公开(公告)号：EP2323159A1

公开(公告)日：2011-05-18

申请号：EP10191250.9

申请日：2010-11-15

申请人： Samsung Mobile Display Co., Ltd.

发明人： Lee, Dong-Hyun ,  Lee, Ki-Yong ,  Seo, Jin-Wook ,  Yang, Tae-Hoon ,  Lisachenko, Maxim ,  Park, Byoung-Keon ,  Lee, Kil-Won ,  Jung, Jae-Wan

IPC分类号： H01L21/20 ,  H01L21/336 ,  H01L29/786 ,  H01L21/77

CPC分类号： H01L29/78675 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277 ,  H01L27/1281 ,  H01L27/1285 ,  H01L27/1296 ,  H01L29/66757 ,  H01L29/78696

摘要： A method of forming a polycrystalline silicon layer, a thin film transistor (TFT), an organic light emitting diode (OLED) display device having the same, and methods of fabricating the same. The method of forming a polycrystalline silicon layer includes providing a substrate, forming a buffer layer on the substrate, forming an amorphous silicon layer on the buffer layer, forming a groove in the amorphous silicon layer, forming a capping layer on the amorphous silicon layer, forming a metal catalyst layer on the capping layer, and annealing the substrate and crystallizing the amorphous silicon layer into a polycrystalline silicon layer,

摘要翻译： 形成多晶硅层的方法，薄膜晶体管（TFT）上的有机发光具有相同的二极管（OLED）显示装置，以及制造它们的方法。 形成多晶硅层的方法包括：提供基板，在基板上形成缓冲层，在缓冲层上的无定形硅层的形成，形成在无定形硅层的凹槽中，无定形硅层上形成覆盖层， 形成覆盖层上形成金属催化剂层，和退火基板和非晶硅层结晶成多晶硅层，

公开(公告)号：EP2204844A1

公开(公告)日：2010-07-07

申请号：EP09180959.0

申请日：2009-12-30

申请人： Samsung Mobile Display Co., Ltd.

发明人： Lee, Dong-Hyun ,  Lee, Ki-Yong ,  Seo, Jin-Wook ,  Yang, Tae-Hoon ,  Lisachenko, Maxim ,  Park, Byoung-Keon ,  Lee, Kil-Won ,  Jung, Jae-Wan

IPC分类号： H01L21/336 ,  H01L29/786

CPC分类号： H01L29/66765 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L29/66757 ,  H01L29/78696

摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLED) display device equipped with the thin film transistor, wherein the thin film transistor includes a substrate (100, 300), a buffer layer (110, 310) disposed on the substrate (100, 300), a first semiconductor layer (160, 340) and a second semiconductor layer (170, 350) disposed on the buffer layer (110, 310), a gate electrode (185, 320) insulated from the first semiconductor layer (160, 340) and the second semiconductor layer (170, 350), a gate insulating layer (180, 330) insulating the gate electrode (185, 320) from the first semiconductor layer (160, 340) and the second semiconductor layer (170, 350), and source and drain electrodes (200a, 200b, 360a, 360b) insulated from the gate electrode (185, 320), wherein the second semiconductor layer (170, 350) is disposed on the first semiconductor layer (160, 340) and is connected to one of the source and drain electrodes (200a, 200b, 360a, 360b).

摘要翻译： 一种薄膜晶体管，制造该薄膜晶体管的方法，以及有机发光装有薄膜晶体管，worin薄膜晶体管包括衬底（100，300），缓冲层（二极管（OLED）显示装置 110，310）设置在所述基片（100，300），第一半导体层（160，340）和设置在所述缓冲层（110，310），栅电极（185上的第二半导体层（170，350）， 320）从所述第一半导体层（160，340）和所述第二半导体层（170，350）绝缘，栅极绝缘层（180，330）绝缘从所述第一半导体层与栅电极（185，320）（160， 340）和所述第二半导体层（170，350），以及源电极和漏电极（200A，200B，360A，360B）从栅电极（185，320）绝缘，worin所述第二半导体层（170，350）被设置 在第一半导体层（160，340）和被连接到源极中的一个电极和漏电极（200A， 200B，360A，360B）。

公开(公告)号：EP2061074A2

公开(公告)日：2009-05-20

申请号：EP08020383.9

申请日：2007-05-18

申请人： Samsung Mobile Display Co., Ltd.

