公开(公告)号：EP3248194A1

公开(公告)日：2017-11-29

申请号：EP15805085.6

申请日：2015-11-25

申请人： SanDisk Technologies LLC

发明人： LAI, Chun-Hung ,  YIN, Cheng-Kuan ,  LEE, Shih-Chung ,  DUTTA, Deepanshu ,  OOWADA, Ken

IPC分类号： G11C11/56 ,  G11C16/10 ,  G11C16/34 ,  G11C16/04

CPC分类号： G11C16/14 ,  G11C11/5628 ,  G11C16/0483 ,  G11C16/10 ,  G11C16/3431 ,  G11C16/349 ,  G11C2211/5648 ,  G11C2216/24

摘要： A non-volatile memory system utilizes partial block erasing during program operations to mitigate the effects of programming pass voltage disturbances. A programming request is received that is associated with a group of word lines from a block, such as all or a portion of the word lines. The system erases and soft programs the block prior to beginning programming. The system programs a subset of the word lines of the block for the programming request. After programming the subset of word lines, the system pauses the programming operation and performs an erase operation for the unprogrammed word lines of the block. The already programmed word lines and one or more optional buffer word lines may be inhibited from erasing during the erase operation. After erasing the unprogrammed word lines, the system completes the programming request by programming the remaining user data in the unprogrammed region of the block.

公开(公告)号：EP3114691A1

公开(公告)日：2017-01-11

申请号：EP15710378.9

申请日：2015-03-05

申请人： SanDisk Technologies LLC

发明人： TSENG, Huai-Yuan ,  LEE, Dana ,  LEE, Shih-Chung ,  DUTTA, Deepanshu ,  HAZEGHI, Arash

IPC分类号： G11C16/04

CPC分类号： G11C16/28 ,  G11C16/0483 ,  G11C16/3459

摘要： A method and non-volatile storage system are provided in which the voltage applied to the source end of a NAND string depends on the location of the non-volatile storage element that is selected for sensing. This may be done without body-biasing the NAND string. Having the magnitude of the voltage applied to the source end of a NAND string depend on the location of the selected memory cell (without any body biasing) helps to mitigate failures that are dependent on which word line is selected during a sensing operation of one embodiment. Additionally, the magnitude of a read pass voltage may depend on either the source line voltage or the location of the selected memory cell.

摘要翻译： 提供了一种方法和非易失性存储系统，其中施加到NAND串的源极的电压取决于被选择用于感测的非易失性存储元件的位置。 这可以在不对NAND串进行体偏置的情况下完成。 具有施加到NAND串的源极的电压的大小取决于所选择的存储器单元的位置（没有任何主体偏置）有助于减轻依赖于在一个实施例的感测操作期间选择哪个字线的故障 。 另外，读通道电压的幅度可以取决于源极线电压或所选择的存储器单元的位置。

公开(公告)号：EP2965319B1

公开(公告)日：2017-04-19

申请号：EP14712103.2

申请日：2014-03-03

申请人： SanDisk Technologies LLC

发明人： DUTTA, Deepanshu ,  LAI, Chun-Hung ,  LEE, Shih-Chung ,  OOWADA, Ken ,  HIGASHITANI, Masaaki

IPC分类号： G11C16/16 ,  G11C16/34

CPC分类号： G11C16/14 ,  G11C11/5628 ,  G11C11/5635 ,  G11C16/16 ,  G11C16/3427 ,  G11C16/3445 ,  G11C16/349

公开(公告)号：EP3257048A1

公开(公告)日：2017-12-20

申请号：EP15804662.3

申请日：2015-11-25

申请人： SanDisk Technologies LLC

发明人： LAI, Chun-Hung ,  LEE, Shih-Chung

IPC分类号： G11C16/34

CPC分类号： G11C16/3459 ,  G11C11/5642 ,  G11C11/5671 ,  G11C16/0475 ,  G11C16/0483 ,  G11C16/3413 ,  G11C16/3427 ,  G11C2211/5621

摘要： Reducing peak current and/or power consumption during verify of a non-volatile memory is disclosed. During a program verify, only memory cells in a first physical segment of the selected word line are verified during an initial program loop; memory cells in a different physical segment of the word line are locked out and not verified. The locked out memory cells may be slower to program. During a later program loop, memory cells in all physical segments are program verified. Locked out strings do not conduct a significant current during verify, thus reducing current/power consumption.