公开(公告)号：EP2518840A4

公开(公告)日：2014-12-31

申请号：EP10839085

申请日：2010-11-11

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： YOSHIZUMI YUSUKE ,  ENYA YOHEI ,  KYONO TAKASHI ,  SUMITOMO TAKAMICHI ,  SAGA NOBUHIRO ,  ADACHI MASAHIRO ,  SUMIYOSHI KAZUHIDE ,  TOKUYAMA SHINJI ,  TAKAGI SHIMPEI ,  IKEGAMI TAKATOSHI ,  UENO MASAKI ,  KATAYAMA KOJI

IPC分类号： H01S5/343

CPC分类号： H01S5/34333 ,  B82Y20/00 ,  H01S5/0202 ,  H01S5/0207 ,  H01S5/2201 ,  H01S5/3202

公开(公告)号：EP2346068A4

公开(公告)日：2013-06-12

申请号：EP09822028

申请日：2009-10-20

申请人： SUMITOMO ELECTRIC INDUSTRIES

发明人： SHIOMI HIROMU ,  SUMIYOSHI KAZUHIDE ,  SAITOH YU ,  KIYAMA MAKOTO

IPC分类号： H01L21/205 ,  H01L21/02 ,  H01L21/336 ,  H01L29/04 ,  H01L29/12 ,  H01L29/20 ,  H01L29/32 ,  H01L29/417 ,  H01L29/423 ,  H01L29/47 ,  H01L29/66 ,  H01L29/78 ,  H01L29/861 ,  H01L29/872

CPC分类号： H01L29/7802 ,  H01L21/02389 ,  H01L21/0243 ,  H01L21/02433 ,  H01L21/0254 ,  H01L29/045 ,  H01L29/2003 ,  H01L29/32 ,  H01L29/41741 ,  H01L29/4238 ,  H01L29/475 ,  H01L29/66712 ,  H01L29/861 ,  H01L29/872

摘要： Provided is a III nitride semiconductor electronic device having a structure capable of reducing leakage current. A laminate 11 includes a substrate 13 and a III nitride semiconductor epitaxial film 15. The substrate 13 is made of a III nitride semiconductor having a carrier concentration of more than 1×10 18 cm -3 . The epitaxial structure 15 includes a III nitride semiconductor epitaxial film 17. A first face 13a of the substrate 13 is inclined at an angle ¸ of more than 5 degrees with respect to an axis Cx extending in a direction of the c-axis. A normal vector VN and a c-axis vector VC make the angle ¸. The III nitride semiconductor epitaxial film 17 includes first, second and third regions 17a, 17b and 17c arranged in order in a direction of a normal to the first face 13a. A dislocation density of the third region 17c is smaller than that of the first region 17a. A dislocation density of the second region 17b is smaller than that of the substrate 13.