发明人： Yang, Tae-Hoon ,  Lee, Ki-Yong ,  Seo, Jin-Wook ,  Park, Byoung-Keon

IPC分类号： H01L21/77 ,  H01L21/20 ,  H01L21/322

CPC分类号： H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/3226 ,  H01L27/1277 ,  H01L27/1288

摘要： A method of forming a complimentary metal-oxide semiconductor (CMOS) having a p-type metal-oxide semiconductor (PMOS) and an n-type metal-oxide semiconductor (NMOS) comprises doping both the PMOS and the NMOS simultaneously with an impurity that getters remaining metal catalyst from the PMOS and forms a lightly doped drain region in the NMOS.

摘要翻译： 形成具有p型金属氧化物半导体（PMOS）和n型金属氧化物半导体（NMOS）的互补金属氧化物半导体（CMOS）的方法包括同时掺杂PMOS和NMOS两者的杂质，杂质为 吸附剂从PMOS中剩余金属催化剂，并在NMOS中形成轻掺杂的漏极区。

公开(公告)号：EP2061074A3

公开(公告)日：2011-09-14

申请号：EP08020383.9

申请日：2007-05-18

申请人： Samsung Mobile Display Co., Ltd.

发明人： Yang, Tae-Hoon ,  Lee, Ki-Yong ,  Seo, Jin-Wook ,  Park, Byoung-Keon

IPC分类号： H01L21/77 ,  H01L21/20

CPC分类号： H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/3226 ,  H01L27/1277 ,  H01L27/1288

摘要： A method of forming a complimentary metal-oxide semiconductor (CMOS) having a p-type metal-oxide semiconductor (PMOS) and an n-type metal-oxide semiconductor (NMOS) comprises doping both the PMOS and the NMOS simultaneously with an impurity that getters remaining metal catalyst from the PMOS and forms a lightly doped drain region in the NMOS.

公开(公告)号：EP2226848A1

公开(公告)日：2010-09-08

申请号：EP10154492.2

申请日：2010-02-24

申请人： Samsung Mobile Display Co., Ltd.

发明人： Lee, Dong-Hyun ,  Lee, Ki-Yong ,  Seo, Jin-Wook ,  Yang, Tae-Hoon ,  Park, Byoung-Keon ,  Lee, Kil-Won ,  Lisachecnko, Maxim ,  Jung, Jae-Wan

IPC分类号： H01L29/786 ,  H01L21/20

CPC分类号： H01L21/02532 ,  H01L21/02422 ,  H01L21/02488 ,  H01L21/02672 ,  H01L27/1277 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： A thin film transistor, a method of fabricating the same, and an organic light emitting diode display device having the same, the thin film transistor including: a substrate; a silicon layer formed on the substrate; a diffusion layer formed on the silicon layer; a semiconductor layer that is crystallized using a metal catalyst, formed on the diffusion layer; a gate electrode disposed on the diffusion layer, facing a channel region of the semiconductor layer; a gate insulating layer disposed between the gate electrode and the semiconductor layer; and source and drain electrodes electrically connected to source and drain regions of the semiconductor layer.

摘要翻译： 一种薄膜晶体管及其制造方法，以及具有该薄膜晶体管的有机发光二极管显示装置，所述薄膜晶体管包括：衬底; 在衬底上形成的硅层; 在硅层上形成的扩散层; 形成在扩散层上的使用金属催化剂结晶的半导体层; 设置在所述扩散层上的栅电极，所述栅电极面向所述半导体层的沟道区; 栅绝缘层，设置在栅电极和半导体层之间; 以及电连接到半导体层的源极区和漏极区的源电极和漏电极。

公开(公告)号：EP2226845A2

公开(公告)日：2010-09-08

申请号：EP10154502.8

申请日：2010-02-24

申请人： Samsung Mobile Display Co., Ltd.

