reading stage (28) is coupled to the sensing element for detecting variations of the junction capacitance of the sensing diode and outputting a reading acquisition signal proportional to the local temperature of the sensing diode. The sensing diode (3) has a cathode terminal (K) coupled to a biasing node (2) and an anode terminal (A) coupled to a first input (7) of the sensing stage (28). The biasing node (2) receives a voltage (DRH) positive with respect to the first input (7) of the sensing stage (28) for keeping the sensing diode reverse biased.
摘要:
A thermographic sensor (105) is proposed. The thermographic sensor (105) comprises one or more thermo-couples (305), each for providing a sensing voltage depending on a difference between a temperature of a hot joint (H) and a temperature of a cold joint (P-N) of the thermo-couple (305); the thermographic sensor (105) further comprises one or more sensing transistors (310), each driven according to the sensing voltages of one or more corresponding thermo-couples (305) for providing a sensing electrical signal depending on its temperature and on the corresponding sensing voltages. A thermographic device (100) comprising the thermographic sensor (105) and a corresponding signal processing circuit (110), and a system (700) comprising one or more thermographic devices (100) are also proposed.
摘要:
A measurement system is described. The measurement system comprises a first capacitance (C 1 ), a second capacitance (C 2 ), a switching circuit (32a), a control circuit (36a) and a measurement circuit (34a). During a normal operating phase, the measurement system charges and discharges the first and second capacitances. For this purpose, the switching circuit (32a) and the control circuit (36a) periodically connect a first terminal of the first capacitance (C 1 ) to a first voltage (V 1 ) and a reference voltage (V ref ), and similarly a first terminal of the second capacitance (C 2 ) to a second voltage (V 2 ) and the reference voltage (V ref ). Conversely, the second terminal of the first capacitance (C 1 ) and the second terminal of the second capacitance (C 2 ) are connected to the input terminals of a differential operational amplifier (3440) of the differential integrator, whereby the charge difference between the capacitances (Ci, C 2 ) is transferred to the differential integrator. In this respect, a comparator with hysteresis (3446) triggers when the output signal of the differential integrator exceeds the hysteresis threshold of the comparator with hysteresis (3446). In particular, two decoupling capacitances (C DEC1 , C DEC2 ) are connected between the input of the comparator with hysteresis (3446) and the output of the differential integrator, and the measurement systems uses two reset phases in order to store various disturbances to these decoupling capacitances (C DEC1 , C DEC2 ), thereby improving the precision of the measurement during the normal operating phase.
摘要:
A packaged sensor assembly includes: a packaging structure (2), having at least one opening (18); a humidity sensor (5) and a pressure sensor (10), which are housed inside the packaging structure (2) and communicate fluidically with the outside through the opening (18), and a control circuit (7), operatively coupled to the humidity sensor (5) and to the pressure sensor (10); wherein the humidity sensor (5) and the control circuit (7) are integrated in a first chip (3), and the pressure sensor (10) is integrated in a second chip (8) distinct from the first chip (3) and bonded to the first chip (3).