公开(公告)号：EP4492443A1

公开(公告)日：2025-01-15

申请号：EP24165821.0

申请日：2024-03-25

Applicant: Samsung Electronics Co., Ltd.

Inventor： LEE, Sunjung ,  YOO, Donggon ,  HWANG, Jeongwon

IPC: H01L21/768 ,  H01L21/8238 ,  H01L27/06 ,  H01L23/485 ,  H01L23/528

Abstract: The present disclosure relates to three-dimensional semiconductor devices. An example three-dimensional semiconductor device includes a back-side metal layer, a lower active region on the back-side metal layer, the lower active region including a lower channel pattern and a lower source/drain pattern connected with the lower channel pattern, an upper active region on the lower active region, the upper active region including an upper channel pattern and an upper source/drain pattern connected with the upper channel pattern, an interlayer insulating layer enclosing the lower and upper source/drain patterns, a penetration conductive pattern extending through the interlayer insulating layer in a vertical direction, and an inhibitor covering a side surface of a lower portion of the penetration conductive pattern. The inhibitor includes a carbon atom.

公开(公告)号：EP4435844A1

公开(公告)日：2024-09-25

申请号：EP24164411.1

申请日：2024-03-19

Applicant: Samsung Electronics Co., Ltd.

Inventor： YOO, Donggon

IPC: H01L21/822 ,  H01L21/768 ,  H01L21/8234 ,  H01L27/06 ,  H01L27/088 ,  H01L23/48 ,  H01L29/417 ,  H01L29/775 ,  H01L21/8238 ,  H01L27/092

CPC classification number: H01L21/8221 ,  H01L21/823475 ,  H01L27/088 ,  H01L27/0688 ,  H01L21/76898 ,  H01L29/41725 ,  H01L29/66439 ,  H01L29/775 ,  H01L23/481 ,  H01L21/823871 ,  H01L27/092 ,  H01L29/0673 ,  H01L29/0847 ,  H01L23/485 ,  H01L21/76805 ,  H01L21/76897

Abstract: A semiconductor device includes: insulating patterns; a device isolation layer on side surfaces of the insulating patterns; gate structures; source/drain regions (150) on the insulating patterns; a via structure (190) between the gate structures and between the source/drain regions; and contact structures (180) connected to the source/drain regions and the via structure, wherein the source/drain regions may include first source/drain regions (150A) and second source/drain regions (150B), wherein the via structure may extend from the same level as lower surfaces of the first source/drain regions to the same level as upper surfaces of the second source/drain regions, and the via structure may include a portion in which a width of the via structure increases and then decreases or decreases and then increases, wherein the contact structures may include a first contact structure contacting the first source/drain regions and a second contact structure contacting the second source/drain regions.