发明人： Park, Byoung-Keon ,  Yang, Tae-Hoon ,  Seo, Jin-Wook ,  Jo, Soo-Beom ,  Lee, Dong-Hyun ,  Lee, Kil-Won ,  Lisachenko, Maxim ,  Chung, Yun-Mo ,  Choi, Bo-Kyung ,  Park, Jong-Ryuk ,  Lee, Ki-Yong

IPC分类号： H01L27/32

CPC分类号： H01L51/52 ,  H01L27/3265 ,  H01L2227/323

摘要： An organic light emitting diode (OLED) display device and a method of fabricating the same are provided. The OLED display device includes a substrate having a thin film transistor region and a capacitor region, a buffer layer disposed on the substrate, a gate insulating layer disposed on the substrate, a lower capacitor electrode disposed on the gate insulating layer in the capacitor region, an interlayer insulating layer disposed on the substrate, and an upper capacitor electrode disposed on the interlayer insulating layer and facing the lower capacitor electrode, wherein regions of each of the buffer layer, the gate insulating layer, the interlayer insulating layer, the lower capacitor electrode, and the upper capacitor electrode have surfaces in which protrusions having the same shape as grain boundaries of the semiconductor layer are formed. The resultant capacitor has an increased surface area, and therefore, an increased capacitance.

公开(公告)号：EP2117048A3

公开(公告)日：2010-03-31

申请号：EP09157829.4

申请日：2009-04-14

申请人： Samsung Mobile Display Co., Ltd.

发明人： Park, Byoung-Keon ,  Seo, Jin-Wook ,  Yang, Tae-Hoon ,  Lee, Kil-Won ,  Lee, Dong-Hyun

IPC分类号： H01L29/786

CPC分类号： H01L29/78615 ,  H01L27/1277 ,  H01L29/4908 ,  H01L29/66757

摘要： A thin film transistor, a method of fabricating the same, and an OLED display device having the same. The thin film transistor includes a substrate, a semiconductor layer disposed on the substrate and having a channel region, source and drain regions, and a body contact region, a gate insulating layer disposed on the semiconductor layer to expose the body contact region, a silicon layer disposed on the gate insulating layer and contacting the body contact region exposed by the gate insulating layer, a gate electrode disposed on the silicon layer, an interlayer insulating layer disposed on the gate electrode, and source and drain electrodes disposed on the interlayer insulating layer and electrically connected with the source and drain regions, wherein the body contact region is formed in an edge region of the semiconductor layer.

公开(公告)号：EP2325870A1

公开(公告)日：2011-05-25

申请号：EP10251967.5

申请日：2010-11-19

申请人： Samsung Mobile Display Co., Ltd.

发明人： Lee, Dong-Hyun ,  Lee, Ki-Yong ,  Seo, Jin-Wook ,  Yang, Tae-Hoon ,  Chung, Yun-Mo ,  Park, Byoung-Keon ,  Lee, Kil-Won ,  Park, Jong-Ryuk ,  Choi, Bo-Kyung ,  So, Byung-Soo

IPC分类号： H01L21/20 ,  H01L21/02

CPC分类号： H01L21/02672 ,  H01L21/0206 ,  H01L21/02488 ,  H01L21/02491 ,  H01L21/02532 ,  H01L21/477 ,  H01L27/1277 ,  H01L27/3244 ,  H01L29/66757 ,  H01L29/78603 ,  H01L29/78675

摘要： A method of fabricating an organic light emitting diode (OLED) display device having a thin film transistor including a polysilicon layer. The method of fabricating a polysilicon layer includes forming a buffer layer on a substrate, forming a metal catalyst layer on the buffer layer, diffusing a metal catalyst into the metal catalyst layer to the buffer layer, removing the metal catalyst layer, forming an amorphous silicon layer on the buffer layer, and annealing the substrate to crystallize the amorphous silicon layer into a polysilicon layer.
The thin film transistor includes a substrate, a buffer layer disposed on the substrate, a semiconductor layer disposed on the buffer layer, a gate insulating layer disposed above the substrate and on the semiconductor layer, a gate electrode disposed on the gate insulating layer, a source electrode and a drain electrode both electrically connected to the semiconductor layer, and a metal silicide disposed between the buffer layer and the semiconductor layer.

