公开(公告)号：EP2342752A1

公开(公告)日：2011-07-13

申请号：EP09792789.1

申请日：2009-09-21

申请人： Sandisk 3D LLC

发明人： SCHRICKER, April, Dawn ,  SEKAR, Deepak, C. ,  FU, Andy ,  CLARK, Mark

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L45/1233 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/149 ,  H01L45/1683

摘要： Forming a metal-insulator diode and carbon memory element in a single damascene process is disclosed. A trench having a bottom and a sidewall is formed in an insulator. A first diode electrode is formed in the trench during a single damascene process. A first insulating region comprising a first insulating material is formed in the trench during the single damascene process. A second insulating region comprising a second insulating material is formed in the trench during the single damascene process. A second diode electrode is formed in the trench during the single damascene process. The first insulating region and the second insulating region reside between the first diode electrode and the second diode electrode to form a metal-insulator-insulator-metal (MIIM) diode. A region of carbon is formed in the trench during the single damascene process. At least a portion of the carbon is electrically in series with the MIIM diode.

公开(公告)号：EP2263252B1

公开(公告)日：2013-10-09

申请号：EP09730879.5

申请日：2009-04-10

申请人： SanDisk 3D LLC

发明人： SCHRICKER, April, D. ,  FU, Andy ,  KONEVECKI, Michael ,  MAXWELL, Steven

IPC分类号： H01L21/311 ,  H01L21/3213 ,  H01L27/10 ,  H01L27/24 ,  H01L45/00 ,  B82Y10/00 ,  B82Y40/00

CPC分类号： H01L21/31138 ,  B82Y10/00 ,  B82Y40/00 ,  G11C13/025 ,  H01L21/32136 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1675

摘要： Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube ("CNT") film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.

公开(公告)号：EP2263252A1

公开(公告)日：2010-12-22

申请号：EP09730879.5

申请日：2009-04-10

申请人： Sandisk 3d, Llc

发明人： SCHRICKER, April, D. ,  FU, Andy ,  KONEVECKI, Michael ,  MAXWELL, Steven

IPC分类号： H01L21/311 ,  H01L21/3213

CPC分类号： H01L21/31138 ,  B82Y10/00 ,  B82Y40/00 ,  G11C13/025 ,  H01L21/32136 ,  H01L27/101 ,  H01L27/2409 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/1233 ,  H01L45/149 ,  H01L45/1675

摘要： Memory cells, and methods of forming such memory cells are provided that include a steering element coupled to a carbon-based reversible resistivity-switching material. In particular embodiments, methods in accordance with this invention etch a carbon nano-tube ("CNT") film formed over a substrate, the methods including coating the substrate with a masking layer, patterning the masking layer, and etching the CNT film through the patterned masking layer using a non-oxygen based chemistry. Other aspects are also described.

公开(公告)号：EP2342752B1

公开(公告)日：2015-01-07

申请号：EP09792789.1

申请日：2009-09-21

申请人： SanDisk 3D LLC

发明人： SCHRICKER, April, Dawn ,  SEKAR, Deepak, C. ,  FU, Andy ,  CLARK, Mark

IPC分类号： H01L27/24 ,  H01L45/00

CPC分类号： H01L45/1233 ,  H01L27/101 ,  H01L27/1021 ,  H01L27/2418 ,  H01L27/2481 ,  H01L45/04 ,  H01L45/06 ,  H01L45/122 ,  H01L45/144 ,  H01L45/149 ,  H01L45/1683