摘要翻译： 有机发光具有薄膜晶体管包括一多晶硅层二极管（OLED）显示装置的制造的方法。 制造多晶硅层的方法包括：形成在基板的缓冲层，在所述缓冲层上形成金属催化剂层，扩散的金属催化剂为金属催化剂层到所述缓冲层，在去除金属催化剂层，无定形硅的形成 层中的缓冲层上，并退火所述衬底以结晶非晶硅层转化为多晶硅层。 该薄膜晶体管包括基板，设置在基板的缓冲层，设置在缓冲层，上述基片和所述半导体层上设置在栅极绝缘层上的半导体层，栅电极设置在栅极绝缘层， 源电极和漏电极二者与半导体层电连接，并且在缓冲层和半导体层之间设置金属硅化物。

公开(公告)号：EP2204845A1

公开(公告)日：2010-07-07

申请号：EP09180961.6

申请日：2009-12-30

申请人： Samsung Mobile Display Co., Ltd.

发明人： Park, Byoung-Keon ,  Lee, Dong-Hyun ,  Lee, Kil-Won ,  Yang, Tae-Hoon ,  Seo, Jin-Wook ,  Lee, Ki-Yong ,  AHN, Ji-Su ,  Lisachenko, Maxim

IPC分类号： H01L21/336 ,  H01L29/786 ,  H01L21/77

CPC分类号： H01L21/02672 ,  H01L21/02488 ,  H01L21/02532 ,  H01L27/1277 ,  H01L27/1281 ,  H01L29/66757 ,  H01L29/66765 ,  H01L29/78696

摘要： A thin film transistor, a method of fabricating the thin film transistor, and an organic light emitting diode (OLEO) display device including the thin film transistor, the thin film transistor including: a substrate; a buffer layer formed on the substrate; a first semiconductor layer disposed on the buffer layer; a second semiconductor layer disposed on the first semiconductor layer, which is larger than the first semiconductor layer; a gate electrode insulated from the first semiconductor layer and the second semiconductor layer; a gate insulating layer to insulate the gate electrode from the first semiconductor layer and the second semiconductor layer; source and drain electrodes insulated from the gate electrode and connected to the second semiconductor layer; an insulating layer disposed on the source and drain electrodes, and an organic light emitting diode connected to one of the source and drain electrodes.

摘要翻译： 一种薄膜晶体管，制造该薄膜晶体管的方法，以及有机发光二极管（OLEO）显示装置包括薄膜晶体管，所述薄膜晶体管包括：基板; 形成在基板的缓冲层; 设置在缓冲层上的第一半导体层; 设置在第一半导体层上的第二半导体层，在所有比所述第一半导体层大; 从第一半导体层和第二半导体层绝缘的栅极电极; 栅极绝缘层，以绝缘所述第一半导体层和第二半导体层的栅电极; 从所述栅电极绝缘并连接到所述第二半导体层的源电极和漏电极; 上绝缘层，设置在源层和漏电极，并连接到源电极和漏电极中的一个有机发光二极管。

公开(公告)号：EP2003695A3

公开(公告)日：2011-08-10

申请号：EP08252041.2

申请日：2008-06-13

申请人： Samsung Mobile Display Co., Ltd.

发明人： Yang, Tae-Hoon ,  Lee, Ki-Yong c/o (Mobile Display R D Center) IP Group ,  Seo, Jin-Wook ,  Park, Byoung-Keon

IPC分类号： H01L27/12 ,  H01L21/77

CPC分类号： H01L27/12 ,  H01L21/02488 ,  H01L21/02532 ,  H01L21/02672 ,  H01L27/1277

摘要： A thin film transistor (TFT), a method of fabricating the TFT, and a display device including the TFT are provided. The TFT includes a semiconductor layer having a channel region and source and drain regions is crystallized using a crystallization-inducing metal. The crystallization-inducing metal is gettered by either a metal other than the crystallization-inducing metal or a metal silicide of a metal other than the crystallization-inducing metal. A length and width of the channel region of the semiconductor layer and a leakage current of the semiconductor layer satisfy the following equation: loff/W=(3.4x10 -15 )L 2 +(2.4x10 -12 )L+c, wherein loff (A) is the leakage current of the semiconductor layer, W (mm) is the width of the channel region, L(µm) is the length of the channel region, and "c" is a constant ranging from 2.5x10 -13 to 6.8x10 -13 .